Chip package

ABSTRACT

A chip package may include a first polymer layer and a first semiconductor chip in the first polymer layer. The first semiconductor chip may include a first semiconductor device and a first semiconductor substrate supporting the first semiconductor device. The first semiconductor chip may also have a first contact pad coupled to the first semiconductor device. The first semiconductor chip may further include a first conductive interconnect on the first contact pad. The chip package may also include a second polymer layer on the first polymer layer and across an edge of the first semiconductor chip. The chip package may further include a first conductive layer in the second polymer layer and directly on a surface of the first conductive interconnect, and across the edge of the first semiconductor chip.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/181,176, filed on Jun. 13, 2016, which is a divisional of U.S. patentapplication Ser. No. 12/506,278, filed on Jul. 21, 2009, now U.S. Pat.No. 9,391,021, which is a continuation of U.S. patent application Ser.No. 11/836,816, filed on Aug. 10, 2007, now U.S. Pat. No. 7,569,422,which is claims priority to U.S. Provisional Patent Application No.60/822,085, filed on Aug. 11, 2006, which are herein incorporated byreference in their entireties.

BACKGROUND OF THE INVENTION Field of the Invention

The invention relates to a chip package, and, more specifically, to achip package.

Brief Description of the Related Art

In the recent years, the development of advanced technology is on thecutting edge. As a result, high-technology electronics manufacturingindustries launch more feature-packed and humanized electronic products.These new products that hit the showroom are lighter, thinner, andsmaller in design. In the manufacturing of these electronic products,the key component has to be the integrated circuit (IC) chip inside anyelectronic product.

The operability, performance, and life of an IC chip are greatlyaffected by its circuit design, wafer manufacturing, and chip packaging.For this present invention, the focus will be on a chip packagingtechnique. Since the features and speed of IC chips are increasingrapidly, the need for increasing the conductivity of the circuitry isnecessary so that the signal delay and attenuation of the dies to theexternal circuitry are reduced. A chip package that allows good thermaldissipation and protection of the IC chips with a small overalldimension of the package is also necessary for higher performance chips.These are the goals to be achieved in chip packaging.

There are a vast variety of existing chip package techniques formounting a die on a substrate. For a tape automated bonding (TAB)technique, traces on a tape help to fan out the routing. For a flip-chiptechnique, solder balls act as an interface for a die to electricallyconnect to an external circuit. For a wirebonding technique, bondedwires act as an interface for a die to electrically connect to anexternal circuit.

U.S. Pat. Nos. 6,673,698 and 6,800,941 and U.S. Pub. No. 2003/0122244,2003/0122246 and 2003/0122243 teach another technology for packaging achip comprising mounting a semiconductor chip, after being cut from asemiconductor wafer, on a substrate, and then forming a circuit over thechip and across the edge of the chip to the peripheral region outsidethe upper space over the chip.

SUMMARY OF THE INVENTION

It is the objective of the invention to provide a chip package forpackaging a fine-pitched chip due to a metal bump preformed on thefine-pitched chip.

It is the objective of the invention to provide a chip package with agood electrical performance.

In order to reach the above objectives, the present invention provides achip package comprising: a substrate; a glue material, such as epoxyresin or polyimide (PI), on the substrate; a semiconductor chip on theglue material, wherein the semiconductor chip comprises a metal bumphaving a thickness of between 10 and 30 μm; a polymer material, such asepoxy based material, benzocyclobutane (BCB) or polyimide, over thesubstrate and on the semiconductor chip, uncovering a top surface of themetal bump; a patterned circuit layer over the polymer material andconnected to the metal bump; and a tin-containing ball over thepatterned circuit layer and connected to the patterned circuit layer.

In order to reach the above objectives, a method for fabricating chippackage comprises the following steps: providing a semiconductor chipwith a metal bump; adhering the semiconductor chip to a substrate;forming a polymer material on the substrate, on the semiconductor chip,and on the metal bump; polishing the polymer material; forming apatterned circuit layer over the polymer material and connected to themetal bump; and forming a tin-containing ball over the patterned circuitlayer and connected to the patterned circuit layer.

To enable the objectives, technical contents, characteristics andaccomplishments of the present invention, the embodiments of the presentinvention are to be described in detail in cooperation with the attacheddrawings below.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A through 1B are cross-sectional views schematically showingvarious structures according to the present invention.

FIGS. 2A through 2I are cross-sectional views showing a metal bumpformed over a semiconductor substrate of a semiconductor wafer.

FIGS. 2A-a through 2A-g are cross-sectional views showing a process offorming a metal bump over a semiconductor wafer.

FIGS. 3A through 3G are cross-sectional views showing a metal bumpformed over a semiconductor substrate of a semiconductor wafer.

FIGS. 4A through 4E are cross-sectional views showing a metal bumpformed over a semiconductor substrate of a semiconductor wafer.

FIG. 5 is cross-sectional view showing a metal bump formed over asemiconductor substrate of a semiconductor wafer.

FIGS. 6A through 6Y are cross-sectional views showing a processaccording to one embodiment of the present invention.

FIGS. 7A through 7J are cross-sectional views showing a processaccording to one embodiment of the present invention.

FIGS. 8A through 8M are cross-sectional views showing a processaccording to one embodiment of the present invention.

FIGS. 9A through 9L are cross-sectional views showing a processaccording to one embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Referring to FIG. 1A, a semiconductor substrate or semiconductor blankwafer 2 may be a silicon substrate or silicon wafer, a GaAs substrate orGaAs wafer, or a SiGe substrate or SiGe wafer. Multiple semiconductordevices 4 are formed in or over the semiconductor substrate 2. Thesemiconductor device 4 may be a memory device, a logic device, a passivedevice, such as resistor, capacitor, inductor or filter, or an activedevice, such as p-channel MOS device, n-channel MOS device, CMOS(Complementary Metal Oxide Semiconductor), BJT (Bipolar JunctionTransistor) or BiCMOS (Bipolar CMOS) device.

A circuit structure 6, fine line metal trace structure, is formed overthe semiconductor substrate 2 and connect to the semiconductor device 4.The circuit structure 6 comprises multiple patterned metal layers 8having a thickness t1 of less than 3 μm (such as between 0.2 and 2 μm)and multiple metal plugs 10. For example, the patterned metal layers 8and the metal plugs 10 are principally made of copper, wherein thepatterned metal layer 8 is a copper layer having a thickness of lessthan 3 μm (such as between 0.2 and 2 μm). Alternatively, the patternedmetal layer 8 is principally made of aluminum or aluminum-alloy, and themetal plug 10 is principally made of tungsten, wherein the patternedmetal layer 8 is an aluminum-containing layer having a thickness of lessthan 3 μm (such as between 0.2 and 2 μm).

One of the patterned metal layers 8 may be formed by a damascene processincluding sputtering an adhesion/barrier layer, such as tantalum ortantalum nitride, on an insulating layer, composed of Low-K oxide andoxynitride, and in an opening in the insulating layer, then sputtering afirst copper layer on the adhesion/barrier layer, then electroplating asecond copper layer on the first copper layer, then removing the firstand second copper layers and the adhesion/barrier layer outside theopening in the insulating layer using a chemical mechanical polishing(CMP) process. Alternatively, one of the patterned metal layer 8 may beformed by a process including sputtering an aluminum-alloy layer,containing more than 90 wt % aluminum and less than 10 wt % copper, onan insulating layer, such as oxide, then patterning the aluminum-alloylayer using photolithography and etching processes.

Multiple dielectric layers 12 having a thickness t2 of less than 3micrometers, such as between 0.3 and 3 μm, are located over thesemiconductor substrate 2 and interposed respectively between theneighboring patterned metal layers 8, and the neighboring patternedmetal layers 8 are interconnected through the metal plugs 10 inside thedielectric layer 12. The dielectric layer 12 is commonly formed by achemical vapor deposition (CVD) process. The material of the dielectriclayer 12 may include silicon oxide, silicon oxynitride, TEOS(Tetraethoxysilane), a compound containing silicon, carbon, oxygen andhydrogen (such as Si_(w)C_(x)O_(y)H_(z)), silicon nitride (such asSi₃N₄), FSG (Fluorinated Silicate Glass), Black Diamond, SiLK, a poroussilicon oxide, a porous compound containing nitrogen, oxygen andsilicon, SOG (Spin-On Glass), BPSG (borophosphosilicate glass), apolyarylene ether, PBO (Polybenzoxazole), or a material having a lowdielectric constant (K) of between 1.5 and 3, for example.

A passivation layer 14 is formed over the circuit structure 6 and overthe dielectric layers 12. The passivation layer 14 can protect thesemiconductor devices 4 and the circuit structure 6 from being damagedby moisture and foreign ion contamination. In other words, mobile ions(such as sodium ion), transition metals (such as gold, silver andcopper) and impurities can be prevented from penetrating through thepassivation layer 14 to the semiconductor devices 4, such astransistors, polysilicon resistor elements and polysilicon-polysiliconcapacitor elements, and to the circuit structure 6.

The passivation layer 14 is commonly made of silicon oxide (such asSiO₂), silicon oxynitride, silicon nitride (such as Si₃N₄), or PSG(phosphosilicate glass). The passivation layer 14 commonly has athickness t3 of more than 0.3 μm, such as between 0.3 and 1.5 μm. In apreferred case, the silicon nitride layer in the passivation layer 14has a thickness of more than 0.3 μm. Ten methods for depositing thepassivation layer 14 are described as below.

In a first method, the passivation layer 14 is formed by depositing asilicon oxide layer with a thickness of between 0.2 and 1.2 μm using aCVD method and then depositing a silicon nitride layer with a thicknessof 0.2 and 1.2 μm on the silicon oxide layer using a CVD method.

In a second method, the passivation layer 14 is formed by depositing asilicon oxide layer with a thickness of between 0.2 and 1.2 μm using aCVD method, next depositing a silicon oxynitride layer with a thicknessof between 0.05 and 0.15 μm on the silicon oxide layer using a PlasmaEnhanced CVD (PECVD) method, and then depositing a silicon nitride layerwith a thickness of between 0.2 and 1.2 μm on the silicon oxynitridelayer using a CVD method.

In a third method, the passivation layer 14 is formed by depositing asilicon oxynitride layer with a thickness of between 0.05 and 0.15 μmusing a CVD method, next depositing a silicon oxide layer with athickness of between 0.2 and 1.2 μm on the silicon oxynitride layerusing a CVD method, and then depositing a silicon nitride layer with athickness of between 0.2 and 1.2 μm on the silicon oxide layer using aCVD method.

In a fourth method, the passivation layer 14 is formed by depositing afirst silicon oxide layer with a thickness of between 0.2 and 0.5 μmusing a CVD method, next depositing a second silicon oxide layer with athickness of between 0.5 and 1 μm on the first silicon oxide layer usinga spin-coating method, next depositing a third silicon oxide layer witha thickness of between 0.2 and 0.5 μm on the second silicon oxide layerusing a CVD method, and then depositing a silicon nitride layer with athickness of 0.2 and 1.2 μm on the third silicon oxide using a CVDmethod.

In a fifth method, the passivation layer 14 is formed by depositing asilicon oxide layer with a thickness of between 0.5 and 2 μm using aHigh Density Plasma CVD (HDP-CVD) method and then depositing a siliconnitride layer with a thickness of 0.2 and 1.2 μm on the silicon oxidelayer using a CVD method.

In a sixth method, the passivation layer 14 is formed by depositing anUndoped Silicate Glass (USG) layer with a thickness of between 0.2 and 3μm, next depositing an insulating layer of TEOS, PSG or BPSG(borophosphosilicate glass) with a thickness of between 0.5 and 3 μm onthe USG layer, and then depositing a silicon nitride layer with athickness of 0.2 and 1.2 μm on the insulating layer using a CVD method.

In a seventh method, the passivation layer 14 is formed by optionallydepositing a first silicon oxynitride layer with a thickness of between0.05 and 0.15 μm using a CVD method, next depositing a silicon oxidelayer with a thickness of between 0.2 and 1.2 μm on the first siliconoxynitride layer using a CVD method, next optionally depositing a secondsilicon oxynitride layer with a thickness of between 0.05 and 0.15 μm onthe silicon oxide layer using a CVD method, next depositing a siliconnitride layer with a thickness of between 0.2 and 1.2 μm on the secondsilicon oxynitride layer or on the silicon oxide using a CVD method,next optionally depositing a third silicon oxynitride layer with athickness of between 0.05 and 0.15 μm on the silicon nitride layer usinga CVD method, and then depositing a silicon oxide layer with a thicknessof between 0.2 and 1.2 μm on the third silicon oxynitride layer or onthe silicon nitride layer using a CVD method.

In a eighth method, the passivation layer 14 is formed by depositing afirst silicon oxide layer with a thickness of between 0.2 and 1.2 μmusing a CVD method, next depositing a second silicon oxide layer with athickness of between 0.5 and 1 μm on the first silicon oxide layer usinga spin-coating method, next depositing a third silicon oxide layer witha thickness of between 0.2 and 1.2 μm on the second silicon oxide layerusing a CVD method, next depositing a silicon nitride layer with athickness of between 0.2 and 1.2 μm on the third silicon oxide layerusing a CVD method, and then depositing a fourth silicon oxide layerwith a thickness of between 0.2 and 1.2 μm on the silicon nitride layerusing a CVD method.

In a ninth method, the passivation layer 14 is formed by depositing afirst silicon oxide layer with a thickness of between 0.5 and 2 μm usinga HDP-CVD method, next depositing a silicon nitride layer with athickness of between 0.2 and 1.2 μm on the first silicon oxide layerusing a CVD method, and then depositing a second silicon oxide layerwith a thickness of between 0.5 and 2 μm on the silicon nitride using aHDP-CVD method.

In a tenth method, the passivation layer 14 is formed by depositing afirst silicon nitride layer with a thickness of between 0.2 and 1.2 μmusing a CVD method, next depositing a silicon oxide layer with athickness of between 0.2 and 1.2 μm on the first silicon nitride layerusing a CVD method, and then depositing a second silicon nitride layerwith a thickness of between 0.2 and 1.2 μm on the silicon oxide layerusing a CVD method.

An opening 14 a in the passivation layer 14 exposes a pad 16 of thecircuit structure 6 used to input or output signals or to be connectedto a power source or a ground reference. The pad 16 may have a thicknesst4 of between 0.4 and 3 μm or between 0.2 and 2 μm. For example, the pad16 may be composed of a sputtered aluminum layer or a sputteredaluminum-copper-alloy layer with a thickness of between 0.2 and 2 μm.Alternatively, the pad 16 may include an electroplated copper layer witha thickness of between 0.2 and 2 μm, and a barrier layer, such astantalum or tantalum nitride, on a bottom surface and side walls of theelectroplated copper layer.

Therefore, the pad 16 can be an aluminum pad, principally made ofsputtered aluminum with a thickness of between 0.2 and 2 μm.Alternatively, the pad 16 can be a copper pad, principally made ofelectroplated copper with a thickness of between 0.2 and 2 μm.

The opening 14 a may have a transverse dimension d, from a top view, ofbetween 0.5 and 20 μm or between 20 and 200 μm. The shape of the opening14 a from a top view may be a circle, and the diameter of thecircle-shaped opening 14 a may be between 0.5 and 20 μm or between 20and 200 μm. Alternatively, the shape of the opening 14 a from a top viewmay be a square, and the width of the square-shaped opening 14 a may bebetween 0.5 and 20 μm or between 20 and 200 μm. Alternatively, the shapeof the opening 14 a from a top view may be a polygon, such as hexagon oroctagon, and the polygon-shaped opening 14 a may have a width of between0.5 and 20 μm or between 20 and 200 μm. Alternatively, the shape of theopening 14 a from a top view may be a rectangle, and therectangle-shaped opening 14 a may have a shorter width of between 0.5and 20 μm or between 20 and 200 μm. Further, there may be some of thesemiconductor devices 4 under the pad 16 exposed by the opening 14 a.Alternatively, there may be no active devices under the pad 16 exposedby the opening 14 a.

Referring to FIG. 1B, a metal cap 18 having a thickness of between 0.4and 5 μm can be optionally formed on the pad 16 exposed by the opening14 a in the passivation layer 14 to prevent the pad 16 from beingoxidized or contaminated. The material of the metal cap 18 may includealuminum, an aluminum-copper alloy, an Al—Si—Cu alloy or gold. Forexample, when the pad 16 is a copper pad, the metal cap 18 includingaluminum is used to protect the copper pad 16 from being oxidized. Themetal cap 18 may comprise a barrier layer having a thickness of between0.01 and 0.5 μm on the pad 16. The barrier layer may be made oftitanium, titanium nitride, titanium-tungsten alloy, tantalum, tantalumnitride, chromium or nickel.

For example, the metal cap 18 may include a tantalum-containing layer,such as tantalum layer or tantalum-nitride layer, having a thickness ofbetween 0.01 and 0.5 μm on the pad 16, principally made of electroplatedcopper, exposed by the opening 14 a, and an aluminum-containing layer,such as aluminum layer or aluminum-alloy layer, having a thickness ofbetween 0.4 and 3 μm on the tantalum-containing layer. Alternatively,the metal cap 18 may include a titanium-containing layer, such astitanium layer or titanium-tungsten-alloy layer, having a thickness ofbetween 0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm, onthe pad 16, principally made of electroplated copper, exposed by theopening 14 a, a sputtered gold layer having a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.2 μm, on thetitanium-containing layer, and an electroplated gold layer having athickness of between 1 and 5 μm on the sputtered gold layer.Alternatively, the metal cap 18 may be a gold layer having a thicknessof between 0.4 and 5 μm on the pad 16, principally made of electroplatedcopper, exposed by the opening 14 a. Alternatively, the metal cap 18 mayinclude a nickel layer having a thickness of between 0.3 and 2 μm on thepad 16, principally made of electroplated copper, exposed by the opening14 a, and a gold layer having a thickness of between 0.4 and 3 μm on thenickel layer.

The semiconductor substrate 2, the circuit structure 6, the dielectriclayer 12, the passivation layer 14 and the pad 16 are described in theabove paragraphs. Below, the scheme 20 between the semiconductorsubstrate 2 and the passivation layer 14 may be any one of thestructures shown in FIGS. 1A and 1B between the semiconductor substrate2 and the passivation layer 14; the scheme 20 represents the combinationof the semiconductor devices 4, the circuit structure 6 (including themetal layers 8 and the metal plugs 10) and the dielectric layers 12 inFIG. 1A and FIG. 1B.

Referring to FIG. 2A, a metal bump 22 having a thickness of between 5and 150 μm, and preferably of between 20 and 50 μm, can be form on thepad 16, such as aluminum pad or copper pad, exposed by the opening 14 ain the passivation layer 14 shown in FIG. 1A.

Referring to FIGS. 2B and 2C, a metal bump 22 having a thickness ofbetween 5 and 150 μm, and preferably of between 20 and 50 μm, can beformed on the metal cap 18 shown in FIG. 1B, wherein the metal cap 18 isformed on the pad 16, such as copper pad, exposed by the opening 14 a inthe passivation layer 14. In FIG. 2B, the metal bump 22 may cover theentire top surface of the metal cap 18 and a sidewall of the metal cap18. Alternatively, in FIG. 2C, the metal bump 22 may uncover aperipheral region of the top surface of the metal cap 18 close to anedge of the metal cap 18 and a sidewall of the metal cap 18.

A method for forming the metal bump 22 is described as below. Thefollowing method is an example to form the metal bump 22 on the pad 16shown in FIG. 2A. Alternatively, the following method can be applied toforming the metal bump 22 on the metal cap 18, as shown in FIGS. 2B and2C.

Referring to FIG. 2A-a, an adhesion/barrier layer 102 having a thicknessof between 0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm,can be sputtered on the passivation layer 14 and on the pad 16, such asaluminum pad or copper pad, exposed by opening 14 a. The material of theadhesion/barrier layer 102 may include titanium, a titanium-tungstenalloy, titanium nitride, chromium, tantalum nitride, or a composite ofthe abovementioned materials. Alternatively, the adhesion/barrier layer102 can be formed by an evaporation process.

For example, the adhesion/barrier layer 102 may be formed by sputteringa titanium layer with a thickness of between 0.01 and 0.7 μm, andpreferably of between 0.03 and 0.35 μm, on the passivation layer 14 andon the pad 16, principally made of aluminum, exposed by opening 14 a.Alternatively, the adhesion/barrier layer 102 may be formed bysputtering a titanium-tungsten-alloy layer with a thickness of between0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm, on thepassivation layer 14 and on the pad 16, principally made of aluminum,exposed by opening 14 a. Alternatively, the adhesion/barrier layer 102may be formed by sputtering a titanium-nitride layer with a thickness ofbetween 0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm, onthe passivation layer 14 and on the pad 16, principally made ofaluminum, exposed by opening 14 a. Alternatively, the adhesion/barrierlayer 102 may be formed by sputtering a chromium layer with a thicknessof between 0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm,on the passivation layer 14 and on the pad 16, principally made ofaluminum, exposed by opening 14 a. Alternatively, the adhesion/barrierlayer 102 may be formed by sputtering a tantalum-nitride layer with athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the passivation layer 14 and on the pad 16, principally madeof aluminum, exposed by opening 14 a.

Referring to FIG. 2A-b, a seed layer 104 having a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, can besputtered on the adhesion/barrier layer 102. Alternatively, the seedlayer 104 can be formed by a vapor deposition method, an electrolessplating method or a PVD (Physical Vapor Deposition) method. The seedlayer 104 is beneficial to electroplating a metal layer thereon. Thus,the material of the seed layer 104 varies with the material of theelectroplated metal layer formed on the seed layer 104. When a goldlayer is to be electroplated on the seed layer 104, gold is a preferablematerial to the seed layer 104. When a copper layer is to beelectroplated on the seed layer 104, copper is a preferable material tothe seed layer 104. When a silver layer is to be electroplated on theseed layer 104, silver is a preferable material to the seed layer 104.

For example, when the adhesion/barrier layer 102 is formed by sputteringa titanium layer with a thickness of between 0.01 and 0.7 μm, andpreferably of between 0.03 and 0.35 μm, the seed layer 104 can be formedby sputtering a gold layer with a thickness of between 0.03 and 1 μm,and preferably of between 0.05 and 0.5 μm, on the titanium layer. Whenthe adhesion/barrier layer 102 is formed by sputtering atitanium-tungsten-alloy layer with a thickness of between 0.01 and 0.7μm, and preferably of between 0.03 and 0.35 μm, the seed layer 104 canbe formed by sputtering a gold layer with a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-tungsten-alloy layer. When the adhesion/barrier layer 102 isformed by sputtering a titanium-nitride layer with a thickness ofbetween 0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm, theseed layer 104 can be formed by sputtering a gold layer with a thicknessof between 0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, onthe titanium-nitride layer. When the adhesion/barrier layer 102 isformed by sputtering a chromium layer with a thickness of between 0.01and 0.7 μm, and preferably of between 0.03 and 0.35 μm, the seed layer104 can be formed by sputtering a gold layer with a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thechromium layer. When the adhesion/barrier layer 102 is formed bysputtering a tantalum-nitride layer with a thickness of between 0.01 and0.7 μm, and preferably of between 0.03 and 0.35 μm, the seed layer 104can be formed by sputtering a gold layer with a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetantalum-nitride layer.

For example, when the adhesion/barrier layer 102 is formed by sputteringa titanium layer with a thickness of between 0.01 and 0.7 μm, andpreferably of between 0.03 and 0.35 μm, the seed layer 104 can be formedby sputtering a copper layer with a thickness of between 0.03 and 1 μm,and preferably of between 0.05 and 0.5 μm, on the titanium layer. Whenthe adhesion/barrier layer 102 is formed by sputtering atitanium-tungsten-alloy layer with a thickness of between 0.01 and 0.7μm, and preferably of between 0.03 and 0.35 μm, the seed layer 104 canbe formed by sputtering a copper layer with a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-tungsten-alloy layer. When the adhesion/barrier layer 102 isformed by sputtering a titanium-nitride layer with a thickness ofbetween 0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm, theseed layer 104 can be formed by sputtering a copper layer with athickness of between 0.03 and 1 μm, and preferably of between 0.05 and0.5 μm, on the titanium-nitride layer. When the adhesion/barrier layer102 is formed by sputtering a chromium layer with a thickness of between0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm, the seedlayer 104 can be formed by sputtering a copper layer with a thickness ofbetween 0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thechromium layer. When the adhesion/barrier layer 102 is formed bysputtering a tantalum-nitride layer with a thickness of between 0.01 and0.7 μm, and preferably of between 0.03 and 0.35 μm, the seed layer 104can be formed by sputtering a copper layer with a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetantalum-nitride layer.

For example, when the adhesion/barrier layer 102 is formed by sputteringa titanium layer with a thickness of between 0.01 and 0.7 μm, andpreferably of between 0.03 and 0.35 μm, the seed layer 104 can be formedby sputtering a silver layer with a thickness of between 0.03 and 1 μm,and preferably of between 0.05 and 0.5 μm, on the titanium layer. Whenthe adhesion/barrier layer 102 is formed by sputtering atitanium-tungsten-alloy layer with a thickness of between 0.01 and 0.7μm, and preferably of between 0.03 and 0.35 μm, the seed layer 104 canbe formed by sputtering a silver layer with a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-tungsten-alloy layer. When the adhesion/barrier layer 102 isformed by sputtering a titanium-nitride layer with a thickness ofbetween 0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm, theseed layer 104 can be formed by sputtering a silver layer with athickness of between 0.03 and 1 μm, and preferably of between 0.05 and0.5 μm, on the titanium-nitride layer. When the adhesion/barrier layer102 is formed by sputtering a chromium layer with a thickness of between0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm, the seedlayer 104 can be formed by sputtering a silver layer with a thickness ofbetween 0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thechromium layer. When the adhesion/barrier layer 102 is formed bysputtering a tantalum-nitride layer with a thickness of between 0.01 and0.7 μm, and preferably of between 0.03 and 0.35 μm, the seed layer 104can be formed by sputtering a silver layer with a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetantalum-nitride layer.

Referring to FIG. 2A-c, a photoresist layer 106, such as positive-typephotoresist layer, having a thickness of between 5 and 150 μm, andpreferably of between 20 and 50 μm, is spin-on coated on the seed layer104. Referring to FIG. 2A-d, the photoresist layer 106 is patterned withthe processes of exposure, development, etc., to form an opening 106 ain the photoresist layer 106 exposing the seed layer 104 over the pad16. A 1× stepper or 1× contact aligner can be used to expose thephotoresist layer 106 during the process of exposure.

For example, the photoresist layer 106 can be formed by spin-on coatinga positive-type photosensitive polymer layer having a thickness ofbetween 5 and 150 μm, and preferably of between 20 and 50 μm, on theseed layer 104, then exposing the photosensitive polymer layer using a1× stepper or 1× contact aligner with at least two of G-line having awavelength ranging from 434 to 438 nm, H-line having a wavelengthranging from 403 to 407 nm, and I-line having a wavelength ranging from363 to 367 nm, illuminating the photosensitive polymer layer, that is,G-line and H-line, G-line and Mine, H-line and I-line, or G-line, H-lineand I-line illuminate the photosensitive polymer layer, then developingthe exposed polymer layer, and then removing the residual polymericmaterial or other contaminants on the seed layer 104 with an O₂ plasmaor a plasma containing fluorine of below 200 PPM and oxygen, such thatthe photoresist layer 106 can be patterned with an opening 106 a in thephotoresist layer 106 exposing the seed layer 104 over the pad 16.

Referring to FIG. 2A-e, a metal layer 108 having a thickness of between5 and 150 μm, and preferably of between 20 and 50 μm, is electroplatedon the seed layer 104 exposed by the opening 106 a. The material of themetal layer 108 may include gold, copper, silver or nickel.

For example, the metal layer 108 may be formed by electroplating a goldlayer with a thickness of between 5 and 150 μm, and preferably ofbetween 20 and 50 μm, on the seed layer 104, made of gold, exposed bythe opening 106 a. Alternatively, the metal layer 108 may be formed byelectroplating a copper layer with a thickness of between 5 and 150 μm,and preferably of between 20 and 50 μm, on the seed layer 104, made ofcopper, exposed by the opening 106 a. Alternatively, the metal layer 108may be formed by electroplating a silver layer with a thickness ofbetween 5 and 150 μm, and preferably of between 20 and 50 μm, on theseed layer 104, made of silver, exposed by the opening 106 a.Alternatively, the metal layer 108 may be formed by electroplating acopper layer with a thickness of between 5 and 150 μm, and preferably ofbetween 20 and 50 μm, on the seed layer 104, made of copper, exposed bythe opening 106 a, and then electroplating a nickel layer with athickness of between 1 and 10 μm on the copper layer in the opening 106a, wherein the thickness of the copper layer plus the nickel layer isbetween 5 and 150 μm, and preferably of between 20 and 50 μm.Alternatively, the metal layer 108 may be formed by electroplating acopper layer with a thickness of between 5 and 150 μm, and preferably ofbetween 20 and 50 μm, on the seed layer 104, made of copper, exposed bythe opening 106 a, then electroplating a nickel layer with a thicknessof between 1 and 10 μm on the copper layer in the opening 106 a, andthen electroplating a gold layer with a thickness of between 1 and 10 μmon the nickel layer in the opening 106 a, wherein the thickness of thecopper layer, the nickel layer and the gold layer is between 5 and 150μm, and preferably of between 20 and 50 μm.

Referring to FIG. 2A-f, after the metal layer 108 is formed, most of thephotoresist layer 106 can be removed using an organic solution withamide. However, some residuals from the photoresist layer 106 couldremain on the metal layer 108 and on the seed layer 104. Thereafter, theresiduals can be removed from the metal layer 108 and from the seedlayer 104 with a plasma, such as O₂ plasma or plasma containing fluorineof below 200 PPM and oxygen.

Referring to FIG. 2A-g, the seed layer 104 and the adhesion/barrierlayer 102 not under the metal layer 108 are subsequently removed with adry etching method or a wet etching method. As to the wet etchingmethod, when the adhesion/barrier layer 102 is a titanium-tungsten-alloylayer, it can be etched with a solution containing hydrogen peroxide;when the adhesion/barrier layer 102 is a titanium layer, it can beetched with a solution containing hydrogen fluoride; when the seed layer104 is a gold layer, it can be etched with an iodine-containingsolution, such as solution containing potassium iodide; when the seedlayer 104 is a copper layer, it can be etched with a solution containingNH₄OH. As to the dry etching method, when the adhesion/barrier layer 102is a titanium layer or a titanium-tungsten-alloy layer, it can be etchedwith a chlorine-containing plasma etching process or with an RIEprocess; when the seed layer 104 is a gold layer, it can be removed withan ion milling process or with an Ar sputtering etching process.Generally, the dry etching method to etch the seed layer 104 and theadhesion/barrier layer 102 not under the metal layer 108 may include achemical plasma etching process, a sputtering etching process, such asargon sputter process, or a chemical vapor etching process.

Thereby, in the present invention, the metal bump 22 can be formed onthe pad 16 exposed by the opening 14 a. The metal bump 22 can be formedof the adhesion/barrier layer 102, the seed layer 104 on theadhesion/barrier layer 102 and the electroplated metal layer 108 on theseed layer 104. The material of metal bump 22 may comprise titanium,titanium-tungsten alloy, titanium nitride, chromium, tantalum nitride,gold, copper, silver or nickel. Based on the above teaching, the metalbump 22 may include the following fashions.

For example, the metal bump 22 may be formed of a titanium-containinglayer, such as titanium layer, titanium-tungsten-alloy layer ortitanium-nitride layer, having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the pad 16, principallymade of copper, typically called a copper pad, exposed by the opening 14a, a sputtered seed layer, made of gold, having a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-containing layer, and an electroplated gold layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer. Alternatively, the metal bump 22 may beformed of a titanium-containing layer, such as titanium layer,titanium-tungsten-alloy layer or titanium-nitride layer, having athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the pad 16, principally made of copper, typically called acopper pad, exposed by the opening 14 a, a sputtered seed layer, made ofcopper, having a thickness of between 0.03 and 1 μm, and preferably ofbetween 0.05 and 0.5 μm, on the titanium-containing layer, and anelectroplated copper layer having a thickness of between 5 and 150 μm,and preferably of between 20 and 50 μm, on the sputtered seed layer.Alternatively, the metal bump 22 may be formed of a titanium-containinglayer, such as titanium layer, titanium-tungsten-alloy layer ortitanium-nitride layer, having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the pad 16, principallymade of copper, typically called a copper pad, exposed by the opening 14a, a sputtered seed layer, made of silver, having a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-containing layer, and an electroplated silver layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer. Alternatively, the metal bump 22 may beformed of a titanium-containing layer, such as titanium layer,titanium-tungsten-alloy layer or titanium-nitride layer, having athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the pad 16, principally made of copper, typically called acopper pad, exposed by the opening 14 a, a sputtered seed layer, made ofcopper, having a thickness of between 0.03 and 1 μm, and preferably ofbetween 0.05 and 0.5 μm, on the titanium-containing layer, anelectroplated copper layer having a thickness of between 5 and 150 μm,and preferably of between 20 and 50 μm, on the sputtered seed layer, andan electroplated nickel layer having a thickness of between 1 and 10 μmon the electroplated copper layer, wherein the thickness of theelectroplated copper layer plus the electroplated nickel layer isbetween 5 and 150 μm, and preferably of between 20 and 50 μm.Alternatively, the metal bump 22 may be formed of a titanium-containinglayer, such as titanium layer, titanium-tungsten-alloy layer ortitanium-nitride layer, having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the pad 16, principallymade of copper, typically called a copper pad, exposed by the opening 14a, a sputtered seed layer, made of copper, having a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-containing layer, an electroplated copper layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer, an electroplated nickel layer having athickness of between 1 and 10 μm on the electroplated copper layer, andan electroplated gold layer having a thickness of between 1 and 10 μm onthe electroplated nickel layer, wherein the thickness of theelectroplated copper layer, the electroplated nickel layer and theelectroplated gold layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm.

For example, the metal bump 22 may be formed of a tantalum-nitride layerhaving a thickness of between 0.01 and 0.7 μm, and preferably of between0.03 and 0.35 μm, on the pad 16, principally made of copper, typicallycalled a copper pad, exposed by the opening 14 a, a sputtered seedlayer, made of copper, having a thickness of between 0.03 and 1 μm, andpreferably of between 0.05 and 0.5 μm, on the tantalum-nitride layer,and an electroplated copper layer having a thickness of between 5 and150 μm, and preferably of between 20 and 50 μm, on the sputtered seedlayer. Alternatively, the metal bump 22 may be formed of atantalum-nitride layer having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the pad 16, principallymade of copper, typically called a copper pad, exposed by the opening 14a, a sputtered seed layer, made of copper, having a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetantalum-nitride layer, an electroplated copper layer having a thicknessof between 5 and 150 μm, and preferably of between 20 and 50 μm, on thesputtered seed layer, and an electroplated nickel layer having athickness of between 1 and 10 μm on the electroplated copper layer,wherein the thickness of the electroplated copper layer plus theelectroplated nickel layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm. Alternatively, the metal bump 22 may be formed ofa tantalum-nitride layer having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the pad 16, principallymade of copper, typically called a copper pad, exposed by the opening 14a, a sputtered seed layer, made of copper, having a thickness of between0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetantalum-nitride layer, an electroplated copper layer having a thicknessof between 5 and 150 μm, and preferably of between 20 and 50 μm, on thesputtered seed layer, an electroplated nickel layer having a thicknessof between 1 and 10 μm on the electroplated copper layer, and anelectroplated gold layer having a thickness of between 1 and 10 μm onthe electroplated nickel layer, wherein the thickness of theelectroplated copper layer, the electroplated nickel layer and theelectroplated gold layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm.

For example, the metal bump 22 may be formed of a chromium layer havinga thickness of between 0.01 and 0.7 μm, and preferably of between 0.03and 0.35 μm, on the pad 16, principally made of copper, typically calleda copper pad, exposed by the opening 14 a, a sputtered seed layer, madeof copper, having a thickness of between 0.03 and 1 μm, and preferablyof between 0.05 and 0.5 μm, on the chromium layer, and an electroplatedcopper layer having a thickness of between 5 and 150 μm, and preferablyof between 20 and 50 μm, on the sputtered seed layer. Alternatively, themetal bump 22 may be formed of a chromium layer having a thickness ofbetween 0.01 and 0.7 μm, and preferably of between 0.03 and 0.35 μm, onthe pad 16, principally made of copper, typically called a copper pad,exposed by the opening 14 a, a sputtered seed layer, made of copper,having a thickness of between 0.03 and 1 μm, and preferably of between0.05 and 0.5 μm, on the chromium layer, an electroplated copper layerhaving a thickness of between 5 and 150 μm, and preferably of between 20and 50 μm, on the sputtered seed layer, and an electroplated nickellayer having a thickness of between 1 and 10 μm on the electroplatedcopper layer, wherein the thickness of the electroplated copper layerplus the electroplated nickel layer is between 5 and 150 μm, andpreferably of between 20 and 50 μm. Alternatively, the metal bump 22 maybe formed of a chromium layer having a thickness of between 0.01 and 0.7μm, and preferably of between 0.03 and 0.35 μm, on the pad 16,principally made of copper, typically called a copper pad, exposed bythe opening 14 a, a sputtered seed layer, made of copper, having athickness of between 0.03 and 1 μm, and preferably of between 0.05 and0.5 μm, on the chromium layer, an electroplated copper layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer, an electroplated nickel layer having athickness of between 1 and 10 μm on the electroplated copper layer, andan electroplated gold layer having a thickness of between 1 and 10 μm onthe electroplated nickel layer, wherein the thickness of theelectroplated copper layer, the electroplated nickel layer and theelectroplated gold layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm.

For example, the metal bump 22 may be formed of a titanium-containinglayer, such as titanium layer, titanium-tungsten-alloy layer ortitanium-nitride layer, having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the pad 16, principallymade of aluminum, typically called an aluminum pad, exposed by theopening 14 a, a sputtered seed layer, made of gold, having a thicknessof between 0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, onthe titanium-containing layer, and an electroplated gold layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer. Alternatively, the metal bump 22 may beformed of a titanium-containing layer, such as titanium layer,titanium-tungsten-alloy layer or titanium-nitride layer, having athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the pad 16, principally made of aluminum, typically calledan aluminum pad, exposed by the opening 14 a, a sputtered seed layer,made of copper, having a thickness of between 0.03 and 1 μm, andpreferably of between 0.05 and 0.5 μm, on the titanium-containing layer,and an electroplated copper layer having a thickness of between 5 and150 μm, and preferably of between 20 and 50 μm, on the sputtered seedlayer. Alternatively, the metal bump 22 may be formed of atitanium-containing layer, such as titanium layer,titanium-tungsten-alloy layer or titanium-nitride layer, having athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the pad 16, principally made of aluminum, typically calledan aluminum pad, exposed by the opening 14 a, a sputtered seed layer,made of silver, having a thickness of between 0.03 and 1 μm, andpreferably of between 0.05 and 0.5 μm, on the titanium-containing layer,and an electroplated silver layer having a thickness of between 5 and150 μm, and preferably of between 20 and 50 μm, on the sputtered seedlayer. Alternatively, the metal bump 22 may be formed of atitanium-containing layer, such as titanium layer,titanium-tungsten-alloy layer or titanium-nitride layer, having athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the pad 16, principally made of aluminum, typically calledan aluminum pad, exposed by the opening 14 a, a sputtered seed layer,made of copper, having a thickness of between 0.03 and 1 μm, andpreferably of between 0.05 and 0.5 μm, on the titanium-containing layer,an electroplated copper layer having a thickness of between 5 and 150μm, and preferably of between 20 and 50 μm, on the sputtered seed layer,and an electroplated nickel layer having a thickness of between 1 and 10μm on the electroplated copper layer, wherein the thickness of theelectroplated copper layer plus the electroplated nickel layer isbetween 5 and 150 μm, and preferably of between 20 and 50 μm.Alternatively, the metal bump 22 may be formed of a titanium-containinglayer, such as titanium layer, titanium-tungsten-alloy layer ortitanium-nitride layer, having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the pad 16, principallymade of aluminum, typically called an aluminum pad, exposed by theopening 14 a, a sputtered seed layer, made of copper, having a thicknessof between 0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, onthe titanium-containing layer, an electroplated copper layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer, an electroplated nickel layer having athickness of between 1 and 10 μm on the electroplated copper layer, andan electroplated gold layer having a thickness of between 1 and 10 μm onthe electroplated nickel layer, wherein the thickness of theelectroplated copper layer, the electroplated nickel layer and theelectroplated gold layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm.

For example, the metal bump 22 may be formed of a tantalum-nitride layerhaving a thickness of between 0.01 and 0.7 μm, and preferably of between0.03 and 0.35 μm, on the pad 16, principally made of aluminum, typicallycalled an aluminum pad, exposed by the opening 14 a, a sputtered seedlayer, made of copper, having a thickness of between 0.03 and 1 μm, andpreferably of between 0.05 and 0.5 μm, on the tantalum-nitride layer,and an electroplated copper layer having a thickness of between 5 and150 μm, and preferably of between 20 and 50 μm, on the sputtered seedlayer. Alternatively, the metal bump 22 may be formed of atantalum-nitride layer having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the pad 16, principallymade of aluminum, typically called an aluminum pad, exposed by theopening 14 a, a sputtered seed layer, made of copper, having a thicknessof between 0.03 and 1 μm, and preferably of between 0.05 and 0.5 μm, onthe tantalum-nitride layer, an electroplated copper layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer, and an electroplated nickel layerhaving a thickness of between 1 and 10 μm, and preferably of between 20and 50 μm, on the electroplated copper layer, wherein the thickness ofthe electroplated copper layer plus the electroplated nickel layer isbetween 5 and 150 μm, and preferably of between 20 and 50 μm.Alternatively, the metal bump 22 may be formed of a tantalum-nitridelayer having a thickness of between 0.01 and 0.7 μm, and preferably ofbetween 0.03 and 0.35 μm, on the pad 16, principally made of aluminum,typically called an aluminum pad, exposed by the opening 14 a, asputtered seed layer, made of copper, having a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetantalum-nitride layer, an electroplated copper layer having a thicknessof between 5 and 150 μm, and preferably of between 20 and 50 μm, on thesputtered seed layer, an electroplated nickel layer having a thicknessof between 1 and 10 μm on the electroplated copper layer, and anelectroplated gold layer having a thickness of between 1 and 10 μm onthe electroplated nickel layer, wherein the thickness of theelectroplated copper layer, the electroplated nickel layer and theelectroplated gold layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm.

For example, the metal bump 22 may be formed of a chromium layer havinga thickness of between 0.01 and 0.7 μm, and preferably of between 0.03and 0.35 μm, on the pad 16, principally made of aluminum, typicallycalled an aluminum pad, exposed by the opening 14 a, a sputtered seedlayer, made of copper, having a thickness of between 0.03 and 1 μm, andpreferably of between 0.05 and 0.5 μm, on the chromium layer, and anelectroplated copper layer having a thickness of between 5 and 150 μm,and preferably of between 20 and 50 μm, on the sputtered seed layer.Alternatively, the metal bump 22 may be formed of a chromium layerhaving a thickness of between 0.01 and 0.7 μm, and preferably of between0.03 and 0.35 μm, on the pad 16, principally made of aluminum, typicallycalled an aluminum pad, exposed by the opening 14 a, a sputtered seedlayer, made of copper, having a thickness of between 0.03 and 1 μm, andpreferably of between 0.05 and 0.5 μm, on the chromium layer, anelectroplated copper layer having a thickness of between 5 and 150 μm,and preferably of between 20 and 50 μm, on the sputtered seed layer, andan electroplated nickel layer having a thickness of between 1 and 10 μmon the electroplated copper layer, wherein the thickness of theelectroplated copper layer plus the electroplated nickel layer isbetween 5 and 150 μm, and preferably of between 20 and 50 μm.Alternatively, the metal bump 22 may be formed of a chromium layerhaving a thickness of between 0.01 and 0.7 μm, and preferably of between0.03 and 0.35 μm, on the pad 16, principally made of aluminum, typicallycalled an aluminum pad, exposed by the opening 14 a, a sputtered seedlayer, made of copper, having a thickness of between 0.03 and 1 μm, andpreferably of between 0.05 and 0.5 μm, on the chromium layer, anelectroplated copper layer having a thickness of between 5 and 150 μm,and preferably of between 20 and 50 μm, on the sputtered seed layer, anelectroplated nickel layer having a thickness of between 1 and 10 μm onthe electroplated copper layer, and an electroplated gold layer having athickness of between 1 and 10 μm on the electroplated nickel layer,wherein the thickness of the electroplated copper layer, theelectroplated nickel layer and the electroplated gold layer is between 5and 150 μm, and preferably of between 20 and 50 μm.

For example, the metal bump 22 may be formed of a titanium-containinglayer, such as titanium layer, titanium-tungsten-alloy layer ortitanium-nitride layer, having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the aluminum-containinglayer (such as aluminum or aluminum-alloy) of the metal cap 18 on thepad 16, principally made of copper, typically called a copper pad,exposed by the opening 14 a, a sputtered seed layer, made of gold,having a thickness of between 0.03 and 1 μm, and preferably of between0.05 and 0.5 μm, on the titanium-containing layer, and an electroplatedgold layer having a thickness of between 5 and 150 μm, and preferably ofbetween 20 and 50 μm, on the sputtered seed layer. Alternatively, themetal bump 22 may be formed of a titanium-containing layer, such astitanium layer, titanium-tungsten-alloy layer or titanium-nitride layer,having a thickness of between 0.01 and 0.7 μm, and preferably of between0.03 and 0.35 μm, on the aluminum-containing layer (such as aluminum oraluminum-alloy) of the metal cap 18 on the pad 16, principally made ofcopper, typically called a copper pad, exposed by the opening 14 a, asputtered seed layer, made of copper, having a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-containing layer, and an electroplated copper layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer. Alternatively, the metal bump 22 may beformed of a titanium-containing layer, such as titanium layer,titanium-tungsten-alloy layer or titanium-nitride layer, having athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the aluminum-containing layer (such as aluminum oraluminum-alloy) of the metal cap 18 on the pad 16, principally made ofcopper, typically called a copper pad, exposed by the opening 14 a, asputtered seed layer, made of silver, having a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-containing layer, and an electroplated silver layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer. Alternatively, the metal bump 22 may beformed of a titanium-containing layer, such as titanium layer,titanium-tungsten-alloy layer or titanium-nitride layer, having athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the aluminum-containing layer (such as aluminum oraluminum-alloy) of the metal cap 18 on the pad 16, principally made ofcopper, typically called a copper pad, exposed by the opening 14 a, asputtered seed layer, made of copper, having a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-containing layer, an electroplated copper layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer, and an electroplated nickel layerhaving a thickness of between 1 and 10 μm on the electroplated copperlayer, wherein the thickness of the electroplated copper layer plus theelectroplated nickel layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm. Alternatively, the metal bump 22 may be formed ofa titanium-containing layer, such as titanium layer,titanium-tungsten-alloy layer or titanium-nitride layer, having athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the aluminum-containing layer (such as aluminum oraluminum-alloy) of the metal cap 18 on the pad 16, principally made ofcopper, typically called a copper pad, exposed by the opening 14 a, asputtered seed layer, made of copper, having a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetitanium-containing layer, an electroplated copper layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer, an electroplated nickel layer having athickness of between 1 and 10 μm on the electroplated copper layer, andan electroplated gold layer having a thickness of between 1 and 10 μm onthe electroplated nickel layer, wherein the thickness of theelectroplated copper layer, the electroplated nickel layer and theelectroplated gold layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm.

For example, the metal bump 22 may be formed of a tantalum-nitride layerhaving a thickness of between 0.01 and 0.7 microns, and preferably ofbetween 0.03 and 0.35 microns, on the aluminum-containing layer (such asaluminum or aluminum-alloy) of the metal cap 18 on the pad 16,principally made of copper, typically called a copper pad, exposed bythe opening 14 a, a sputtered seed layer, made of copper, having athickness of between 0.03 and 1 microns, and preferably of between 0.05and 0.5 microns, on the tantalum-nitride layer, and an electroplatedcopper layer having a thickness of between 5 and 150 μm, and preferablyof between 20 and 50 μm, on the sputtered seed layer. Alternatively, themetal bump 22 may be formed of a tantalum-nitride layer having athickness of between 0.01 and 0.7 μm, and preferably of between 0.03 and0.35 μm, on the aluminum-containing layer (such as aluminum oraluminum-alloy) of the metal cap 18 on the pad 16, principally made ofcopper, typically called a copper pad, exposed by the opening 14 a, asputtered seed layer, made of copper, having a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on thetantalum-nitride layer, an electroplated copper layer having a thicknessof between 5 and 150 μm, and preferably of between 20 and 50 μm, on thesputtered seed layer, and an electroplated nickel layer having athickness of between 1 and 10 μm on the electroplated copper layer,wherein the thickness of the electroplated copper layer plus theelectroplated nickel layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm. Alternatively, the metal bump 22 may be formed ofa tantalum-nitride layer having a thickness of between 0.01 and 0.7 μm,and preferably of between 0.03 and 0.35 μm, on the aluminum-containinglayer (such as aluminum or aluminum-alloy) of the metal cap 18 on thepad 16, principally made of copper, typically called a copper pad,exposed by the opening 14 a, a sputtered seed layer, made of copper,having a thickness of between 0.03 and 1 μm, and preferably of between0.05 and 0.5 μm, on the tantalum-nitride layer, an electroplated copperlayer having a thickness of between 5 and 150 μm, and preferably ofbetween 20 and 50 μm, on the sputtered seed layer, an electroplatednickel layer having a thickness of between 1 and 10 μm on theelectroplated copper layer, and an electroplated gold layer having athickness of between 1 and 10 μm on the electroplated nickel layer,wherein the thickness of the electroplated copper layer, theelectroplated nickel layer and the electroplated gold layer is between 5and 150 μm, and preferably of between 20 and 50 μm.

For example, the metal bump 22 may be formed of a chromium layer havinga thickness of between 0.01 and 0.7 μm, and preferably of between 0.03and 0.35 μm, on the aluminum-containing layer (such as aluminum oraluminum-alloy) of the metal cap 18 on the pad 16, principally made ofcopper, typically called a copper pad, exposed by the opening 14 a, asputtered seed layer, made of copper, having a thickness of between 0.03and 1 μm, and preferably of between 0.05 and 0.5 μm, on the chromiumlayer, and an electroplated copper layer having a thickness of between 5and 150 μm, and preferably of between 20 and 50 μm, on the sputteredseed layer. Alternatively, the metal bump 22 may be formed of a chromiumlayer having a thickness of between 0.01 and 0.7 μm, and preferably ofbetween 0.03 and 0.35 μm, on the aluminum-containing layer (such asaluminum or aluminum-alloy) of the metal cap 18 on the pad 16,principally made of copper, typically called a copper pad, exposed bythe opening 14 a, a sputtered seed layer, made of copper, having athickness of between 0.03 and 1 μm, and preferably of between 0.05 and0.5 μm, on the chromium layer, an electroplated copper layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer, and an electroplated nickel layerhaving a thickness of between 1 and 10 μm on the electroplated copperlayer, wherein the thickness of the electroplated copper layer plus theelectroplated nickel layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm. Alternatively, the metal bump 22 may be formed ofa chromium layer having a thickness of between 0.01 and 0.7 μm, andpreferably of between 0.03 and 0.35 μm, on the aluminum-containing layer(such as aluminum or aluminum-alloy) of the metal cap 18 on the pad 16,principally made of copper, typically called a copper pad, exposed bythe opening 14 a, a sputtered seed layer, made of copper, having athickness of between 0.03 and 1 μm, and preferably of between 0.05 and0.5 μm, on the chromium layer, an electroplated copper layer having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, on the sputtered seed layer, an electroplated nickel layer having athickness of between 1 and 10 μm on the electroplated copper layer, andan electroplated gold layer having a thickness of between 1 and 10 μm onthe electroplated nickel layer, wherein the thickness of theelectroplated copper layer, the electroplated nickel layer and theelectroplated gold layer is between 5 and 150 μm, and preferably ofbetween 20 and 50 μm.

Referring to FIG. 2D, a metal trace 24 can be formed on the passivationlayer 14 and connected to the pad 16, such as aluminum pad or copperpad, through the opening 14 a. The material of the metal trace 24 mayinclude copper, nickel or gold. For example, the metal trace 24 maycomprise a gold layer with a thickness of between 2 and 15 μm on thepassivation layer 14 and on the pad 16, such as aluminum pad or copperpad, exposed by the opening 14 a. Alternatively, the metal trace 24 maycomprise a copper layer with a thickness of between 2 and 15 μm on thepassivation layer 14 and on the pad 16, such as aluminum pad or copperpad, exposed by the opening 14 a. Alternatively, the metal trace 24 maycomprise a copper layer having a thickness of between 1 and 20 μm on thepassivation layer 14 and on the pad 16, such as aluminum pad or copperpad, exposed by the opening 14 a, a nickel layer having a thickness ofbetween 0.5 and 5 μm directly on the copper layer, and a gold layerhaving a thickness of between 0.01 and 5 μm directly on the nickellayer.

Next, referring to FIG. 2E, the metal bump 22 having a thickness ofbetween 5 and 150 μm, and preferably of between 20 and 50 μm, is formedon the metal trace 24. From a top perspective view, the position of themetal bump 22 may be different from that of the pad 16, to which themetal trace 24 is connected. In this embodiment, the above-mentionedadhesion/barrier layer 102 and seed layer 104 of the metal bump 22 shownin FIG. 2A-g may be saved when the metal bump 22 shown in FIG. 2E isformed on the metal trace 24; that is, the above-mentioned electroplatedmetal layer 108 of the metal bump 22 shown in FIG. 2A-g may be formeddirectly on the metal trace 24 when the metal bump 22 shown in FIG. 2Eis formed on the metal trace 24. In a case, the metal trace 24 and metalbump 22, as shown in FIG. 2E, may be formed by sputtering atitanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on the pad16, principally made of sputtered aluminum or electroplated copper, andon the passivation layer 14, then sputtering a seed layer, such as gold,having a thickness of between 0.03 and 1 microns, and preferably ofbetween 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a first photoresist layer on the seed layer, an opening in thefirst photoresist layer with a trace pattern exposing the seed layer,then electroplating a first gold layer, for the metal trace 24, having athickness of between 1 and 20 microns, and preferably of between 2 and15 microns, on the seed layer exposed by the opening in the firstphotoresist layer, then forming a second photoresist layer on the firstgold layer and on the first photoresist layer, an opening in the secondphotoresist layer with a bump pattern exposing the first gold layer,then electroplating a second gold layer, for the metal bump 22, having athickness of between 5 and 150 microns, and preferably of between 20 and50 microns, on the first gold layer exposed by the opening in the secondphotoresist layer, then removing the second and first photoresistlayers, then removing the seed layer not under the first gold layer, andthen removing the adhesion/barrier layer not under the first gold layer.

Alternatively, the metal trace 24 and metal bump 22 shown in FIG. 2E maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the pad 16, principally made of sputtered aluminum or electroplatedcopper, and on the passivation layer 14, then sputtering a seed layer,such as copper, having a thickness of between 0.03 and 1 microns, andpreferably of between 0.05 and 0.5 microns, on the adhesion/barrierlayer, then forming a first photoresist layer on the seed layer, anopening in the first photoresist layer with a trace pattern exposing theseed layer, then electroplating a first copper layer, for the metaltrace 24, having a thickness of between 1 and 20 microns, and preferablyof between 2 and 15 microns, on the seed layer exposed by the opening inthe first photoresist layer, then forming a second photoresist layer onthe first copper layer and on the first photoresist layer, an opening inthe second photoresist layer with a bump pattern exposing the firstcopper layer, then electroplating a second copper layer, for the metalbump 22, having a thickness of between 5 and 150 microns, and preferablyof between 20 and 50 microns, on the first copper layer exposed by theopening in the second photoresist layer, then removing the second andfirst photoresist layers, then removing the seed layer not under thefirst copper layer, and then removing the adhesion/barrier layer notunder the first copper layer.

Alternatively, the metal trace 24 and metal bump 22 shown in FIG. 2E maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the pad 16, principally made of sputtered aluminum or electroplatedcopper, and on the passivation layer 14, then sputtering a seed layer,such as copper, having a thickness of between 0.03 and 1 microns, andpreferably of between 0.05 and 0.5 microns, on the adhesion/barrierlayer, then forming a first photoresist layer on the seed layer, anopening in the first photoresist layer with a trace pattern exposing theseed layer, then electroplating a first copper layer, for the metaltrace 24, having a thickness of between 1 and 20 microns, and preferablyof between 2 and 15 microns, on the seed layer exposed by the opening inthe first photoresist layer, then forming a second photoresist layer onthe first copper layer and on the first photoresist layer, an opening inthe second photoresist layer with a bump pattern exposing the firstcopper layer, then electroplating a second copper layer, for the metalbump 22, having a thickness of between 5 and 150 microns, and preferablyof between 20 and 50 microns, on the first copper layer exposed by theopening in the second photoresist layer, then electroplating a nickellayer, for the metal bump 22, having a thickness of between 1 and 10microns, on the second copper layer in the opening in the secondphotoresist layer, then removing the second and first photoresistlayers, then removing the seed layer not under the first copper layer,and then removing the adhesion/barrier layer not under the first copperlayer.

Alternatively, the metal trace 24 and metal bump 22 shown in FIG. 2E maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the pad 16, principally made of sputtered aluminum or electroplatedcopper, and on the passivation layer 14, then sputtering a seed layer,such as copper, having a thickness of between 0.03 and 1 microns, andpreferably of between 0.05 and 0.5 microns, on the adhesion/barrierlayer, then forming a first photoresist layer on the seed layer, anopening in the first photoresist layer with a trace pattern exposing theseed layer, then electroplating a first copper layer, for the metaltrace 24, having a thickness of between 1 and 20 microns, and preferablyof between 2 and 15 microns, on the seed layer exposed by the opening inthe first photoresist layer, then forming a second photoresist layer onthe first copper layer and on the first photoresist layer, an opening inthe second photoresist layer with a bump pattern exposing the firstcopper layer, then electroplating a second copper layer, for the metalbump 22, having a thickness of between 5 and 150 microns, and preferablyof between 20 and 50 microns, on the first copper layer exposed by theopening in the second photoresist layer, then electroplating a nickellayer, for the metal bump 22, having a thickness of between 1 and 10microns, on the second copper layer in the opening in the secondphotoresist layer, then electroplating a gold layer, for the metal bump22, having a thickness of between 1 and 10 microns, on the nickel layerin the opening in the second photoresist layer, then removing the secondand first photoresist layers, then removing the seed layer not under thefirst copper layer, and then removing the adhesion/barrier layer notunder the first copper layer.

Thereby, referring to FIG. 2E, the metal bump 22 may include anelectroplated gold layer having a thickness of between 5 and 150 μm, andpreferably of between 20 and 50 μm, directly on a gold layer of themetal trace 24. Alternatively, the metal bump 22 may be formed of anelectroplated copper layer having a thickness of between 5 and 150 μm,and preferably of between 20 and 50 μm, directly on a copper layer ofthe metal trace 24. Alternatively, after the metal trace 24 and themetal bump 22 are formed, a polymer layer, such as a photosensitivepolyimide layer having a thickness of between 5 and 30 μm, can bespin-on coated on the metal trace 24, on the metal bump 22 and on thepassivation layer 14, next the polymer layer is exposed using 1× stepperwith at least two of G-line having a wavelength ranging from 434 to 438nm, H-line having a wavelength ranging from 403 to 407 nm, and I-linehaving a wavelength ranging from 363 to 367 nm, illuminating the bakedpolyimide layer, that is, G-line and H-line, G-line and I-line, H-lineand I-line, or G-line, H-line and I-line illuminate the baked polyimidelayer, next the exposed polymer is developed to uncover the metal bump22, next the polymer layer is cured at a peak temperature of between 250and 400° C. for a time of between 30 and 200 minutes, or at atemperature of more than 400° C. for a time of less than 30 minutes, ina nitrogen ambient or in an oxygen-free ambient, wherein the curedpolymer layer, such as polyimide, may have a thickness of between 3 and25 microns, and next the residual polymeric material or othercontaminants on the metal bump 22 with an O₂ plasma or a plasmacontaining fluorine of below 200 PPM and oxygen. Alternatively, apolymer layer, such as benzocyclobutane (BCB), may be formed to coverthe metal trace 24 and the passivation layer 14, but to uncover themetal bump 22.

Alternatively, referring to FIG. 2F, a metal trace 24 may be formed bysputtering a titanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on the pad16, principally made of sputtered aluminum or electroplated copper,exposed by the opening 14 a, and on the passivation layer 14, thensputtering a seed layer, such as gold, having a thickness of between0.03 and 1 microns, and preferably of between 0.05 and 0.5 microns, onthe adhesion/barrier layer, then forming a photoresist layer on the seedlayer, an opening in the photoresist layer with a trace pattern exposingthe seed layer, then electroplating a gold layer having a thickness ofbetween 1 and 20 microns, and preferably of between 2 and 15 microns, onthe seed layer exposed by the opening in the photoresist layer, thenremoving the photoresist layers, then removing the seed layer not underthe electroplated gold layer, and then removing the adhesion/barrierlayer not under the electroplated gold layer. Alternatively, the metaltrace 24 may be formed by sputtering a titanium-containing layer, suchas titanium layer or titanium-tungsten-alloy layer, having a thicknessof between 0.01 and 0.7 microns, and preferably of between 0.03 and 0.35microns, on the pad 16, principally made of sputtered aluminum orelectroplated copper, exposed by the opening 14 a, and on thepassivation layer 14, then sputtering a seed layer, such as copper,having a thickness of between 0.03 and 1 microns, and preferably ofbetween 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a photoresist layer on the seed layer, an opening in thephotoresist layer with a trace pattern exposing the seed layer, thenelectroplating a copper layer having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the photoresist layer, then removing thephotoresist layers, then removing the seed layer not under theelectroplated copper layer, and then removing the adhesion/barrier layernot under the electroplated copper layer. Alternatively, the metal trace24 may be formed by sputtering a titanium-containing layer, such astitanium layer or titanium-tungsten-alloy layer, having a thickness ofbetween 0.01 and 0.7 microns, and preferably of between 0.03 and 0.35microns, on the pad 16, principally made of sputtered aluminum orelectroplated copper, exposed by the opening 14 a, and on thepassivation layer 14, then sputtering a seed layer, such as copper,having a thickness of between 0.03 and 1 microns, and preferably ofbetween 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a photoresist layer on the seed layer, an opening in thephotoresist layer with a trace pattern exposing the seed layer, thenelectroplating a copper layer having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the photoresist layer, then electroplating anickel layer having a thickness of between 1 and 10 microns on theelectroplated copper layer in the opening in the photoresist layer, thenremoving the photoresist layers, then removing the seed layer not underthe electroplated copper layer, and then removing the adhesion/barrierlayer not under the electroplated copper layer. Alternatively, the metaltrace 24 may be formed by sputtering a titanium-containing layer, suchas titanium layer or titanium-tungsten-alloy layer, having a thicknessof between 0.01 and 0.7 microns, and preferably of between 0.03 and 0.35microns, on the pad 16, principally made of sputtered aluminum orelectroplated copper, exposed by the opening 14 a, and on thepassivation layer 14, then sputtering a seed layer, such as copper,having a thickness of between 0.03 and 1 microns, and preferably ofbetween 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a photoresist layer on the seed layer, an opening in thephotoresist layer with a trace pattern exposing the seed layer, thenelectroplating a copper layer having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the photoresist layer, then electroplating anickel layer having a thickness of between 1 and 10 microns on theelectroplated copper layer in the opening in the photoresist layer, thenelectroplating a gold layer having a thickness of between 0.01 and 3microns on the electroplated nickel layer in the opening in thephotoresist layer, then removing the photoresist layers, then removingthe seed layer not under the electroplated copper layer, and thenremoving the adhesion/barrier layer not under the electroplated copperlayer.

Referring to FIG. 2F, after the metal trace 24 is formed, a polymerlayer 26 can be formed on the metal trace 24 and on the passivationlayer 14, an opening 26 a in the polymer layer 26 exposing a pad of themetal trace 24. From a top perspective view, the position of the padexposed by the opening 26 a may be different from that of the pad 16 towhich the metal trace 24 is connected. The polymer layer 26 can beformed by spin-on coating a positive-type photosensitive polyimide layerhaving a thickness of between 3 and 50 μm, and preferably of between 6and 24 μm, on the passivation layer 14 and on the metal trace 24, thenbaking the spin-on coated polyimide layer, then exposing the bakedpolyimide layer using a 1× stepper or 1× contact aligner with at leasttwo of G-line having a wavelength ranging from 434 to 438 nm, H-linehaving a wavelength ranging from 403 to 407 nm, and I-line having awavelength ranging from 363 to 367 nm, illuminating the baked polyimidelayer, that is, G-line and H-line, G-line and Mine, H-line and I-line,or G-line, H-line and I-line illuminate the baked polyimide layer, thendeveloping the exposed polyimide layer, an opening in the developedpolyimide layer exposing the pad of the metal trace 24, then curing orheating the developed polyimide layer at a peak temperature of between250 and 400° C. for a time of between 30 and 200 minutes, or at atemperature of more than 400° C. for a time of less than 30 minutes, ina nitrogen ambient or in an oxygen-free ambient, the cured polyimidelayer having a thickness of between 3 and 26 μm, and preferably between3 and 15 μm, and then removing the residual polymeric material or othercontaminants on the pad of the metal trace 24 exposed by the opening inthe cured polyimide layer with an O₂ plasma or a plasma containingfluorine of below 200 PPM and oxygen, such that the polyimide layer canbe patterned with at least one opening 26 a in the polyimide layerexposing at least one pad of the metal trace 24. Next, the metal bump 22having a thickness of between 5 and 150 μm, and preferably of between 20and 50 μm, is formed on the metal trace 24 exposed by the opening 26 a.The method for forming the metal bump 22 on the pad exposed by theopening 26 a can be referred to the above description, as illustrated inFIGS. 2A-a through 2A-g, of forming the metal bump 22 on the pad 16exposed by the opening 14 a. The metal bump 22 shown in FIG. 2F can beformed by sputtering the adhesion/barrier layer 102 on the pad exposedby the opening 26 a and on the polymer layer 26, followed by the stepsshown in FIGS. 2A-b through 2A-g.

Alternatively, the material of the polymer layer 26 may includebenzocyclobutane (BCB), polyurethane, epoxy resin, a parylene-basedpolymer, a solder-mask material, an elastomer, or a porous dielectricmaterial. The polymer layer 26 has a thickness of between 3 and 25 μm.For example, the polymer layer 26 may be a benzocyclobutane (BCB) layerhaving a thickness of between 3 and 25 μm on the passivation layer 14and on the metal trace 24. Alternatively, the polymer layer 26 may be anepoxy resin layer having a thickness of between 3 and 25 μm on thepassivation layer 14 and on the metal trace 24. The polymer layer 26 canbe formed by a spin-on coating process, a lamination process or ascreen-printing process.

Referring to FIG. 2G, the metal trace 24 can be formed on thepassivation layer 14 and on the aluminum-containing layer of the metalcap 18 on the pad 16, principally made of copper, exposed by the opening14 a. The material of the metal trace 24 may include copper, nickel orgold. For example, the metal trace 24 may comprise a gold layer with athickness of between 2 and 15 μm on the passivation layer 14 and on thealuminum-containing layer of the metal cap 18 on the pad 16, principallymade of copper, exposed by the opening 14 a. Alternatively, the metaltrace 24 may comprise a copper layer with a thickness of between 2 and15 μm on the passivation layer 14 and on the aluminum-containing layerof the metal cap 18 on the pad 16, principally made of copper, exposedby the opening 14 a. Alternatively, the metal trace 24 may comprise acopper layer having a thickness of between 1 and 20 μm on thepassivation layer 14 and on the aluminum-containing layer of the metalcap 18 on the pad 16, principally made of copper, exposed by the opening14 a, a nickel layer having a thickness of between 0.5 and 5 μm directlyon the copper layer, and a gold layer having a thickness of between 0.01and 5 μm directly on the nickel layer.

Next, referring to FIG. 2H, the metal bump 22 having a thickness ofbetween 5 and 150 μm, and preferably of between 20 and 50 μm, is formedon the metal trace 24. From a top perspective view, the position of themetal bump 22 may be different from that of the metal cap 18 to whichthe metal trace 24 is connected. In this embodiment, the above-mentionedadhesion/barrier layer 102 and seed layer 104 of the metal bump 22 shownin FIG. 2A-g may be saved when the metal bump 22 shown in FIG. 2H isformed on the metal trace 24; that is, the above-mentioned electroplatedmetal layer 108 of the metal bump 22 shown in FIG. 2A-g may be formeddirectly on the metal trace 24 when the metal bump 22 shown in FIG. 2His formed on the metal trace 24. In a case, the metal trace 24 and metalbump 22, shown in FIG. 2H, may be formed by sputtering atitanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on thealuminum-containing layer of the metal cap 18 on the pad 16, principallymade of electroplated copper, exposed by the opening 14 a, and on thepassivation layer 14, then sputtering a seed layer, such as gold, havinga thickness of between 0.03 and 1 microns, and preferably of between0.05 and 0.5 microns, on the adhesion/barrier layer, then forming afirst photoresist layer on the seed layer, an opening in the firstphotoresist layer with a trace pattern exposing the seed layer, thenelectroplating a first gold layer, for the metal trace 24, having athickness of between 1 and 20 microns, and preferably of between 2 and15 microns, on the seed layer exposed by the opening in the firstphotoresist layer, then forming a second photoresist layer on the firstgold layer and on the first photoresist layer, an opening in the secondphotoresist layer with a bump pattern exposing the first gold layer,then electroplating a second gold layer, for the metal bump 22, having athickness of between 5 and 150 microns, and preferably of between 20 and50 microns, on the first gold layer exposed by the opening in the secondphotoresist layer, then removing the second and first photoresistlayers, then removing the seed layer not under the first gold layer, andthen removing the adhesion/barrier layer not under the first gold layer.

Alternatively, the metal trace 24 and metal bump 22 shown in FIG. 2H maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the aluminum-containing layer of the metal cap 18 on the pad 16,principally made of electroplated copper, exposed by the opening 14 a,and on the passivation layer 14, then sputtering a seed layer, such ascopper, having a thickness of between 0.03 and 1 microns, and preferablyof between 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a first photoresist layer on the seed layer, an opening in thefirst photoresist layer with a trace pattern exposing the seed layer,then electroplating a first copper layer, for the metal trace 24, havinga thickness of between 1 and 20 microns, and preferably of between 2 and15 microns, on the seed layer exposed by the opening in the firstphotoresist layer, then forming a second photoresist layer on the firstcopper layer and on the first photoresist layer, an opening in thesecond photoresist layer with a bump pattern exposing the first copperlayer, then electroplating a second copper layer, for the metal bump 22,having a thickness of between 5 and 150 microns, and preferably ofbetween 20 and 50 microns, on the first copper layer exposed by theopening in the second photoresist layer, then removing the second andfirst photoresist layers, then removing the seed layer not under thefirst copper layer, and then removing the adhesion/barrier layer notunder the first copper layer.

Alternatively, the metal trace 24 and metal bump 22 shown in FIG. 2H maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the aluminum-containing layer of the metal cap 18 on the pad 16,principally made of electroplated copper, exposed by the opening 14 a,and on the passivation layer 14, then sputtering a seed layer, such ascopper, having a thickness of between 0.03 and 1 microns, and preferablyof between 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a first photoresist layer on the seed layer, an opening in thefirst photoresist layer with a trace pattern exposing the seed layer,then electroplating a first copper layer, for the metal trace 24, havinga thickness of between 1 and 20 microns, and preferably of between 2 and15 microns, on the seed layer exposed by the opening in the firstphotoresist layer, then forming a second photoresist layer on the firstcopper layer and on the first photoresist layer, an opening in thesecond photoresist layer with a bump pattern exposing the first copperlayer, then electroplating a second copper layer, for the metal bump 22,having a thickness of between 5 and 150 microns, and preferably ofbetween 20 and 50 microns, on the first copper layer exposed by theopening in the second photoresist layer, then electroplating a nickellayer, for the metal bump 22, having a thickness of between 1 and 10microns, on the second copper layer in the opening in the secondphotoresist layer, then removing the second and first photoresistlayers, then removing the seed layer not under the first copper layer,and then removing the adhesion/barrier layer not under the first copperlayer.

Alternatively, the metal trace 24 and metal bump 22 shown in FIG. 2H maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the aluminum-containing layer of the metal cap 18 on the pad 16,principally made of electroplated copper, exposed by the opening 14 a,and on the passivation layer 14, then sputtering a seed layer, such ascopper, having a thickness of between 0.03 and 1 microns, and preferablyof between 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a first photoresist layer on the seed layer, an opening in thefirst photoresist layer with a trace pattern exposing the seed layer,then electroplating a first copper layer, for the metal trace 24, havinga thickness of between 1 and 20 microns, and preferably of between 2 and15 microns, on the seed layer exposed by the opening in the firstphotoresist layer, then forming a second photoresist layer on the firstcopper layer and on the first photoresist layer, an opening in thesecond photoresist layer with a bump pattern exposing the first copperlayer, then electroplating a second copper layer, for the metal bump 22,having a thickness of between 5 and 150 microns, and preferably ofbetween 20 and 50 microns, on the first copper layer exposed by theopening in the second photoresist layer, then electroplating a nickellayer, for the metal bump 22, having a thickness of between 1 and 10microns, on the second copper layer in the opening in the secondphotoresist layer, then electroplating a gold layer, for the metal bump22, having a thickness of between 1 and 10 microns, on the nickel layerin the opening in the second photoresist layer, then removing the secondand first photoresist layers, then removing the seed layer not under thefirst copper layer, and then removing the adhesion/barrier layer notunder the first copper layer.

Thereby, referring to FIG. 2H, the metal bump 22 may include anelectroplated gold layer having a thickness of between 5 and 150 μm, andpreferably of between 20 and 50 μm, on a gold layer of the metal trace24. Alternatively, the metal bump 22 may be formed of an electroplatedcopper layer having a thickness of between 5 and 150 μm, and preferablyof between 20 and 50 μm, on a copper layer of the metal trace 24.Alternatively, after the metal trace 24 and the metal bump 22 areformed, a polymer layer, such as a photosensitive polyimide layer havinga thickness of between 5 and 30 μm, can be spin-on coated on the metaltrace 24, on the metal bump 22 and on the passivation layer 14, next thepolymer layer is exposed using 1× stepper with at least two of G-linehaving a wavelength ranging from 434 to 438 nm, H-line having awavelength ranging from 403 to 407 nm, and I-line having a wavelengthranging from 363 to 367 nm, illuminating the baked polyimide layer, thatis, G-line and H-line, G-line and I-line, H-line and I-line, or G-line,H-line and I-line illuminate the baked polyimide layer, next the exposedpolymer is developed to uncover the metal bump 22, next the polymerlayer is cured at a peak temperature of between 250 and 400° C. for atime of between 30 and 200 minutes, or at a temperature of more than400° C. for a time of less than 30 minutes, in a nitrogen ambient or inan oxygen-free ambient, wherein the cured polymer layer, such aspolyimide, may have a thickness of between 3 and 25 microns, and nextthe residual polymeric material or other contaminants on the metal bump22 with an O₂ plasma or a plasma containing fluorine of below 200 PPMand oxygen. Alternatively, a polymer layer, such as benzocyclobutane(BCB), may be formed to cover the metal trace 24 and the passivationlayer 14, but to uncover the metal bump 22.

Alternatively, referring to FIG. 2I, a metal trace 24 may be formed bysputtering a titanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on thealuminum-containing layer of the metal cap 18 on the pad 16, principallymade of electroplated copper, exposed by the opening 14 a, and on thepassivation layer 14, then sputtering a seed layer, such as gold, havinga thickness of between 0.03 and 1 microns, and preferably of between0.05 and 0.5 microns, on the adhesion/barrier layer, then forming aphotoresist layer on the seed layer, an opening in the photoresist layerwith a trace pattern exposing the seed layer, then electroplating a goldlayer having a thickness of between 1 and 20 microns, and preferably ofbetween 2 and 15 microns, on the seed layer exposed by the opening inthe photoresist layer, then removing the photoresist layers, thenremoving the seed layer not under the electroplated gold layer, and thenremoving the adhesion/barrier layer not under the electroplated goldlayer. Alternatively, the metal trace 24 may be formed by sputtering atitanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on thealuminum-containing layer of the metal cap 18 on the pad 16, principallymade of electroplated copper, exposed by the opening 14 a, and on thepassivation layer 14, then sputtering a seed layer, such as copper,having a thickness of between 0.03 and 1 microns, and preferably ofbetween 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a photoresist layer on the seed layer, an opening in thephotoresist layer with a trace pattern exposing the seed layer, thenelectroplating a copper layer having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the photoresist layer, then removing thephotoresist layers, then removing the seed layer not under theelectroplated copper layer, and then removing the adhesion/barrier layernot under the electroplated copper layer. Alternatively, the metal trace24 may be formed by sputtering a titanium-containing layer, such astitanium layer or titanium-tungsten-alloy layer, having a thickness ofbetween 0.01 and 0.7 microns, and preferably of between 0.03 and 0.35microns, on the aluminum-containing layer of the metal cap 18 on the pad16, principally made of electroplated copper, exposed by the opening 14a, and on the passivation layer 14, then sputtering a seed layer, suchas copper, having a thickness of between 0.03 and 1 microns, andpreferably of between 0.05 and 0.5 microns, on the adhesion/barrierlayer, then forming a photoresist layer on the seed layer, an opening inthe photoresist layer with a trace pattern exposing the seed layer, thenelectroplating a copper layer having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the photoresist layer, then electroplating anickel layer having a thickness of between 1 and 10 microns on theelectroplated copper layer in the opening in the photoresist layer, thenremoving the photoresist layers, then removing the seed layer not underthe electroplated copper layer, and then removing the adhesion/barrierlayer not under the electroplated copper layer. Alternatively, the metaltrace 24 may be formed by sputtering a titanium-containing layer, suchas titanium layer or titanium-tungsten-alloy layer, having a thicknessof between 0.01 and 0.7 microns, and preferably of between 0.03 and 0.35microns, on the aluminum-containing layer of the metal cap 18 on the pad16, principally made of electroplated copper, exposed by the opening 14a, and on the passivation layer 14, then sputtering a seed layer, suchas copper, having a thickness of between 0.03 and 1 microns, andpreferably of between 0.05 and 0.5 microns, on the adhesion/barrierlayer, then forming a photoresist layer on the seed layer, an opening inthe photoresist layer with a trace pattern exposing the seed layer, thenelectroplating a copper layer having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the photoresist layer, then electroplating anickel layer having a thickness of between 1 and 10 microns on theelectroplated copper layer in the opening in the photoresist layer, thenelectroplating a gold layer having a thickness of between 0.01 and 3microns on the electroplated nickel layer in the opening in thephotoresist layer, then removing the photoresist layers, then removingthe seed layer not under the electroplated copper layer, and thenremoving the adhesion/barrier layer not under the electroplated copperlayer.

Referring to FIG. 2I, after the metal trace 24 is formed, a polymerlayer 26 can be formed on the metal trace 24 and on the passivationlayer 14, an opening 26 a in the polymer layer 26 exposing a pad of themetal trace 24. From a top perspective view, the position of the padexposed by the opening 26 a may be different from that of the metal cap18 to which the metal trace 24 is connected. The polymer layer 26 can beformed by spin-on coating a positive-type photosensitive polyimide layerhaving a thickness of between 3 and 50 μm, and preferably of between 6and 24 μm, on the passivation layer 14 and on the metal trace 24, thenbaking the spin-on coated polyimide layer, then exposing the bakedpolyimide layer using a 1× stepper or 1× contact aligner with at leasttwo of G-line having a wavelength ranging from 434 to 438 nm, H-linehaving a wavelength ranging from 403 to 407 nm, and I-line having awavelength ranging from 363 to 367 nm, illuminating the baked polyimidelayer, that is, G-line and H-line, G-line and Mine, H-line and I-line,or G-line, H-line and I-line illuminate the baked polyimide layer, thendeveloping the exposed polyimide layer, an opening in the developedpolyimide layer exposing the pad of the metal trace 24, then curing orheating the developed polyimide layer at a peak temperature of between250 and 400° C. for a time of between 30 and 200 minutes, or at atemperature of more than 400° C. for a time of less than 30 minutes, ina nitrogen ambient or in an oxygen-free ambient, the cured polyimidelayer having a thickness of between 3 and 26 μm, and preferably between3 and 15 μm, and then removing the residual polymeric material or othercontaminants on the pad of the metal trace 24 exposed by the opening inthe cured polyimide layer with an O₂ plasma or a plasma containingfluorine of below 200 PPM and oxygen, such that the polyimide layer canbe patterned with at least one opening 26 a in the polyimide layerexposing at least one pad of the metal trace 24. Next, the metal bump 22having a thickness of between 5 and 150 μm, and preferably of between 20and 50 μm, is formed on the metal trace 24 exposed by the opening 26 a.The method for forming the metal bump 22 on the pad exposed by theopening 26 a can be referred to the above description, as illustrated inFIGS. 2A-a through 2A-g, of forming the metal bump 22 on the pad 16exposed by the opening 14 a. The metal bump 22 shown in FIG. 2I can beformed by sputtering the adhesion/barrier layer 102 on the pad exposedby the opening 26 a and on the polymer layer 26, followed by the stepsshown in FIGS. 2A-b through 2A-g.

Referring to FIGS. 3A and 3B, a polymer layer 28 can be formed on thepassivation layer 14, and at least one opening 28 a is formed in thepolymer layer 28 by patterning the polymer layer 28 to expose at leastone pad 16, such as aluminum pad or copper pad. The pad 16 may include acenter portion exposed by an opening 28 a and a peripheral portioncovered with the polymer layer 28, as shown in FIG. 3A. Alternatively,the opening 28 a may expose the entire upper surface of the pad 16exposed by the opening 14 a in the passivation layer 14 and further mayexpose the upper surface of the passivation layer 14 near the pad 16, asshown in FIG. 3B. The polymer layer 28 can be formed by spin-on coatinga positive-type photosensitive polyimide layer having a thickness ofbetween 3 and 50 μm, and preferably of between 6 and 24 μm, on thepassivation layer 14 and on the pad 16, then baking the spin-on coatedpolyimide layer, then exposing the baked polyimide layer using a 1×stepper or 1× contact aligner with at least two of G-line having awavelength ranging from 434 to 438 nm, H-line having a wavelengthranging from 403 to 407 nm, and I-line having a wavelength ranging from363 to 367 nm, illuminating the baked polyimide layer, that is, G-lineand H-line, G-line and I-line, H-line and Mine, or G-line, H-line andMine illuminate the baked polyimide layer, then developing the exposedpolyimide layer, an opening in the developed polyimide layer exposingthe pad 16, then curing or heating the developed polyimide layer at apeak temperature of between 250 and 400° C. for a time of between 30 and200 minutes, or at a temperature of more than 400° C. for a time of lessthan 30 minutes, in a nitrogen ambient or in an oxygen-free ambient, thecured polyimide layer having a thickness of between 3 and 26 μm, andpreferably between 3 and 15 μm, and then removing the residual polymericmaterial or other contaminants on the pad 16 exposed by the opening inthe cured polyimide layer with an O₂ plasma or a plasma containingfluorine of below 200 PPM and oxygen, such that the polyimide layer canbe patterned with at least one opening 28 a in the polyimide layerexposing at least one pad 16.

Alternatively, the material of the polymer layer 28 may includebenzocyclobutane (BCB), polyurethane, epoxy resin, a parylene-basedpolymer, a solder-mask material, an elastomer, or a porous dielectricmaterial. The polymer layer 28 has a thickness of between 3 and 25 μm.For example, the polymer layer 28 may be a benzocyclobutane (BCB) layerhaving a thickness of between 3 and 25 μm on the passivation layer 14.Alternatively, the polymer layer 28 may be an epoxy resin layer having athickness of between 3 and 25 μm on the passivation layer 14. Thepolymer layer 28 can be formed by a spin-on coating process, alamination process or a screen-printing process.

Referring to FIGS. 3C and 3D, the metal bump 22 having a thickness ofbetween 5 and 150 μm, and preferably of between 20 and 50 μm, is formedon the pad 16, such as aluminum pad or copper pad, exposed by theopening 28. The method of forming the metal bump 22 on the pad 16exposed by the opening 28 a can be referred to the above descriptionconcerning FIGS. 2A-a through 2A-g of forming the metal bump 22 on thepad 16 exposed by the opening 14 a. The metal bump 22 shown in FIGS. 3Cand 3D can be formed by sputtering the adhesion/barrier layer 102 on thepad 16 exposed by the opening 28 a and on the polymer layer 28, followedby the steps shown in FIGS. 2A-b through 2A-g.

Referring to FIG. 3E, a metal trace 30 can be formed on the polymerlayer 28 and on the pad 16, such as aluminum pad or copper pad, exposedby the opening 28 a. For example, the metal trace 30 may comprise a goldlayer with a thickness of between 2 and 15 μm on the polymer layer 28and on the pad 16, such as aluminum pad or copper pad, exposed by theopening 28 a. Alternatively, the metal trace 30 may comprise a copperlayer with a thickness of between 2 and 1.5 μm on the polymer layer 28and on the pad 16, such as aluminum pad or copper pad, exposed by theopening 28 a. Alternatively, the metal trace 30 may comprise a copperlayer having a thickness of between 1 and 20 μm on the polymer layer 28and on the pad 16, such as aluminum pad or copper pad, exposed by theopening 28 a, a nickel layer having a thickness of between 0.5 and 5 μmon the copper layer, and a gold layer having a thickness of between 0.01and 5 μm on the nickel layer.

Next, referring to FIG. 3F, the metal bump 22 having a thickness ofbetween 5 and 150 μm, and preferably of between 20 and 50 μm, is formedon the metal trace 30. From a top perspective view, the position of themetal bump 22 may be different from that of the pad 16 to which themetal trace 30 is connected. In this embodiment, the above-mentionedadhesion/barrier layer 102 and seed layer 104 of the metal bump 22 shownin FIG. 2A-g may be saved when the metal bump 22 shown in FIG. 3F isformed on the metal trace 30; that is, the above-mentioned electroplatedmetal layer 108 of the metal bump 22 shown in FIG. 2A-g may be formeddirectly on the metal trace 30 when the metal bump 22 shown in FIG. 3Fis formed on the metal trace 30. In a case, the metal trace 30 and metalbump 22, shown in FIG. 3F, may be formed by sputtering atitanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on the pad16, principally made of sputtered aluminum or electroplated copper,exposed by the opening 28 a, and on the polymer layer 28, thensputtering a seed layer, such as gold, having a thickness of between0.03 and 1 microns, and preferably of between 0.05 and 0.5 microns, onthe adhesion/barrier layer, then forming a first photoresist layer onthe seed layer, an opening in the first photoresist layer with a tracepattern exposing the seed layer, then electroplating a first gold layer,for the metal trace 30, having a thickness of between 1 and 20 microns,and preferably of between 2 and 15 microns, on the seed layer exposed bythe opening in the first photoresist layer, then forming a secondphotoresist layer on the first gold layer and on the first photoresistlayer, an opening in the second photoresist layer with a bump patternexposing the first gold layer, then electroplating a second gold layer,for the metal bump 22, having a thickness of between 5 and 150 microns,and preferably of between 20 and 50 microns, on the first gold layerexposed by the opening in the second photoresist layer, then removingthe second and first photoresist layers, then removing the seed layernot under the first gold layer, and then removing the adhesion/barrierlayer not under the first gold layer.

Alternatively, the metal trace 30 and metal bump 22 shown in FIG. 3F maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the pad 16, principally made of sputtered aluminum or electroplatedcopper, exposed by the opening 28 a, and on the polymer layer 28, thensputtering a seed layer, such as copper, having a thickness of between0.03 and 1 microns, and preferably of between 0.05 and 0.5 microns, onthe adhesion/barrier layer, then forming a first photoresist layer onthe seed layer, an opening in the first photoresist layer with a tracepattern exposing the seed layer, then electroplating a first copperlayer, for the metal trace 30, having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the first photoresist layer, then forming asecond photoresist layer on the first copper layer and on the firstphotoresist layer, an opening in the second photoresist layer with abump pattern exposing the first copper layer, then electroplating asecond copper layer, for the metal bump 22, having a thickness ofbetween 5 and 150 microns, and preferably of between 20 and 50 microns,on the first copper layer exposed by the opening in the secondphotoresist layer, then removing the second and first photoresistlayers, then removing the seed layer not under the first copper layer,and then removing the adhesion/barrier layer not under the first copperlayer.

Alternatively, the metal trace 30 and metal bump 22 shown in FIG. 3F maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the pad 16, principally made of sputtered aluminum or electroplatedcopper, exposed by the opening 28 a, and on the polymer layer 28, thensputtering a seed layer, such as copper, having a thickness of between0.03 and 1 microns, and preferably of between 0.05 and 0.5 microns, onthe adhesion/barrier layer, then forming a first photoresist layer onthe seed layer, an opening in the first photoresist layer with a tracepattern exposing the seed layer, then electroplating a first copperlayer, for the metal trace 30, having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the first photoresist layer, then forming asecond photoresist layer on the first copper layer and on the firstphotoresist layer, an opening in the second photoresist layer with abump pattern exposing the first copper layer, then electroplating asecond copper layer, for the metal bump 22, having a thickness ofbetween 5 and 150 microns, and preferably of between 20 and 50 microns,on the first copper layer exposed by the opening in the secondphotoresist layer, then electroplating a nickel layer, for the metalbump 22, having a thickness of between 1 and 10 microns, on the secondcopper layer in the opening in the second photoresist layer, thenremoving the second and first photoresist layers, then removing the seedlayer not under the first copper layer, and then removing theadhesion/barrier layer not under the first copper layer.

Alternatively, the metal trace 30 and metal bump 22 shown in FIG. 3F maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the pad 16, principally made of sputtered aluminum or electroplatedcopper, exposed by the opening 28 a, and on the polymer layer 28, thensputtering a seed layer, such as copper, having a thickness of between0.03 and 1 microns, and preferably of between 0.05 and 0.5 microns, onthe adhesion/barrier layer, then forming a first photoresist layer onthe seed layer, an opening in the first photoresist layer with a tracepattern exposing the seed layer, then electroplating a first copperlayer, for the metal trace 30, having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the first photoresist layer, then forming asecond photoresist layer on the first copper layer and on the firstphotoresist layer, an opening in the second photoresist layer with abump pattern exposing the first copper layer, then electroplating asecond copper layer, for the metal bump 22, having a thickness ofbetween 5 and 150 microns, and preferably of between 20 and 50 microns,on the first copper layer exposed by the opening in the secondphotoresist layer, then electroplating a nickel layer, for the metalbump 22, having a thickness of between 1 and 10 microns, on the secondcopper layer in the opening in the second photoresist layer, thenelectroplating a gold layer, for the metal bump 22, having a thicknessof between 1 and 10 microns, on the nickel layer in the opening in thesecond photoresist layer, then removing the second and first photoresistlayers, then removing the seed layer not under the first copper layer,and then removing the adhesion/barrier layer not under the first copperlayer.

Thereby, referring to FIG. 3F, the metal bump 22 may include anelectroplated gold layer having a thickness of between 5 and 150 μm, andpreferably of between 20 and 50 μm, directly on a gold layer of themetal trace 30. Alternatively, the metal bump 22 may be formed of anelectroplated copper layer having a thickness of between 5 and 150 μm,and preferably of between 20 and 50 μm, directly on a copper layer ofthe metal trace 30. Alternatively, after the metal trace 30 and themetal bump 22 are formed, a polymer layer, such as a photosensitivepolyimide layer having a thickness of between 5 and 30 μm, can bespin-on coated on the metal trace 30, on the metal bump 22 and on thepolymer layer 28, next the polymer layer is exposed using 1× stepperwith at least two of G-line having a wavelength ranging from 434 to 438nm, H-line having a wavelength ranging from 403 to 407 nm, and Minehaving a wavelength ranging from 363 to 367 nm, illuminating the bakedpolyimide layer, that is, G-line and H-line, G-line and I-line, H-lineand I-line, or G-line, H-line and Mine illuminate the baked polyimidelayer, next the exposed polymer is developed to uncover the metal bump22, next the polymer layer is cured at a peak temperature of between 250and 400° C. for a time of between 30 and 200 minutes, or at atemperature of more than 400° C. for a time of less than 30 minutes, ina nitrogen ambient or in an oxygen-free ambient, wherein the curedpolymer layer, such as polyimide, may have a thickness of between 3 and25 microns, and next the residual polymeric material or othercontaminants on the metal bump 22 with an O₂ plasma or a plasmacontaining fluorine of below 200 PPM and oxygen. Alternatively, apolymer layer, such as benzocyclobutane (BCB), may be formed to coverthe metal trace 30 and the polymer layer 28, but to uncover the metalbump 22.

Alternatively, referring to FIG. 3G, a metal trace 30 may be formed bysputtering a titanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on the pad16, principally made of sputtered aluminum or electroplated copper,exposed by the opening 28 a, and on the polymer layer 28, thensputtering a seed layer, such as gold, having a thickness of between0.03 and 1 microns, and preferably of between 0.05 and 0.5 microns, onthe adhesion/barrier layer, then forming a photoresist layer on the seedlayer, an opening in the photoresist layer with a trace pattern exposingthe seed layer, then electroplating a gold layer having a thickness ofbetween 1 and 20 microns, and preferably of between 2 and 15 microns, onthe seed layer exposed by the opening in the photoresist layer, thenremoving the photoresist layers, then removing the seed layer not underthe electroplated gold layer, and then removing the adhesion/barrierlayer not under the electroplated gold layer. Alternatively, the metaltrace 30 may be formed by sputtering a titanium-containing layer, suchas titanium layer or titanium-tungsten-alloy layer, having a thicknessof between 0.01 and 0.7 microns, and preferably of between 0.03 and 0.35microns, on the pad 16, principally made of sputtered aluminum orelectroplated copper, exposed by the opening 28 a, and on the polymerlayer 28, then sputtering a seed layer, such as copper, having athickness of between 0.03 and 1 microns, and preferably of between 0.05and 0.5 microns, on the adhesion/barrier layer, then forming aphotoresist layer on the seed layer, an opening in the photoresist layerwith a trace pattern exposing the seed layer, then electroplating acopper layer having a thickness of between 1 and 20 microns, andpreferably of between 2 and 15 microns, on the seed layer exposed by theopening in the photoresist layer, then removing the photoresist layers,then removing the seed layer not under the electroplated copper layer,and then removing the adhesion/barrier layer not under the electroplatedcopper layer. Alternatively, the metal trace 30 may be formed bysputtering a titanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on the pad16, principally made of sputtered aluminum or electroplated copper,exposed by the opening 28 a, and on the polymer layer 28, thensputtering a seed layer, such as copper, having a thickness of between0.03 and 1 microns, and preferably of between 0.05 and 0.5 microns, onthe adhesion/barrier layer, then forming a photoresist layer on the seedlayer, an opening in the photoresist layer with a trace pattern exposingthe seed layer, then electroplating a copper layer having a thickness ofbetween 1 and 20 microns, and preferably of between 2 and 15 microns, onthe seed layer exposed by the opening in the photoresist layer, thenelectroplating a nickel layer having a thickness of between 1 and 10microns on the electroplated copper layer in the opening in thephotoresist layer, then removing the photoresist layers, then removingthe seed layer not under the electroplated copper layer, and thenremoving the adhesion/barrier layer not under the electroplated copperlayer. Alternatively, the metal trace 30 may be formed by sputtering atitanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on the pad16, principally made of sputtered aluminum or electroplated copper,exposed by the opening 28 a, and on the polymer layer 28, thensputtering a seed layer, such as copper, having a thickness of between0.03 and 1 microns, and preferably of between 0.05 and 0.5 microns, onthe adhesion/barrier layer, then forming a photoresist layer on the seedlayer, an opening in the photoresist layer with a trace pattern exposingthe seed layer, then electroplating a copper layer having a thickness ofbetween 1 and 20 microns, and preferably of between 2 and 15 microns, onthe seed layer exposed by the opening in the photoresist layer, thenelectroplating a nickel layer having a thickness of between 1 and 10microns on the electroplated copper layer in the opening in thephotoresist layer, then electroplating a gold layer having a thicknessof between 0.01 and 3 microns on the electroplated nickel layer in theopening in the photoresist layer, then removing the photoresist layers,then removing the seed layer not under the electroplated copper layer,and then removing the adhesion/barrier layer not under the electroplatedcopper layer.

Referring to FIG. 3G, after the metal trace 30 is formed, a polymerlayer 32 can be formed on the metal trace 30 and on the polymer layer28, an opening 32 a in the polymer layer 32 exposing a pad of the metaltrace 30. From a top perspective view, the position of the pad exposedby the opening 32 a may be different from that of the pad 16 to whichthe metal trace 30 is connected. The polymer layer 32 can be formed byspin-on coating a positive-type photosensitive polyimide layer having athickness of between 3 and 50 μm, and preferably of between 6 and 24 μm,on the polymer layer 28 and on the metal trace 30, then baking thespin-on coated polyimide layer, then exposing the baked polyimide layerusing a 1× stepper or 1× contact aligner with at least two of G-linehaving a wavelength ranging from 434 to 438 nm, H-line having awavelength ranging from 403 to 407 nm, and I-line having a wavelengthranging from 363 to 367 nm, illuminating the baked polyimide layer, thatis, G-line and H-line, G-line and Mine, H-line and Mine, or G-line,H-line and I-line illuminate the baked polyimide layer, then developingthe exposed polyimide layer, an opening in the developed polyimide layerexposing the pad of the metal trace 30, then curing or heating thedeveloped polyimide layer at a peak temperature of between 250 and 400°C. for a time of between 30 and 200 minutes, or at a temperature of morethan 400° C. for a time of less than 30 minutes, in a nitrogen ambientor in an oxygen-free ambient, the cured polyimide layer having athickness of between 3 and 26 μm, and preferably between 3 and 15 μm,and then removing the residual polymeric material or other contaminantson the pad of the metal trace 30 exposed by the opening in the curedpolyimide layer with an O₂ plasma or a plasma containing fluorine ofbelow 200 PPM and oxygen, such that the polyimide layer can be patternedwith at least one opening 32 a in the polyimide layer exposing at leastone pad of the metal trace 30. Next, the metal bump 22 having athickness of between 5 and 150 μm, and preferably of between 20 and 50μm, is formed on the metal trace 30 exposed by the opening 32 a. Themethod for forming the metal bump 22 on the pad exposed by the opening32 a can be referred to the above description, as illustrated in FIGS.2A-a through 2A-g, of forming the metal bump 22 on the pad 16 exposed bythe opening 14 a. The metal bump 22 can be formed by sputtering theadhesion/barrier layer 102 on the pad exposed by the opening 32 a and onthe polymer layer 32, followed by the steps shown in FIGS. 2A-b through2A-g.

Alternatively, the material of the polymer layer 32 may includebenzocyclobutane (BCB), polyurethane, epoxy resin, a parylene-basedpolymer, a solder-mask material, an elastomer, or a porous dielectricmaterial. The polymer layer 32 has a thickness of between 3 and 25 μm.For example, the polymer layer 32 may be a benzocyclobutane (BCB) layerhaving a thickness of between 3 and 25 μm on the polymer layer 28 and onthe metal trace 30. Alternatively, the polymer layer 32 may be an epoxyresin layer having a thickness of between 3 and 25 μm on the polymerlayer 28 and on the metal trace 30. The polymer layer 32 can be formedby a spin-on coating process, a lamination process or a screen-printingprocess.

Alternatively, the opening 28 a in the polymer layer 28 shown in FIGS.3C-3G may expose the entire top surface of the pad 16 exposed by theopening 14 a in the passivation layer 14 and the top surface of thepassivation layer 14 close to the pad 16, as shown in FIG. 3B.

Referring to FIG. 4A, the polymer layer 28 can be formed on thepassivation layer 14, an opening 28 a in the polymer layer 28 exposingthe aluminum-containing layer of the metal cap 18 on the pad 16,principally made of copper, exposed by the opening 14 a. The method offorming the polymer layer 28 shown in FIGS. 4A-4E on the metal cap 18and on the passivation layer 14 can be referred to the method of formingthe polymer layer 28 shown in FIGS. 3A-3G on the passivation layer 14.The polymer layer 28 can be formed by spin-on coating a positive-typephotosensitive polyimide layer having a thickness of between 3 and 50μm, and preferably of between 6 and 24 μm, on the passivation layer 14and on the aluminum-containing layer of the metal cap 18 on the pad 16,principally made of electroplated copper, then baking the spin-on coatedpolyimide layer, then exposing the baked polyimide layer using a 1×stepper or 1× contact aligner with at least two of G-line having awavelength ranging from 434 to 438 nm, H-line having a wavelengthranging from 403 to 407 nm, and I-line having a wavelength ranging from363 to 367 nm, illuminating the baked polyimide layer, that is, G-lineand H-line, G-line and I-line, H-line and I-line, or G-line, H-line andI-line illuminate the baked polyimide layer, then developing the exposedpolyimide layer, an opening in the developed polyimide layer exposingthe aluminum-containing layer of the metal cap 18, then curing orheating the developed polyimide layer at a peak temperature of between250 and 400° C. for a time of between 30 and 200 minutes, or at atemperature of more than 400° C. for a time of less than 30 minutes, ina nitrogen ambient or in an oxygen-free ambient, the cured polyimidelayer having a thickness of between 3 and 26 μm, and preferably between3 and 15 μm, and then removing the residual polymeric material or othercontaminants on the aluminum-containing layer of the metal cap 18exposed by the opening in the cured polyimide layer with an O₂ plasma ora plasma containing fluorine of below 200 PPM and oxygen, such that thepolyimide layer can be patterned with at least one opening 28 a in thepolyimide layer exposing the aluminum-containing layer of at least onemetal cap 18.

Referring to FIG. 4B, after the polymer layer 28 is formed, the metalbump 22 having a thickness of between 5 and 150 μm, and preferably ofbetween 20 and 50 μm, is formed on the aluminum-containing layer of themetal cap 18 on the pad 16, principally made of copper, exposed by theopening 14 a. The method for forming the metal bump 22 on thealuminum-containing layer of the metal cap 18 exposed by the opening 28a can be referred to the above description, as illustrated in FIGS. 2A-athrough 2A-g, of forming the metal bump 22 on the pad 16 exposed by theopening 14 a. The metal bump 22 shown in FIG. 4B can be formed bysputtering the adhesion/barrier layer 102 on the aluminum-containinglayer of the metal cap 18 exposed by the opening 28 a and on the polymerlayer 32, followed by the steps shown in FIGS. 2A-b through 2A-g.

Referring to FIG. 4C, a metal trace 30 can be formed on the polymerlayer 28 and on the aluminum-containing layer of the metal cap 18exposed by the opening 28 a. For example, the metal trace 30 maycomprise a gold layer with a thickness of between 2 and 15 μm on thepolymer layer 28 and on the aluminum-containing layer of the metal cap18 exposed by the opening 28 a. Alternatively, the metal trace 30 maycomprise a copper layer with a thickness of between 2 and 15 μm on thepolymer layer 28 and on the aluminum-containing layer of the metal cap18 exposed by the opening 28 a. Alternatively, the metal trace 30 maycomprise a copper layer having a thickness of between 1 and 20 μm on thepolymer layer 28 and on the aluminum-containing layer of the metal cap18 exposed by the opening 28 a, a nickel layer having a thickness ofbetween 0.5 and 5 μm on the copper layer, and a gold layer having athickness of between 0.01 and 5 μm on the nickel layer.

Next, referring to FIG. 4D, the metal bump 22 having a thickness ofbetween 5 and 150 μm, and preferably of between 20 and 50 μm, is formedon the metal trace 30. From a top perspective view, the position of themetal bump 22 may be different from that of the metal cap 18 to whichthe metal trace 30 is connected. In this embodiment, the above-mentionedadhesion/barrier layer 102 and seed layer 104 of the metal bump 22 shownin FIG. 2A-g may be saved when the metal bump 22 shown in FIG. 4D isformed on the metal trace 30; that is, the above-mentioned electroplatedmetal layer 108 of the metal bump 22 shown in FIG. 2A-g may be formeddirectly on the metal trace 30 when the metal bump 22 shown in FIG. 4Dis formed on the metal trace 30. In a case, the metal trace 30 and metalbump 22, shown in FIG. 4D, may be formed by sputtering atitanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on thealuminum-containing layer of the metal cap 18 on the pad 16, principallymade of electroplated copper, exposed by the opening 28 a, and on thepolymer layer 28, then sputtering a seed layer, such as gold, having athickness of between 0.03 and 1 microns, and preferably of between 0.05and 0.5 microns, on the adhesion/barrier layer, then forming a firstphotoresist layer on the seed layer, an opening in the first photoresistlayer with a trace pattern exposing the seed layer, then electroplatinga first gold layer, for the metal trace 30, having a thickness ofbetween 1 and 20 microns, and preferably of between 2 and 15 microns, onthe seed layer exposed by the opening in the first photoresist layer,then forming a second photoresist layer on the first gold layer and onthe first photoresist layer, an opening in the second photoresist layerwith a bump pattern exposing the first gold layer, then electroplating asecond gold layer, for the metal bump 22, having a thickness of between5 and 150 microns, and preferably of between 20 and 50 microns, on thefirst gold layer exposed by the opening in the second photoresist layer,then removing the second and first photoresist layers, then removing theseed layer not under the first gold layer, and then removing theadhesion/barrier layer not under the first gold layer.

Alternatively, the metal trace 30 and metal bump 22 shown in FIG. 4D maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the aluminum-containing layer of the metal cap 18 on the pad 16,principally made of electroplated copper, exposed by the opening 28 a,and on the polymer layer 28, then sputtering a seed layer, such ascopper, having a thickness of between 0.03 and 1 microns, and preferablyof between 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a first photoresist layer on the seed layer, an opening in thefirst photoresist layer with a trace pattern exposing the seed layer,then electroplating a first copper layer, for the metal trace 30, havinga thickness of between 1 and 20 microns, and preferably of between 2 and15 microns, on the seed layer exposed by the opening in the firstphotoresist layer, then forming a second photoresist layer on the firstcopper layer and on the first photoresist layer, an opening in thesecond photoresist layer with a bump pattern exposing the first copperlayer, then electroplating a second copper layer, for the metal bump 22,having a thickness of between 5 and 150 microns, and preferably ofbetween 20 and 50 microns, on the first copper layer exposed by theopening in the second photoresist layer, then removing the second andfirst photoresist layers, then removing the seed layer not under thefirst copper layer, and then removing the adhesion/barrier layer notunder the first copper layer.

Alternatively, the metal trace 30 and metal bump 22 shown in FIG. 4D maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the aluminum-containing layer of the metal cap 18 on the pad 16,principally made of electroplated copper, exposed by the opening 28 a,and on the polymer layer 28, then sputtering a seed layer, such ascopper, having a thickness of between 0.03 and 1 microns, and preferablyof between 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a first photoresist layer on the seed layer, an opening in thefirst photoresist layer with a trace pattern exposing the seed layer,then electroplating a first copper layer, for the metal trace 30, havinga thickness of between 1 and 20 microns, and preferably of between 2 and15 microns, on the seed layer exposed by the opening in the firstphotoresist layer, then forming a second photoresist layer on the firstcopper layer and on the first photoresist layer, an opening in thesecond photoresist layer with a bump pattern exposing the first copperlayer, then electroplating a second copper layer, for the metal bump 22,having a thickness of between 5 and 150 microns, and preferably ofbetween 20 and 50 microns, on the first copper layer exposed by theopening in the second photoresist layer, then electroplating a nickellayer, for the metal bump 22, having a thickness of between 1 and 10microns, on the second copper layer in the opening in the secondphotoresist layer, then removing the second and first photoresistlayers, then removing the seed layer not under the first copper layer,and then removing the adhesion/barrier layer not under the first copperlayer.

Alternatively, the metal trace 30 and metal bump 22 shown in FIG. 4D maybe formed by sputtering a titanium-containing layer, such as titaniumlayer or titanium-tungsten-alloy layer, having a thickness of between0.01 and 0.7 microns, and preferably of between 0.03 and 0.35 microns,on the aluminum-containing layer of the metal cap 18 on the pad 16,principally made of electroplated copper, exposed by the opening 28 a,and on the polymer layer 28, then sputtering a seed layer, such ascopper, having a thickness of between 0.03 and 1 microns, and preferablyof between 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a first photoresist layer on the seed layer, an opening in thefirst photoresist layer with a trace pattern exposing the seed layer,then electroplating a first copper layer, for the metal trace 30, havinga thickness of between 1 and 20 microns, and preferably of between 2 and15 microns, on the seed layer exposed by the opening in the firstphotoresist layer, then forming a second photoresist layer on the firstcopper layer and on the first photoresist layer, an opening in thesecond photoresist layer with a bump pattern exposing the first copperlayer, then electroplating a second copper layer, for the metal bump 22,having a thickness of between 5 and 150 microns, and preferably ofbetween 20 and 50 microns, on the first copper layer exposed by theopening in the second photoresist layer, then electroplating a nickellayer, for the metal bump 22, having a thickness of between 1 and 10microns, on the second copper layer in the opening in the secondphotoresist layer, then electroplating a gold layer, for the metal bump22, having a thickness of between 1 and 10 microns, on the nickel layerin the opening in the second photoresist layer, then removing the secondand first photoresist layers, then removing the seed layer not under thefirst copper layer, and then removing the adhesion/barrier layer notunder the first copper layer.

Thereby, referring to FIG. 4D, the metal bump 22 may include anelectroplated gold layer having a thickness of between 5 and 150 μm, andpreferably of between 20 and 50 μm, directly on a gold layer of themetal trace 30. Alternatively, the metal bump 22 may be formed of anelectroplated copper layer having a thickness of between 5 and 150 μm,and preferably of between 20 and 50 μm, directly on a copper layer ofthe metal trace 30. Alternatively, after the metal trace 30 and themetal bump 22 are formed, a polymer layer, such as a photosensitivepolyimide layer having a thickness of between 5 and 30 μm, can bespin-on coated on the metal trace 30, on the metal bump 22 and on thepolymer layer 28, next the polymer layer is exposed using 1× stepperwith at least two of G-line having a wavelength ranging from 434 to 438nm, H-line having a wavelength ranging from 403 to 407 nm, and Minehaving a wavelength ranging from 363 to 367 nm, illuminating the bakedpolyimide layer, that is, G-line and H-line, G-line and I-line, H-lineand I-line, or G-line, H-line and Mine illuminate the baked polyimidelayer, next the exposed polymer is developed to uncover the metal bump22, next the polymer layer is cured at a peak temperature of between 250and 400° C. for a time of between 30 and 200 minutes, or at atemperature of more than 400° C. for a time of less than 30 minutes, ina nitrogen ambient or in an oxygen-free ambient, wherein the curedpolymer layer, such as polyimide, may have a thickness of between 3 and25 microns, and next the residual polymeric material or othercontaminants on the metal bump 22 with an O₂ plasma or a plasmacontaining fluorine of below 200 PPM and oxygen. Alternatively, apolymer layer, such as benzocyclobutane (BCB), may be formed to coverthe metal trace 30 and the polymer layer 28, but to uncover the metalbump 22.

Alternatively, referring to FIG. 4E, a metal trace 30 may be formed bysputtering a titanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on thealuminum-containing layer of the metal cap 18 on the pad 16, principallymade of electroplated copper, exposed by the opening 28 a, and on thepolymer layer 28, then sputtering a seed layer, such as gold, having athickness of between 0.03 and 1 microns, and preferably of between 0.05and 0.5 microns, on the adhesion/barrier layer, then forming aphotoresist layer on the seed layer, an opening in the photoresist layerwith a trace pattern exposing the seed layer, then electroplating a goldlayer having a thickness of between 1 and 20 microns, and preferably ofbetween 2 and 15 microns, on the seed layer exposed by the opening inthe photoresist layer, then removing the photoresist layers, thenremoving the seed layer not under the electroplated gold layer, and thenremoving the adhesion/barrier layer not under the electroplated goldlayer. Alternatively, the metal trace 30 may be formed by sputtering atitanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on thealuminum-containing layer of the metal cap 18 on the pad 16, principallymade of electroplated copper, exposed by the opening 28 a, and on thepolymer layer 28, then sputtering a seed layer, such as copper, having athickness of between 0.03 and 1 microns, and preferably of between 0.05and 0.5 microns, on the adhesion/barrier layer, then forming aphotoresist layer on the seed layer, an opening in the photoresist layerwith a trace pattern exposing the seed layer, then electroplating acopper layer having a thickness of between 1 and 20 microns, andpreferably of between 2 and 15 microns, on the seed layer exposed by theopening in the photoresist layer, then removing the photoresist layers,then removing the seed layer not under the electroplated copper layer,and then removing the adhesion/barrier layer not under the electroplatedcopper layer. Alternatively, the metal trace 30 may be formed bysputtering a titanium-containing layer, such as titanium layer ortitanium-tungsten-alloy layer, having a thickness of between 0.01 and0.7 microns, and preferably of between 0.03 and 0.35 microns, on thealuminum-containing layer of the metal cap 18 on the pad 16, principallymade of electroplated copper, exposed by the opening 28 a, and on thepolymer layer 28, then sputtering a seed layer, such as copper, having athickness of between 0.03 and 1 microns, and preferably of between 0.05and 0.5 microns, on the adhesion/barrier layer, then forming aphotoresist layer on the seed layer, an opening in the photoresist layerwith a trace pattern exposing the seed layer, then electroplating acopper layer having a thickness of between 1 and 20 microns, andpreferably of between 2 and 15 microns, on the seed layer exposed by theopening in the photoresist layer, then electroplating a nickel layerhaving a thickness of between 1 and 10 microns on the electroplatedcopper layer in the opening in the photoresist layer, then removing thephotoresist layers, then removing the seed layer not under theelectroplated copper layer, and then removing the adhesion/barrier layernot under the electroplated copper layer. Alternatively, the metal trace30 may be formed by sputtering a titanium-containing layer, such astitanium layer or titanium-tungsten-alloy layer, having a thickness ofbetween 0.01 and 0.7 microns, and preferably of between 0.03 and 0.35microns, on the aluminum-containing layer of the metal cap 18 on the pad16, principally made of electroplated copper, exposed by the opening 28a, and on the polymer layer 28, then sputtering a seed layer, such ascopper, having a thickness of between 0.03 and 1 microns, and preferablyof between 0.05 and 0.5 microns, on the adhesion/barrier layer, thenforming a photoresist layer on the seed layer, an opening in thephotoresist layer with a trace pattern exposing the seed layer, thenelectroplating a copper layer having a thickness of between 1 and 20microns, and preferably of between 2 and 15 microns, on the seed layerexposed by the opening in the photoresist layer, then electroplating anickel layer having a thickness of between 1 and 10 microns on theelectroplated copper layer in the opening in the photoresist layer, thenelectroplating a gold layer having a thickness of between 0.01 and 3microns on the electroplated nickel layer in the opening in thephotoresist layer, then removing the photoresist layers, then removingthe seed layer not under the electroplated copper layer, and thenremoving the adhesion/barrier layer not under the electroplated copperlayer.

Referring to FIG. 4E, after the metal trace 30 is formed, a polymerlayer 32 can be formed on the metal trace 30 and on the polymer layer28, an opening 32 a in the polymer layer 32 exposing a pad of the metaltrace 30. From a top perspective view, the position of the pad exposedby the opening 32 a may be different from that of the metal cap 18 towhich the metal trace 30 is connected. The polymer layer 32 can beformed by spin-on coating a positive-type photosensitive polyimide layerhaving a thickness of between 3 and 50 μm, and preferably of between 6and 24 μm, on the polymer layer 28 and on the metal trace 30, thenbaking the spin-on coated polyimide layer, then exposing the bakedpolyimide layer using a 1× stepper or 1× contact aligner with at leasttwo of G-line having a wavelength ranging from 434 to 438 nm, H-linehaving a wavelength ranging from 403 to 407 nm, and I-line having awavelength ranging from 363 to 367 nm, illuminating the baked polyimidelayer, that is, G-line and H-line, G-line and I-line, H-line and I-line,or G-line, H-line and I-line illuminate the baked polyimide layer, thendeveloping the exposed polyimide layer, an opening in the developedpolyimide layer exposing the pad of the metal trace 30, then curing orheating the developed polyimide layer at a peak temperature of between250 and 400° C. for a time of between 30 and 200 minutes, or at atemperature of more than 400° C. for a time of less than 30 minutes, ina nitrogen ambient or in an oxygen-free ambient, the cured polyimidelayer having a thickness of between 3 and 26 μm, and preferably between3 and 15 μm, and then removing the residual polymeric material or othercontaminants on the pad of the metal trace 30 exposed by the opening inthe cured polyimide layer with an O₂ plasma or a plasma containingfluorine of below 200 PPM and oxygen, such that the polyimide layer canbe patterned with at least one opening 32 a in the polyimide layerexposing at least one pad of the metal trace 30. Next, the metal bump 22having a thickness of between 5 and 150 μm, and preferably of between 20and 50 μm, is formed on the metal trace 30 exposed by the opening 32 a.The method for forming the metal bump 22 on the pad exposed by theopening 32 a can be referred to the above description, as illustrated inFIGS. 2A-a through 2A-g, of forming the metal bump 22 on the pad 16exposed by the opening 14 a. The metal bump 22 shown in FIG. 4E can beformed by sputtering the adhesion/barrier layer 102 on the pad exposedby the opening 32 a and on the polymer layer 32, followed by the stepsshown in FIGS. 2A-b through 2A-g.

In the present invention, alternatively, multiple polymer layers can beformed over the passivation layer 14, and multiple metal traces are onthe polymer layers, respectively. The metal bump 22 is formed on the topmetal trace. These metal traces is connected to each other, and thebottom metal trace is connected to at least one pad 16 exposed by atleast one opening or connected to at least one metal cap 18.

Referring to FIG. 5, a polymer layer 28, a bottommost polymer layer overthe passivation layer 14, is formed on the passivation layer 14, anopening 28 a in the polymer layer 28 exposing the aluminum-containinglayer of the metal cap 18. The method of forming the polymer layer 28shown in FIG. 5 on the passivation layer 12 and the structure thereofcan be referred to the method of forming the polymer layer 28 shown inFIG. 4A or 4B on the passivation layer 12 and the structure thereof.

Next, referring to FIG. 5, a metal trace 30 is formed on thealuminum-containing layer of the metal cap 18 exposed by the opening 28a and on the polymer layer 28. The method of forming the metal trace 30shown in FIG. 5 on the polymer layer 28 and the structure of thereof canbe referred to that of forming the metal trace 30 shown in FIG. 4E onthe polymer layer 28. Next, referring to FIG. 5, a polymer layer 32 isformed on the metal trace 30 and on the polymer layer 28, an opening 32a in the polymer layer 32 exposing the metal trace 30. From a topperspective view, the position of the metal trace 30 exposed by theopening 32 a may be different from that of the metal cap 18 to which themetal trace 30 is connected. The method of forming the polymer layer 32shown in FIG. 5 on the metal trace 30 and on the polymer layer 28 andthe structure thereof can be referred to the method of forming thepolymer layer 32 shown in FIG. 4A or 4B on the metal trace 30 and on thepolymer layer 28 and the structure thereof.

Next, referring to FIG. 5, a metal trace 36 is formed on the metal trace30 exposed by the opening 32 a and on the polymer layer 32. The methodof forming the metal trace 36 shown in FIG. 5 on the polymer layer 32and the structure of thereof can be referred to that of forming themetal trace 30 shown in FIG. 4E on the polymer layer 28.

Next, referring to FIG. 5, a polymer layer 34, a topmost polymer layerover the passivation layer 14, is formed on the metal trace 36 and onthe polymer layer 32, an opening 34 a in the polymer layer 34 exposing apad of the metal trace 36. From a top perspective view, the position ofthe pad of the metal trace 36 exposed by the opening 34 a may bedifferent from that of the metal cap 18. The method of forming thepolymer layer 34 shown in FIG. 5 on the metal trace 36 and on thepolymer layer 32 and the structure thereof can be referred to the methodof forming the polymer layer 32 shown in FIG. 4A or 4B on the metaltrace 30 and on the polymer layer 28 and the structure thereof.

Next, referring to FIG. 5, a metal bump 22 is formed on the pad of themetal trace 36 exposed by the opening 34 a. The method of forming themetal bump 22 shown in FIG. 5 on the pad of the metal trace 36 and thestructure thereof can be referred to the method of forming the metalbump 32 shown in FIG. 4E on a pad of the metal trace 30 exposed by theopening 32 a and the structure thereof.

The material of the metal trace 36 may include gold, copper or nickel.For example, the metal trace 36 may comprise a gold layer with athickness of between 2 and 15 μm on the metal trace 30 exposed by theopening 32 a and on the polymer layer 32. Alternatively, the metal trace36 may comprise a copper layer with a thickness of between 2 and 15 μmon the metal trace 30 exposed by the opening 32 a and on the polymerlayer 32. Alternatively, the metal trace 36 may comprise a copper layerhaving a thickness of between 1 and 20 μm on the metal trace 30 exposedby the opening 32 a and on the polymer layer 32, a nickel layer having athickness of between 0.5 and 5 μm on the copper layer, and a gold layerhaving a thickness of between 0.01 and 5 μm on the nickel layer.

The material of the polymer layer 34 may include benzocyclobutane (BCB),polyimide (PI), polyurethane, epoxy resin, a parylene-based polymer, asolder-mask material, an elastomer, or a porous dielectric material. Thepolymer layer 34 has a thickness of between 3 and 25 μm. For example,the polymer layer 34 may be a polyimide (PI) layer having a thickness ofbetween 3 and 25 μm on the metal trace 36 and on the polymer layer 32.Alternatively, the polymer layer 34 may be a benzocyclobutane (BCB)layer having a thickness of between 3 and 25 μm on the metal trace 36and on the polymer layer 32. Alternatively, the polymer layer 34 may bean epoxy resin layer having a thickness of between 3 and 25 μm on themetal trace 36 and on the polymer layer 32. The polymer layer 34 can beformed by a spin-on coating process, a lamination process or ascreen-printing process.

After the metal bumps 22 are formed over the semiconductor wafer, asshown in FIGS. 2A-2C, 2E, 2F, 2H, 2I, 3C, 3D, 3F, 3G, 4B, 4D, 4E and 5,the semiconductor wafer can be separated into multiple individualsemiconductor chips 44, integrated circuit chips, by a laser cuttingprocess or by a mechanical cutting process. These semiconductor chips 44can be packaged using the following steps as shown in FIGS. 6A-6Y,7A-7J, 8A-8M and 9A-9L.

Below, referring to FIGS. 6A-6Y, 7A-7J, 8A-8M and 9A-9L, the scheme 38over the semiconductor substrate 2 except for the metal bump 22 may beany one of the structures shown in FIGS. 2A-2C, FIGS. 2E-2F, FIGS.2H-2I, FIGS. 3C-3D, FIGS. 3F-3G, FIG. 4B, FIGS. 4D-4E and FIG. 5 overthe semiconductor substrate 2 except for the metal bump 22; the scheme38 represents the combination of the scheme 20, the passivation layer14, the opening 14 a and the pad 16 in FIG. 2A, or the scheme 38represents the combination of the scheme 20, the passivation layer 14,the opening 14 a, the pad 16 and the metal cap 18 in FIG. 2B and FIG.2C, or the scheme 38 represents the combination of the scheme 20, thepassivation layer 14, the opening 14 a, the pad 16 and the metal trace24 in FIG. 2E, or the scheme 38 represents the combination of the scheme20, the passivation layer 14, the opening 14 a, the pad 16, the metaltrace 24, the polymer layer 26 and the opening 26 a in FIG. 2F, or thescheme 38 represents the combination of the scheme 20, the passivationlayer 14, the opening 14 a, the pad 16, the metal cap 18 and the metaltrace 24 in FIG. 2H, or the scheme 38 represents the combination of thescheme 20, the passivation layer 14, the opening 14 a, the pad 16, themetal cap 18, the metal trace 24, the polymer layer 26 and the opening26 a in FIG. 2I, or the scheme 38 represents the combination of thescheme 20, the passivation layer 14, the opening 14 a, the pad 16, thepolymer layer 28 and the opening 28 a in FIG. 3C and FIG. 3D, or thescheme 38 represents the combination of the scheme 20, the passivationlayer 14, the opening 14 a, the pad 16, the polymer layer 28, theopening 28 a and the metal trace 30 in FIG. 3F, or the scheme 38represents the combination of the scheme 20, the passivation layer 14,the opening 14 a, the pad 16, the polymer layer 28, the opening 28 a,the metal trace 30, the polymer layer 32 and the opening 32 a in FIG.3G, or the scheme 38 represents the combination of the scheme 20, thepassivation layer 14, the opening 14 a, the pad 16, the metal cap 18,the polymer layer 28 and the opening 28 a in FIG. 4B, or the scheme 38represents the combination of the scheme 20, the passivation layer 14,the opening 14 a, the pad 16, the metal cap 18, the polymer layer 28,the opening 28 a and the metal trace 30 in FIG. 4D, or the scheme 38represents the combination of the scheme 20, the passivation layer 14,the opening 14 a, the pad 16, the metal cap 18, the polymer layer 28,the opening 28 a, the metal trace 30, the polymer layer 32 and theopening 32 a in FIG. 4E, or the scheme 38 represents the combination ofthe scheme 20, the passivation layer 14, the opening 14 a, the pad 16,the metal cap 18, the polymer layer 28, the opening 28 a, the metaltrace 30, the polymer layer 32, the opening 32 a, the polymer layer 34,the opening 34 a and the metal trace 36 in FIG. 5.

Embodiment 1

Referring to FIG. 6A, a glue material 46 is first formed on multipleregions of a substrate 48 by a dispensing process to form multiple glueportions on the substrate 48. Next, multiple semiconductor chips 44 arerespectively mounted onto the glue material 46 to be adhered to thesubstrate 48, and then the glue material 46 is baked at a temperature ofbetween 100 and 200° C. In another word, the semiconductor substrate 2of the semiconductor chip 44 can be adhered to the substrate 48 usingthe glue material 46.

The material of the glue material 46 may be polymer material, such aspolyimide or epoxy resin, and the thickness of the glue material 46 isbetween 1 and 50 μm. For example, the glue material 46 may be polyimidehaving a thickness of between 1 and 50 μm. Alternatively, the gluematerial 46 may be epoxy resin having a thickness of between 1 and 50μm. Therefore, the semiconductor chips 44 can be adhered to thesubstrate 48 using polyimide. Alternatively, the semiconductor chips 44can be adhered to the substrate 48 using epoxy resin.

Referring to FIG. 6B, multiple cavities 50 may be formed in thesubstrate 48 using a mechanical drilling process, a laser drillingprocess or an etching process. Next, a glue material 46 can be formed onthe surfaces of the cavities 50 in the substrate 48 by a dispensingprocess to form multiple glue portions in the cavities 50. Next,multiple semiconductor chips 44 are respectively mounted onto the glueportions 46 in the cavities 50 to be adhered to the surfaces of thecavities 50 in the substrate 48, and then the glue material 46 is bakedat a temperature of between 100 and 200° C. In another word, thesemiconductor substrate 2 of the semiconductor chip 44 can be adhered tothe surfaces of the cavities 50 in the substrate 48 using the gluematerial 46. Therefore, the semiconductor chips 44 can be adhered to thesurfaces of the cavities 50 in the substrate 48 using polyimide.Alternatively, the semiconductor chips 44 can be adhered to the surfacesof the cavities 50 in the substrate 48 using epoxy resin.

In FIGS. 6A and 6B, the substrate 48 may be a ball grid array (BGA)substrate with a thickness of between 200 and 2,000 μm. Alternatively,the substrate 48 may be a glass fiber reinforced epoxy based substratewith a thickness of between 200 and 2,000 μm. Alternatively, thesubstrate 48 may be a glass substrate with a thickness of between 200and 2,000 μm. Alternatively, the substrate 48 may be a silicon substratewith a thickness of between 200 and 2,000 μm. Alternatively, thesubstrate 48 may be a ceramic substrate with a thickness of between 200and 2,000 μm. Alternatively, the substrate 48 may be an organicsubstrate with a thickness of between 200 and 2,000 μm. Alternatively,the substrate 48 may be a metal substrate, comprising aluminum, with athickness of between 200 and 2,000 μm. Alternatively, the substrate 48may be a metal substrate, comprising copper, with a thickness of between200 and 2,000 μm. The substrate 48 may have no metal trace in thesubstrate 48, but may have a function for carrying the semiconductorchips 44. When the substrate 48 is a metal substrate, the substrate 48can be regarded as a heat sink.

Referring to FIG. 6C, a polymer material 52 having a thickness t5 ofbetween 250 and 1,000 μm is formed on the substrate 48, on thesemiconductor chips 44 and enclosing the metal bumps 22 of thesemiconductor chips 44. The polymer material 52 can be formed by moldingbenzocyclobutane (BCB), polyimide (PI) or an epoxy-based material, bydispensing benzocyclobutane (BCB), polyimide (PI) or an epoxy-basedmaterial, by coating benzocyclobutane (BCB), polyimide (PI) or anepoxy-based material, by printing benzocyclobutane (BCB), polyimide (PI)or an epoxy-based material, or by laminating benzocyclobutane (BCB),polyimide (PI) or an epoxy-based material.

For example, the polymer material 52 can be formed by molding anepoxy-based material having a thickness t5 of between 250 and 1,000 μmon the substrate 48, on the semiconductor chips 44 and enclosing any oneof the above-mentioned kinds of metal bump 22 as illustrated in FIGS.2A-2I, 2A-a through 2A-g, in FIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5.Alternatively, the polymer material 52 can be formed by moldingpolyimide or benzocyclobutane having a thickness t5 of between 250 and1,000 μm on the substrate 48, on the semiconductor chips 44 andenclosing any one of the above-mentioned kinds of metal bump 22 asillustrated in FIGS. 2A-2I, 2A-a through 2A-g, in FIGS. 3A-3G, in FIGS.4A-4E and in FIG. 5.

For example, the polymer material 52 can be formed by dispensingpolyimide or benzocyclobutane having a thickness t5 of between 250 and1,000 μm on the substrate 48, on the semiconductor chips 44 andenclosing any one of the above-mentioned kinds of metal bump 22 asillustrated in FIGS. 2A-2I, 2A-a through 2A-g, in FIGS. 3A-3G, in FIGS.4A-4E and in FIG. 5.

Referring to FIG. 6D, a top surface of the polymer material 52 ispolished to uncover a top surface of the metal bump 22 and to planarizea top surface of the polymer material 52, preferably by a mechanicalpolishing process. Alternatively, the top surface of the polymermaterial 52 is polished by a chemical mechanical polishing (CMP)process. When the polymer material 52 is being polished, the top portionof the metal bump 22 is allowed to be removed such that the metal bump22, after being polished, may have a thickness t6 between 10 and 30microns.

Next, referring to FIG. 6E, a metal layer 54 can be sputtered on thepolymer material 52 and on a top surface of the metal bump 22.Alternatively, the metal layer 54 may be formed by an electrolessplating process. The metal layer 54 can be formed of an adhesion/barrierlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on the top surface of the metal bump 22, and a seedlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the adhesion/barrier layer. Alternatively, themetal layer 54 can be formed of a seed layer having a thickness ofbetween 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thepolymer material 52 and on the top surface of the metal bump 22. Thematerial of the adhesion/barrier layer may include titanium, atitanium-tungsten alloy, titanium nitride, chromium, or tantalumnitride. The material of the seed layer may include gold, copper orsilver.

For example, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed gold layer of the metal bump 22, and thensputtering a gold layer having a thickness of between 0.05 and 2 μm, andpreferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed copper layer of the metal bump 22, andthen sputtering a gold layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed silver layer of the metal bump 22, andthen sputtering a gold layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed nickel layer of the metal bump 22, andthen sputtering a gold layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.

For example, the metal layer 54 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the polymer material 52 and on an exposed gold layer of the metalbump 22, and then sputtering a gold layer having a thickness of between0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thetitanium-tungsten-alloy layer. Alternatively, the metal layer 54 can beformed by sputtering a titanium-tungsten-alloy layer having a thicknessof between 0.03 and 1 μm on the polymer material 52 and on an exposedcopper layer of the metal bump 22, and then sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-tungsten-alloy layer. Alternatively, themetal layer 54 can be formed by sputtering a titanium-tungsten-alloylayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed silver layer of the metal bump 22, andthen sputtering a gold layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on thetitanium-tungsten-alloy layer. Alternatively, the metal layer 54 can beformed by sputtering a titanium-tungsten-alloy layer having a thicknessof between 0.03 and 1 μm on the polymer material 52 and on an exposednickel layer of the metal bump 22, and then sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-tungsten-alloy layer.

For example, the metal layer 54 can be formed by sputtering atitanium-nitride layer having a thickness of between 0.03 and 1 μm onthe polymer material 52 and on an exposed gold layer of the metal bump22, and then sputtering a gold layer having a thickness of between 0.05and 2 μm, and preferably of between 0.1 and 1 μm, on thetitanium-nitride layer. Alternatively, the metal layer 54 can be formedby sputtering a titanium-nitride layer having a thickness of between0.03 and 1 μm on the polymer material 52 and on an exposed copper layerof the metal bump 22, and then sputtering a gold layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the titanium-nitride layer. Alternatively, the metal layer 54 canbe formed by sputtering a titanium-nitride layer having a thickness ofbetween 0.03 and 1 μm on the polymer material 52 and on an exposedsilver layer of the metal bump 22, and then sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-nitride layer. Alternatively, the metallayer 54 can be formed by sputtering a titanium-nitride layer having athickness of between 0.03 and 1 μm on the polymer material 52 and on anexposed nickel layer of the metal bump 22, and then sputtering a goldlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the titanium-nitride layer.

For example, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed gold layer of the metal bump 22, and thensputtering a gold layer having a thickness of between 0.05 and 2 μm, andpreferably of between 0.1 and 1 μm, on the chromium layer.Alternatively, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed copper layer of the metal bump 22comprising copper, and then sputtering a gold layer having a thicknessof between 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thechromium layer. Alternatively, the metal layer 54 can be formed bysputtering a chromium layer having a thickness of between 0.03 and 1 μmon the polymer material 52 and on an exposed silver layer of the metalbump 22, and then sputtering a gold layer having a thickness of between0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on the chromiumlayer. Alternatively, the metal layer 54 can be formed by sputtering achromium layer having a thickness of between 0.03 and 1 μm on thepolymer material 52 and on an exposed nickel layer of the metal bump 22,and then sputtering a gold layer having a thickness of between 0.05 and2 μm, and preferably of between 0.1 and 1 μm, on the chromium layer.

For example, the metal layer 54 can be formed by sputtering atantalum-nitride layer having a thickness of between 0.03 and 1 μm onthe polymer material 52 and on an exposed gold layer of the metal bump22, and then sputtering a gold layer having a thickness of between 0.05and 2 μm, and preferably of between 0.1 and 1 μm, on thetantalum-nitride layer. Alternatively, the metal layer 54 can be formedby sputtering a tantalum-nitride layer having a thickness of between0.03 and 1 μm on the polymer material 52 and on an exposed copper layerof the metal bump 22, and then sputtering a gold layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the tantalum-nitride layer. Alternatively, the metal layer 54 canbe formed by sputtering a tantalum-nitride layer having a thickness ofbetween 0.03 and 1 μm on the polymer material 52 and on an exposedsilver layer of the metal bump 22 comprising silver, and then sputteringa gold layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the tantalum-nitride layer. Alternatively,the metal layer 54 can be formed by sputtering a tantalum-nitride layerhaving a thickness of between 0.03 and 1 μm on the polymer material 52and on an exposed nickel layer of the metal bump 22, and then sputteringa gold layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the tantalum-nitride layer.

For example, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed gold layer of the metal bump 22, and thensputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed copper layer of the metal bump 22, andthen sputtering a copper layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed silver layer of the metal bump 22, andthen sputtering a copper layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed nickel layer of the metal bump 22, andthen sputtering a copper layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.

For example, the metal layer 54 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the polymer material 52 and on an exposed gold layer of the metalbump 22, and then sputtering a copper layer having a thickness ofbetween 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thetitanium-tungsten-alloy layer. Alternatively, the metal layer 54 can beformed by sputtering a titanium-tungsten-alloy layer having a thicknessof between 0.03 and 1 μm on the polymer material 52 and on an exposedcopper layer of the metal bump 22, and then sputtering a copper layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-tungsten-alloy layer. Alternatively, themetal layer 54 can be formed by sputtering a titanium-tungsten-alloylayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed silver layer of the metal bump 22, andthen sputtering a copper layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on thetitanium-tungsten-alloy layer. Alternatively, the metal layer 54 can beformed by sputtering a titanium-tungsten-alloy layer having a thicknessof between 0.03 and 1 μm on the polymer material 52 and on an exposednickel layer of the metal bump 22, and then sputtering a copper layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-tungsten-alloy layer.

For example, the metal layer 54 can be formed by sputtering atitanium-nitride layer having a thickness of between 0.03 and 1 μm onthe polymer material 52 and on an exposed gold layer of the metal bump22 comprising gold, and then sputtering a copper layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the titanium-nitride layer. Alternatively, the metal layer 54 canbe formed by sputtering a titanium-nitride layer having a thickness ofbetween 0.03 and 1 μm on the polymer material 52 and on an exposedcopper layer of the metal bump 22, and then sputtering a copper layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-nitride layer. Alternatively, the metallayer 54 can be formed by sputtering a titanium-nitride layer having athickness of between 0.03 and 1 μm on the polymer material 52 and on anexposed silver layer of the metal bump 22, and then sputtering a copperlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the titanium-nitride layer. Alternatively, themetal layer 54 can be formed by sputtering a titanium-nitride layerhaving a thickness of between 0.03 and 1 μm on the polymer material 52and on an exposed nickel layer of the metal bump 22, and then sputteringa copper layer having a thickness of between 0.05 and 2 μm, andpreferably of between 0.1 and 1 μm, on the titanium-nitride layer.

For example, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed gold layer of the metal bump 22, and thensputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the chromium layer.Alternatively, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed copper layer of the metal bump 22, andthen sputtering a copper layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the chromium layer.Alternatively, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed silver layer of the metal bump 22, andthen sputtering a copper layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the chromium layer.Alternatively, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed nickel layer of the metal bump 22, andthen sputtering a copper layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the chromium layer.

For example, the metal layer 54 can be formed by sputtering atantalum-nitride layer having a thickness of between 0.03 and 1 μm onthe polymer material 52 and on an exposed gold layer of the metal bump22, and then sputtering a copper layer having a thickness of between0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thetantalum-nitride layer. Alternatively, the metal layer 54 can be formedby sputtering a tantalum-nitride layer having a thickness of between0.03 and 1 μm on the polymer material 52 and on an exposed copper layerof the metal bump 22, and then sputtering a copper layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the tantalum-nitride layer. Alternatively, the metal layer 54 canbe formed by sputtering a tantalum-nitride layer having a thickness ofbetween 0.03 and 1 μm on the polymer material 52 and on an exposedsilver layer of the metal bump 22, and then sputtering a copper layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the tantalum-nitride layer. Alternatively, the metallayer 54 can be formed by sputtering a tantalum-nitride layer having athickness of between 0.03 and 1 μm on the polymer material 52 and on anexposed nickel layer of the metal bump 22, and then sputtering a copperlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the tantalum-nitride layer.

For example, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed gold layer of the metal bump 22, and thensputtering a silver layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed copper layer of the metal bump 22, andthen sputtering a silver layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed silver layer of the metal bump 22, andthen sputtering a silver layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 54 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed nickel layer of the metal bump 22, andthen sputtering a silver layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.

For example, the metal layer 54 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the polymer material 52 and on an exposed gold layer of the metalbump 22, and then sputtering a silver layer having a thickness ofbetween 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thetitanium-tungsten-alloy layer. Alternatively, the metal layer 54 can beformed by sputtering a titanium-tungsten-alloy layer having a thicknessof between 0.03 and 1 μm on the polymer material 52 and on an exposedcopper layer of the metal bump 22, and then sputtering a silver layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-tungsten-alloy layer. Alternatively, themetal layer 54 can be formed by sputtering a titanium-tungsten-alloylayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed silver layer of the metal bump 22, andthen sputtering a silver layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on thetitanium-tungsten-alloy layer. Alternatively, the metal layer 54 can beformed by sputtering a titanium-tungsten-alloy layer having a thicknessof between 0.03 and 1 μm on the polymer material 52 and on an exposednickel layer of the metal bump 22, and then sputtering a silver layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-tungsten-alloy layer.

For example, the metal layer 54 can be formed by sputtering atitanium-nitride layer having a thickness of between 0.03 and 1 μm onthe polymer material 52 and on an exposed gold layer of the metal bump22, and then sputtering a silver layer having a thickness of between0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thetitanium-nitride layer. Alternatively, the metal layer 54 can be formedby sputtering a titanium-nitride layer having a thickness of between0.03 and 1 μm on the polymer material 52 and on an exposed copper layerof the metal bump 22, and then sputtering a silver layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the titanium-nitride layer. Alternatively, the metal layer 54 canbe formed by sputtering a titanium-nitride layer having a thickness ofbetween 0.03 and 1 μm on the polymer material 52 and on an exposedsilver layer of the metal bump 22, and then sputtering a silver layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-nitride layer. Alternatively, the metallayer 54 can be formed by sputtering a titanium-nitride layer having athickness of between 0.03 and 1 μm on the polymer material 52 and on anexposed nickel layer of the metal bump 22, and then sputtering a silverlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the titanium-nitride layer.

For example, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed gold layer of the metal bump 22, and thensputtering a silver layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the chromium layer.Alternatively, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed copper layer of the metal bump 22, andthen sputtering a silver layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1; m, on the chromium layer.Alternatively, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed silver layer of the metal bump 22, andthen sputtering a silver layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the chromium layer.Alternatively, the metal layer 54 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the polymermaterial 52 and on an exposed nickel layer of the metal bump 22, andthen sputtering a silver layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the chromium layer.

For example, the metal layer 54 can be formed by sputtering atantalum-nitride layer having a thickness of between 0.03 and 1 μm onthe polymer material 52 and on an exposed gold layer of the metal bump22, and then sputtering a silver layer having a thickness of between0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thetantalum-nitride layer. Alternatively, the metal layer 54 can be formedby sputtering a tantalum-nitride layer having a thickness of between0.03 and 1 μm on the polymer material 52 and on an exposed copper layerof the metal bump 22, and then sputtering a silver layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the tantalum-nitride layer. Alternatively, the metal layer 54 canbe formed by sputtering a tantalum-nitride layer having a thickness ofbetween 0.03 and 1 μm on the polymer material 52 and on an exposedsilver layer of the metal bump 22, and then sputtering a silver layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the tantalum-nitride layer. Alternatively, the metallayer 54 can be formed by sputtering a tantalum-nitride layer having athickness of between 0.03 and 1 μm on the polymer material 52 and on anexposed nickel layer of the metal bump 22, and then sputtering a silverlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the tantalum-nitride layer.

For example, the metal layer 54 can be formed by sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the polymer material 52 and on an exposed gold layer ofthe metal bump 22. Alternatively, the metal layer 54 can be formed bysputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the polymer material 52 andon an exposed gold layer of the metal bump 22. Alternatively, the metallayer 54 can be formed by sputtering a silver layer having a thicknessof between 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thepolymer material 52 and on an exposed gold layer of the metal bump 22.

For example, the metal layer 54 can be formed by sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the polymer material 52 and on an exposed copper layerof the metal bump 22. Alternatively, the metal layer 54 can be formed bysputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the polymer material 52 andon an exposed copper layer of the metal bump 22. Alternatively, themetal layer 54 can be formed by sputtering a silver layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the polymer material 52 and on an exposed copper layer of themetal bump 22.

For example, the metal layer 54 can be formed by sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the polymer material 52 and on an exposed nickel layerof the metal bump 22. Alternatively, the metal layer 54 can be formed bysputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the polymer material 52 andon an exposed nickel layer of the metal bump 22. Alternatively, themetal layer 54 can be formed by sputtering a silver layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the polymer material 52 and on an exposed nickel layer of themetal bump 22.

Next, referring to FIG. 6F, a photoresist layer 56, such as positivetype photoresist or negative type photoresist, having a thickness ofbetween 10 and 120 μm is formed on the metal layer 54 via a coatingprocess, a spraying process or a lamination process. Referring to FIG.6G, the photoresist layer 56 is patterned with the processes ofexposure, development, etc., to form an opening 56 a in the photoresistlayer 56 exposing the metal layer 54. A 1× stepper or 1× contact alignercan be used to expose the photoresist layer 56 during the process ofexposure. However, some residuals from the photoresist layer 56 couldremain on the metal layer 54 exposed by the opening 56 a. Thereafter,the residuals can be removed from the metal layer 54 exposed by theopening 56 a with a plasma, such as O₂ plasma or plasma containingfluorine of below 200 PPM and oxygen.

For example, the photoresist layer 56 can be formed by coating apositive-type photosensitive polymer layer having a thickness of between5 and 150 μm, and preferably of between 20 and 50 μm, on theabove-mentioned copper layer, gold layer or silver layer of the metallayer 54, then exposing the photosensitive polymer layer using a 1×stepper or 1× contact aligner with at least two of G-line having awavelength ranging from 434 to 438 nm, H-line having a wavelengthranging from 403 to 407 nm, and Mine having a wavelength ranging from363 to 367 nm, illuminating the photosensitive polymer layer, that is,G-line and H-line, G-line and Mine, H-line and I-line, or G-line, H-lineand I-line illuminate the photosensitive polymer layer, then developingthe exposed polymer layer, and then removing the residual polymericmaterial or other contaminants on the metal layer 54 with an O₂ plasmaor a plasma containing fluorine of below 200 PPM and oxygen, such thatthe photoresist layer 56 can be patterned with an opening 56 a in thephotoresist layer 56 exposing the metal layer 54.

For example, the photoresist layer 56 can be formed by coating apositive type photoresist on the above-mentioned gold layer of the metallayer 54, and then patterning the positive type photoresist with theprocesses of exposure, development, etc., to form an opening in thepositive type photoresist exposing the above-mentioned gold layer of themetal layer 54. Alternatively, the photoresist layer 56 can be formed bycoating a positive type photoresist on the above-mentioned copper layerof the metal layer 54, and then patterning the positive type photoresistwith the processes of exposure, development, etc., to form an opening inthe positive type photoresist exposing the above-mentioned copper layerof the metal layer 54. Alternatively, the photoresist layer 56 can beformed by laminating a positive type photoresist on the above-mentionedgold layer of the metal layer 54, and then patterning the positive typephotoresist with the processes of exposure, development, etc., to forman opening in the positive type photoresist exposing the above-mentionedgold layer of the metal layer 54. Alternatively, the photoresist layer56 can be formed by laminating a positive type photoresist on theabove-mentioned copper layer of the metal layer 54, and then patterningthe positive type photoresist with the processes of exposure,development, etc., to form an opening in the positive type photoresistexposing the above-mentioned copper layer of the metal layer 54.

Referring to FIG. 6H, a metal layer 58 having a thickness of between 5and 100 μm, and preferably of between 10 and 30 μm, is electroplated onthe metal layer 54 exposed by the opening 56 a. The material of themetal layer 58 may include gold, copper, silver or nickel. For example,the metal layer 58 can be formed by electroplating a gold layer having athickness of between 5 and 100 μm, and preferably of between 10 and 30μm, on the gold layer of the metal layer 54 exposed by the opening 56 a.Alternatively, the metal layer 58 can be formed by electroplating acopper layer having a thickness of between 5 and 100 μm, and preferablyof between 10 and 30 μm, on the copper layer of the metal layer 54exposed by the opening 56 a. Alternatively, the metal layer 58 can beformed by electroplating a silver layer having a thickness of between 5and 100 μm, and preferably of between 10 and 30 μm, on the silver layerof the metal layer 54 exposed by the opening 56 a. Alternatively, themetal layer 58 can be formed by electroplating a copper layer having athickness of between 5 and 100 μm, and preferably of between 10 and 30μm, on the copper layer of the metal layer 54 exposed by the opening 56a, and then electroplating a nickel layer having a thickness of between1 and 10 microns on the electroplated copper layer in the opening 56 a,wherein the thickness of the electroplated copper layer, in the opening56 a, plus the nickel layer is between 5 and 100 μm, and preferably ofbetween 10 and 30 μm. Alternatively, the metal layer 58 can be formed byelectroplating a copper layer having a thickness of between 5 and 100μm, and preferably of between 10 and 30 μm, on the copper layer of themetal layer 54 exposed by the opening 56 a, then electroplating a nickellayer having a thickness of between 1 and 10 microns on theelectroplated copper layer in the opening 56 a, and then electroplatinga gold layer having a thickness of between 0.5 and 5 microns on thenickel in the opening 56 a, wherein the thickness of the electroplatedcopper layer, in the opening 56 a, the nickel layer and the gold layeris between 5 and 100 μm, and preferably of between 10 and 30 μm.

Next, referring to FIG. 6I, after the metal layer 58 is formed, most ofthe photoresist layer 56 can be removed using an organic solution withamide. However, some residuals from the photoresist layer 56 couldremain on the metal layer 58 and on the metal layer 54. Thereafter, theresiduals can be removed from the metal layer 58 and from the metallayer 54 with a plasma, such as O₂ plasma or plasma containing fluorineof below 200 PPM and oxygen.

Next, referring to FIG. 6J, the metal layer 54 not under the metal layer58 is removed with a dry etching method or a wet etching method. As tothe wet etching method, when the metal layer 54 comprises atitanium-tungsten-alloy layer, the titanium-tungsten-alloy layer can beetched with a solution containing hydrogen peroxide; when the metallayer 54 comprises a titanium layer, the titanium layer can be etchedwith a solution containing hydrogen fluoride; when the metal layer 54comprises a gold layer, the gold layer can be etched with aniodine-containing solution, such as solution containing potassiumiodide; when the metal layer 54 comprises a copper layer, the copperlayer can be etched with a solution containing NH4OH. As to the dryetching method, when the metal layer 54 comprises a titanium layer or atitanium-tungsten-alloy layer, the titanium layer or thetitanium-tungsten-alloy layer can be etched with a chlorine-containingplasma etching process or with an RIE process; when the metal layer 54comprises is a gold layer, the gold layer can be removed with an ionmilling process or with an Ar sputtering etching process. Generally, thedry etching method to etch the metal layer 54 not under the metal layer58 may include a chemical plasma etching process, a sputtering etchingprocess, such as argon sputter process, or a chemical vapor etchingprocess.

Thereby, in this embodiment, a patterned circuit layer 60 can be formedon the polymer material 52 and on a top surface of the metal bump 22.The patterned circuit layer 60 can be formed of the metal layer 54 andthe electroplated metal layer 58 on the metal layer 54.

Next, referring to FIG. 6K, an insulating layer 62 having a thickness ofbetween 15 and 150 μm can be formed on the polymer material 52 and onthe patterned circuit layer 60 via a coating process, a spraying processor a lamination process. The material of the insulating layer 62 may bepolymer material, such as epoxy resin, benzocyclobutene (BCB) orpolyimide. Next, referring to FIG. 6L, the insulating layer 62 ispatterned with a laser drill process or the processes of exposure,development, etc., to form an opening 62 a in the insulating layer 62exposing the patterned circuit layer 60. For example, the insulatinglayer 62 can be formed by coating or laminating an epoxy resin layerhaving a thickness of between 15 and 150 μm on the polymer material 52and on the patterned circuit layer 60, and then patterning the epoxyresin layer with a laser drill process to form an opening in the epoxyresin layer exposing the patterned circuit layer 60. Alternatively, theinsulating layer 62 can be formed by coating or laminating a photosensitive epoxy resin layer having a thickness of between 15 and 150 μmon the polymer material 52 and on the patterned circuit layer 60, andthen patterning the photo sensitive epoxy resin layer with the processesof exposure, development, etc., to form an opening in the epoxy resinlayer exposing the patterned circuit layer 60.

However, some residuals from the insulating layer 62 could remain on thepatterned circuit layer 60 exposed by the opening 62 a. Thereafter, theresiduals can be removed from the patterned circuit layer 60 exposed bythe opening 62 a with a plasma, such as O₂ plasma or plasma containingfluorine of below 200 PPM and oxygen.

Next, referring to FIG. 6M, a tin-containing ball 64 with a diameter ofbetween 0.25 and 1.2 mm is formed over the patterned circuit layer 60exposed by the opening 62 a and connected to the patterned circuit layer60 through the opening 62 a. For example, a nickel layer having athickness of between 0.05 and 5 microns can be electroless plated on thecopper layer of the patterned circuit layer 60 exposed by the opening 62a; next, a gold layer having a thickness of between 0.05 and 2 micronsis electroless plated on the nickel layer; and next, the tin-containingball 64 is planted on the gold layer. Alternatively, the tin-containingball 64 may be formed by planting a tin-lead-alloy ball on the goldlayer of the patterned circuit layer 60 exposed by the opening 62 a at atemperature of between 180 and 190° C. Alternatively, the tin-containingball 64 can be formed by screen printing a tin-lead alloy on the goldlayer of the patterned circuit layer 60 exposed by the opening 62 a, andthen heating or reflowing the tin-lead alloy at a temperature of between180 and 190° C. Alternatively, the tin-containing ball 64 may be formedby planting a lead-free ball, such as tin-silver alloy ortin-silver-copper alloy, on the gold layer of the patterned circuitlayer 60 exposed by the opening 62 a at a temperature of between 200 and250° C. Alternatively, the tin-containing ball 64 can be formed byscreen printing a lead-free alloy, such as tin-silver alloy ortin-silver-copper alloy, on the gold layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then heating or reflowing thelead-free alloy at a temperature of between 200 and 250° C.

Alternatively, the tin-containing ball 64 may be formed by planting atin-lead-alloy ball on the copper layer of the patterned circuit layer60 exposed by the opening 62 a at a temperature of between 180 and 190°C. Alternatively, the tin-containing ball 64 can be formed by screenprinting a tin-lead alloy on the copper layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then heating or reflowing thetin-lead alloy at a temperature of between 180 and 190° C.Alternatively, the tin-containing ball 64 may be formed by planting alead-free ball, such as tin-silver alloy or tin-silver-copper alloy, onthe copper layer of the patterned circuit layer 60 exposed by theopening 62 a at a temperature of between 200 and 250° C. Alternatively,the tin-containing ball 64 can be formed by screen printing a lead-freealloy, such as tin-silver alloy or tin-silver-copper alloy, on thecopper layer of the patterned circuit layer 60 exposed by the opening 62a, and then heating or reflowing the lead-free alloy at a temperature ofbetween 200 and 250° C.

Referring to FIG. 6N, after the tin-containing ball 64 is formed, thesubstrate 48, the polymer material 52 and the insulating layer 62 can becuffed into a plurality of chip packages 66 using a mechanical cuttingprocess or using a laser cutting process.

In this embodiment, multiple patterned circuit layers and multipleinsulating layers can be formed over the polymer material 52, whereinone of the insulating layers is between the neighboring two of thepatterned circuit layers. These patterned circuit layers are connectedto each other through multiple metal vias in the insulating layers. Thetin-containing ball 64 can be formed over the topmost one of thepatterned circuit layers, and the bottommost one of the patternedcircuit layers can be connected to the metal bump 22. The followingexample is described for forming two patterned circuit layers. More thantwo patterned circuit layers can be referred to the following example.

Referring to FIG. 6O, after the step shown in FIG. 6L, a metal layer 68can be sputtered on the insulating layer 62 and on the patterned circuitlayer 60 exposed by the opening 62 a. Alternatively, the metal layer 68may be formed by an electroless plating process. The metal layer 68 canbe formed of an adhesion/barrier layer having a thickness of between0.03 and 1 μm on the insulating layer 62 and on the patterned circuitlayer 60 exposed by the opening 62 a, and a seed layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the adhesion/barrier layer. Alternatively, the metal layer 68 canbe formed of a seed layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the insulating layer 62 andon the patterned circuit layer 60 exposed by the opening 62 a. Thematerial of the adhesion/barrier layer may include titanium, atitanium-tungsten alloy, titanium nitride, chromium, or tantalumnitride. The material of the seed layer may include gold, copper orsilver.

For example, the metal layer 68 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the gold layer of the patterned circuit layer 60 exposedby the opening 62 a, and then sputtering a gold layer having a thicknessof between 0.05 and 2 μm, and preferably of between 0.1 and 1 μm on thetitanium layer. Alternatively, the metal layer 68 can be formed bysputtering a titanium layer having a thickness of between 0.03 and 1 μmon the insulating layer 62 and on the copper layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering a goldlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the titanium layer. Alternatively, the metallayer 68 can be formed by sputtering a titanium layer having a thicknessof between 0.03 and 1 μm on the insulating layer 62 and on the silverlayer of the patterned circuit layer 60 exposed by the opening 62 a, andthen sputtering a gold layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 68 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the nickel layer of the patterned circuit layer 60exposed by the opening 62 a, and then sputtering a gold layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the titanium layer.

For example, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the gold layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering a goldlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the titanium-tungsten-alloy layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the copper layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering a goldlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the titanium-tungsten-alloy layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the silver layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering a goldlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the titanium-tungsten-alloy layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the nickel layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering a goldlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the titanium-tungsten-alloy layer.

For example, the metal layer 68 can be formed by sputtering atitanium-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the gold layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-nitride layer. Alternatively, the metallayer 68 can be formed by sputtering a titanium-nitride layer having athickness of between 0.03 and 1 μm on the insulating layer 62 and on thecopper layer of the patterned circuit layer 60 exposed by the opening 62a, and then sputtering a gold layer having a thickness of between 0.05and 2 μm, and preferably of between 0.1 and 1 μm, on thetitanium-nitride layer. Alternatively, the metal layer 68 can be formedby sputtering a titanium-nitride layer having a thickness of between0.03 and 1 μm on the insulating layer 62 and on the silver layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a gold layer having a thickness of between 0.05 and 2 μm, andpreferably of between 0.1 and 1 μm, on the titanium-nitride layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the nickel layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-nitride layer.

For example, the metal layer 68 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the gold layer of the patterned circuit layer 60 exposedby the opening 62 a, and then sputtering a gold layer having a thicknessof between 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on thechromium layer. Alternatively, the metal layer 68 can be formed bysputtering a chromium layer having a thickness of between 0.03 and 1 μmon the insulating layer 62 and on the copper layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering a goldlayer having a thickness of between 0.05 and 2 μm, and preferably ofbetween 0.1 and 1 μm, on the chromium layer. Alternatively, the metallayer 68 can be formed by sputtering a chromium layer having a thicknessof between 0.03 and 1 μm on the insulating layer 62 and on the silverlayer of the patterned circuit layer 60 exposed by the opening 62 a, andthen sputtering a gold layer having a thickness of between 0.05 and 2μm, and preferably of between 0.1 and 1 μm, on the chromium layer.Alternatively, the metal layer 68 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the nickel layer of the patterned circuit layer 60exposed by the opening 62 a, and then sputtering a gold layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the chromium layer.

For example, the metal layer 68 can be formed by sputtering atantalum-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the gold layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the tantalum-nitride layer. Alternatively, the metallayer 68 can be formed by sputtering a tantalum-nitride layer having athickness of between 0.03 and 1 μm on the insulating layer 62 and on thecopper layer of the patterned circuit layer 60 exposed by the opening 62a, and then sputtering a gold layer having a thickness of between 0.05and 2 μm, and preferably of between 0.1 and 1 μm, on thetantalum-nitride layer. Alternatively, the metal layer 68 can be formedby sputtering a tantalum-nitride layer having a thickness of between0.03 and 1 μm on the insulating layer 62 and on the silver layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a gold layer having a thickness of between 0.05 and 2 μm, andpreferably of between 0.1 and 1 μm, on the tantalum-nitride layer.Alternatively, the metal layer 68 can be formed by sputtering atantalum-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the nickel layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the tantalum-nitride layer.

For example, the metal layer 68 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the gold layer of the patterned circuit layer 60 exposedby the opening 62 a, and then sputtering a silver layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm on the titanium layer. Alternatively, the metal layer 68 can beformed by sputtering a titanium layer having a thickness of between 0.03and 1 μm on the insulating layer 62 and on the copper layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a silver layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 68 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the silver layer of the patterned circuit layer 60exposed by the opening 62 a, and then sputtering a silver layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the titanium layer. Alternatively, the metal layer 68 can beformed by sputtering a titanium layer having a thickness of between 0.03and 1 μm on the insulating layer 62 and on the nickel layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a silver layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the titanium layer.

For example, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the gold layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering asilver layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the titanium-tungsten-alloy layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the copper layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering asilver layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the titanium-tungsten-alloy layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the silver layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering asilver layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the titanium-tungsten-alloy layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the nickel layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering asilver layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the titanium-tungsten-alloy layer.

For example, the metal layer 68 can be formed by sputtering atitanium-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the gold layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a silver layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-nitride layer. Alternatively, the metallayer 68 can be formed by sputtering a titanium-nitride layer having athickness of between 0.03 and 1 μm on the insulating layer 62 and on thecopper layer of the patterned circuit layer 60 exposed by the opening 62a, and then sputtering a silver layer having a thickness of between 0.05and 2 μm, and preferably of between 0.1 and 1 μm, on thetitanium-nitride layer. Alternatively, the metal layer 68 can be formedby sputtering a titanium-nitride layer having a thickness of between0.03 and 1 μm on the insulating layer 62 and on the silver layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a silver layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the titanium-nitride layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the nickel layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a silver layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-nitride layer.

For example, the metal layer 68 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the gold layer of the patterned circuit layer 60 exposedby the opening 62 a, and then sputtering a silver layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the chromium layer. Alternatively, the metal layer 68 can beformed by sputtering a chromium layer having a thickness of between 0.03and 1 μm on the insulating layer 62 and on the copper layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a silver layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the chromium layer.Alternatively, the metal layer 68 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the silver layer of the patterned circuit layer 60exposed by the opening 62 a, and then sputtering a silver layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the chromium layer. Alternatively, the metal layer 68 can beformed by sputtering a chromium layer having a thickness of between 0.03and 1 μm on the insulating layer 62 and on the nickel layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a silver layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the chromium layer.

For example, the metal layer 68 can be formed by sputtering atantalum-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the gold layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a silver layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the tantalum-nitride layer. Alternatively, the metallayer 68 can be formed by sputtering a tantalum-nitride layer having athickness of between 0.03 and 1 μm on the insulating layer 62 and on thecopper layer of the patterned circuit layer 60 exposed by the opening 62a, and then sputtering a silver layer having a thickness of between 0.05and 2 μm, and preferably of between 0.1 and 1 μm, on thetantalum-nitride layer. Alternatively, the metal layer 68 can be formedby sputtering a tantalum-nitride layer having a thickness of between0.03 and 1 μm on the insulating layer 62 and on the silver layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a silver layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the tantalum-nitride layer.Alternatively, the metal layer 68 can be formed by sputtering atantalum-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the nickel layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a silver layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the tantalum-nitride layer.

For example, the metal layer 68 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the gold layer of the patterned circuit layer 60 exposedby the opening 62 a, and then sputtering a copper layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm on the titanium layer. Alternatively, the metal layer 68 can beformed by sputtering a titanium layer having a thickness of between 0.03and 1 μm on the insulating layer 62 and on the copper layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the titanium layer.Alternatively, the metal layer 68 can be formed by sputtering a titaniumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the silver layer of the patterned circuit layer 60exposed by the opening 62 a, and then sputtering a copper layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the titanium layer. Alternatively, the metal layer 68 can beformed by sputtering a titanium layer having a thickness of between 0.03and 1 μm on the insulating layer 62 and on the nickel layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the titanium layer.

For example, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the gold layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering acopper layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the titanium-tungsten-alloy layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the copper layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering acopper layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the titanium-tungsten-alloy layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the silver layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering acopper layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the titanium-tungsten-alloy layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-tungsten-alloy layer having a thickness of between 0.03 and 1μm on the insulating layer 62 and on the nickel layer of the patternedcircuit layer 60 exposed by the opening 62 a, and then sputtering acopper layer having a thickness of between 0.05 and 2 μm, and preferablyof between 0.1 and 1 μm, on the titanium-tungsten-alloy layer.

For example, the metal layer 68 can be formed by sputtering atitanium-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the gold layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a copper layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-nitride layer. Alternatively, the metallayer 68 can be formed by sputtering a titanium-nitride layer having athickness of between 0.03 and 1 μm on the insulating layer 62 and on thecopper layer of the patterned circuit layer 60 exposed by the opening 62a, and then sputtering a copper layer having a thickness of between 0.05and 2 μm, and preferably of between 0.1 and 1 μm, on thetitanium-nitride layer. Alternatively, the metal layer 68 can be formedby sputtering a titanium-nitride layer having a thickness of between0.03 and 1 μm on the insulating layer 62 and on the silver layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the titanium-nitride layer.Alternatively, the metal layer 68 can be formed by sputtering atitanium-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the nickel layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a copper layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the titanium-nitride layer.

For example, the metal layer 68 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the gold layer of the patterned circuit layer 60 exposedby the opening 62 a, and then sputtering a copper layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the chromium layer. Alternatively, the metal layer 68 can beformed by sputtering a chromium layer having a thickness of between 0.03and 1 μm on the insulating layer 62 and on the copper layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the chromium layer.Alternatively, the metal layer 68 can be formed by sputtering a chromiumlayer having a thickness of between 0.03 and 1 μm on the insulatinglayer 62 and on the silver layer of the patterned circuit layer 60exposed by the opening 62 a, and then sputtering a copper layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the chromium layer. Alternatively, the metal layer 68 can beformed by sputtering a chromium layer having a thickness of between 0.03and 1 μm on the insulating layer 62 and on the nickel layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the chromium layer.

For example, the metal layer 68 can be formed by sputtering atantalum-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the gold layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a copper layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the tantalum-nitride layer. Alternatively, the metallayer 68 can be formed by sputtering a tantalum-nitride layer having athickness of between 0.03 and 1 μm on the insulating layer 62 and on thecopper layer of the patterned circuit layer 60 exposed by the opening 62a, and then sputtering a copper layer having a thickness of between 0.05and 2 μm, and preferably of between 0.1 and 1 μm, on thetantalum-nitride layer. Alternatively, the metal layer 68 can be formedby sputtering a tantalum-nitride layer having a thickness of between0.03 and 1 μm on the insulating layer 62 and on the silver layer of thepatterned circuit layer 60 exposed by the opening 62 a, and thensputtering a copper layer having a thickness of between 0.05 and 2 μm,and preferably of between 0.1 and 1 μm, on the tantalum-nitride layer.Alternatively, the metal layer 68 can be formed by sputtering atantalum-nitride layer having a thickness of between 0.03 and 1 μm onthe insulating layer 62 and on the nickel layer of the patterned circuitlayer 60 exposed by the opening 62 a, and then sputtering a copper layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the tantalum-nitride layer.

For example, the metal layer 68 can be formed by sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the insulating layer 62 and on the gold layer of thepatterned circuit layer 60 exposed by the opening 62 a. Alternatively,the metal layer 68 can be formed by sputtering a copper layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the insulating layer 62 and on the gold layer of the patternedcircuit layer 60 exposed by the opening 62 a. Alternatively, the metallayer 68 can be formed by sputtering a silver layer having a thicknessof between 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on theinsulating layer 62 and on the gold layer of the patterned circuit layer60 exposed by the opening 62 a.

For example, the metal layer 68 can be formed by sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the insulating layer 62 and on the copper layer of thepatterned circuit layer 60 exposed by the opening 62 a. Alternatively,the metal layer 68 can be formed by sputtering a copper layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the insulating layer 62 and on the copper layer of the patternedcircuit layer 60 exposed by the opening 62 a. Alternatively, the metallayer 68 can be formed by sputtering a silver layer having a thicknessof between 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on theinsulating layer 62 and on the copper layer of the patterned circuitlayer 60 exposed by the opening 62 a.

For example, the metal layer 68 can be formed by sputtering a gold layerhaving a thickness of between 0.05 and 2 μm, and preferably of between0.1 and 1 μm, on the insulating layer 62 and on the nickel layer of thepatterned circuit layer 60 exposed by the opening 62 a. Alternatively,the metal layer 68 can be formed by sputtering a copper layer having athickness of between 0.05 and 2 μm, and preferably of between 0.1 and 1μm, on the insulating layer 62 and on the nickel layer of the patternedcircuit layer 60 exposed by the opening 62 a. Alternatively, the metallayer 68 can be formed by sputtering a silver layer having a thicknessof between 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on theinsulating layer 62 and on the nickel layer of the patterned circuitlayer 60 exposed by the opening 62 a.

Next, referring to FIG. 6P, a photoresist layer 70, such as positivetype photoresist or negative type photoresist, having a thickness ofbetween 10 and 120 μm is formed on the metal layer 68 via a coatingprocess, a spraying process or a lamination process. Referring to FIG.6Q, the photoresist layer 70 is patterned with the processes ofexposure, development, etc., to form an opening 70 a in the photoresistlayer 70 exposing the metal layer 68. A 1× stepper or 1× contact alignercan be used to expose the photoresist layer 70 during the process ofexposure. However, some residuals from the photoresist layer 70 couldremain on the metal layer 68 exposed by the opening 70 a. Thereafter,the residuals can be removed from the metal layer 68 exposed by theopening 70 a with a plasma, such as O₂ plasma or plasma containingfluorine of below 200 PPM and oxygen.

For example, the photoresist layer 70 can be formed by coating apositive-type photosensitive polymer layer having a thickness of between5 and 150 μm, and preferably of between 20 and 50 μm, on theabove-mentioned copper layer, gold layer or silver layer of the metallayer 68, then exposing the photosensitive polymer layer using a 1×stepper or 1× contact aligner with at least two of G-line having awavelength ranging from 434 to 438 nm, H-line having a wavelengthranging from 403 to 407 nm, and Mine having a wavelength ranging from363 to 367 nm, illuminating the photosensitive polymer layer, that is,G-line and H-line, G-line and Mine, H-line and I-line, or G-line, H-lineand I-line illuminate the photosensitive polymer layer, then developingthe exposed polymer layer, and then removing the residual polymericmaterial or other contaminants on the metal layer 68 with an O₂ plasmaor a plasma containing fluorine of below 200 PPM and oxygen, such thatthe photoresist layer 70 can be patterned with an opening 70 a in thephotoresist layer 70 exposing the metal layer 68.

For example, the photoresist layer 70 can be formed by coating apositive type photoresist on the above-mentioned gold layer of the metallayer 68, and then patterning the positive type photoresist with theprocesses of exposure, development, etc., to form an opening in thepositive type photoresist exposing the above-mentioned gold layer of themetal layer 68. Alternatively, the photoresist layer 70 can be formed bycoating a positive type photoresist on the above-mentioned copper layerof the metal layer 68, and then patterning the positive type photoresistwith the processes of exposure, development, etc., to form an opening inthe positive type photoresist exposing the above-mentioned copper layerof the metal layer 68. Alternatively, the photoresist layer 70 can beformed by laminating a positive type photoresist on the above-mentionedgold layer of the metal layer 68, and then patterning the positive typephotoresist with the processes of exposure, development, etc., to forman opening in the positive type photoresist exposing the above-mentionedgold layer of the metal layer 68. Alternatively, the photoresist layer70 can be formed by laminating a positive type photoresist on theabove-mentioned copper layer of the metal layer 68, and then patterningthe positive type photoresist with the processes of exposure,development, etc., to form an opening in the positive type photoresistexposing the above-mentioned copper layer of the metal layer 68.

Referring to FIG. 6R, a metal layer 72 having a thickness of between 5and 100 μm, and preferably of between 10 and 30 μm, is electroplated onthe metal layer 68 exposed by the opening 70 a. The material of themetal layer 72 may include gold, copper, silver or nickel. For example,the metal layer 72 can be formed by electroplating a gold layer having athickness of between 5 and 100 μm, and preferably of between 10 and 30μm, on the gold layer of the metal layer 68 exposed by the opening 70 a.Alternatively, the metal layer 72 can be formed by electroplating acopper layer having a thickness of between 5 and 100 μm, and preferablyof between 10 and 30 μm, on the copper layer of the metal layer 68exposed by the opening 70 a. Alternatively, the metal layer 72 can beformed by electroplating a silver layer having a thickness of between 5and 100 μm, and preferably of between 10 and 30 μm, on the silver layerof the metal layer 68 exposed by the opening 70 a. Alternatively, themetal layer 72 can be formed by electroplating a copper layer having athickness of between 5 and 100 μm, and preferably of between 10 and 30μm, on the copper layer of the metal layer 68 exposed by the opening 70a, and then electroplating a nickel layer having a thickness of between1 and 10 microns on the electroplated copper layer in the opening 70 a,wherein the thickness of the electroplated copper layer, in the opening56 a, plus the nickel layer is between 5 and 100 μm, and preferably ofbetween 10 and 30 μm. Alternatively, the metal layer 72 can be formed byelectroplating a copper layer having a thickness of between 5 and 100μm, and preferably of between 10 and 30 μm, on the copper layer of themetal layer 68 exposed by the opening 70 a, then electroplating a nickellayer having a thickness of between 1 and 10 microns on theelectroplated copper layer in the opening 70 a, and then electroplatinga gold layer having a thickness of between 0.5 and 5 microns on thenickel in the opening 70 a, wherein the thickness of the electroplatedcopper layer, in the opening 56 a, the nickel layer and the gold layeris between 5 and 100 μm, and preferably of between 10 and 30 μm.

Next, referring to FIG. 6S, after the metal layer 72 is formed, most ofthe photoresist layer 70 can be removed using an organic solution withamide. However, some residuals from the photoresist layer 70 couldremain on the metal layer 72 and on the metal layer 68. Thereafter, theresiduals can be removed from the metal layer 72 and from the metallayer 68 with a plasma, such as O₂ plasma or plasma containing fluorineof below 200 PPM and oxygen.

Next, referring to FIG. 6T, the metal layer 68 not under the metal layer72 is removed with a dry etching method or a wet etching method. As tothe wet etching method, when the metal layer 68 comprises atitanium-tungsten-alloy layer, the titanium-tungsten-alloy layer can beetched with a solution containing hydrogen peroxide; when the metallayer 68 comprises a titanium layer, the titanium layer can be etchedwith a solution containing hydrogen fluoride; when the metal layer 68comprises a gold layer, the gold layer can be etched with aniodine-containing solution, such as solution containing potassiumiodide; when the metal layer 68 comprises a copper layer, the copperlayer can be etched with a solution containing NH4OH. As to the dryetching method, when the metal layer 68 comprises a titanium layer or atitanium-tungsten-alloy layer, the titanium layer or thetitanium-tungsten-alloy layer can be etched with a chlorine-containingplasma etching process or with an RIE process; when the metal layer 68comprises is a gold layer, the gold layer can be removed with an ionmilling process or with an Ar sputtering etching process. Generally, thedry etching method to etch the metal layer 68 not under the metal layer72 may include a chemical plasma etching process, a sputtering etchingprocess, such as argon sputter process, or a chemical vapor etchingprocess.

Thereby, in this embodiment, a patterned circuit layer 74 can be formedon the insulating layer 62 and on the patterned circuit layer 60 exposedby the opening 62 a. The patterned circuit layer 74 can be formed of themetal layer 68 and the electroplated metal layer 72 on the metal layer68.

Next, referring to FIG. 6U, a solder mask 76 having a thickness ofbetween 15 and 150 μm can be formed on the insulating layer 62 and onthe patterned circuit layer 74 via a coating process, a spraying processor a lamination process. The material of the solder mask 76 may bepolymer material, such as epoxy resin, benzocyclobutene (BCB) orpolyimide. Next, referring to FIG. 6V, the solder mask 76 is patternedwith a laser drill process or the processes of exposure, development,etc., to form an opening 76 a in the solder mask 76 exposing thepatterned circuit layer 74. For example, the solder mask 76 can beformed by coating or laminating an epoxy resin layer having a thicknessof between 15 and 150 μm on the insulating layer 62 and on the patternedcircuit layer 74, and then patterning the epoxy resin layer with a laserdrill process to form an opening in the epoxy resin layer exposing thepatterned circuit layer 74. Alternatively, the solder mask 76 can beformed by coating or laminating a photo sensitive epoxy resin layerhaving a thickness of between 15 and 150 μm on the insulating layer 62and on the patterned circuit layer 74, and then patterning the photosensitive epoxy resin layer with the processes of exposure, development,etc., to form an opening in the epoxy resin layer exposing the patternedcircuit layer 74.

However, some residuals from the solder mask 76 could remain on thepatterned circuit layer 74 exposed by the opening 76 a. Thereafter, theresiduals can be removed from the patterned circuit layer 74 exposed bythe opening 76 a with a plasma, such as O₂ plasma or plasma containingfluorine of below 200 PPM and oxygen.

Referring to FIG. 6W, a tin-containing ball 64 with a diameter ofbetween 0.25 and 1.2 mm is formed over the patterned circuit layer 74exposed by the opening 76 a and connected to the patterned circuit layer74 through the opening 76 a. For example, a nickel layer having athickness of between 0.05 and 5 microns can be electroless plated on thecopper layer of the patterned circuit layer 74 exposed by the opening 76a; next, a gold layer having a thickness of between 0.05 and 2 micronsis electroless plated on the nickel layer; and next, the tin-containingball 64 is planted on the gold layer. Alternatively, the tin-containingball 64 may be formed by planting a tin-lead-alloy ball on the goldlayer of the patterned circuit layer 74 exposed by the opening 76 a at atemperature of between 180 and 190° C. Alternatively, the tin-containingball 64 can be formed by screen printing a tin-lead alloy on the goldlayer of the patterned circuit layer 74 exposed by the opening 76 a, andthen heating or reflowing the tin-lead alloy at a temperature of between180 and 190° C. Alternatively, the tin-containing ball 64 may be formedby planting a lead-free ball, such as tin-silver alloy ortin-silver-copper alloy, on the gold layer of the patterned circuitlayer 74 exposed by the opening 76 a at a temperature of between 200 and250° C. Alternatively, the tin-containing ball 64 can be formed byscreen printing a lead-free alloy, such as tin-silver alloy ortin-silver-copper alloy, on the gold layer of the patterned circuitlayer 74 exposed by the opening 76 a, and then heating or reflowing thelead-free alloy at a temperature of between 200 and 250° C.

Alternatively, the tin-containing ball 64 may be formed by planting atin-lead-alloy ball on the copper layer of the patterned circuit layer74 exposed by the opening 76 a at a temperature of between 180 and 190°C. Alternatively, the tin-containing ball 64 can be formed by screenprinting a tin-lead alloy on the copper layer of the patterned circuitlayer 74 exposed by the opening 76 a, and then heating or reflowing thetin-lead alloy at a temperature of between 180 and 190° C.Alternatively, the tin-containing ball 64 may be formed by planting alead-free ball, such as tin-silver alloy or tin-silver-copper alloy, onthe copper layer of the patterned circuit layer 74 exposed by theopening 76 a at a temperature of between 200 and 250° C. Alternatively,the tin-containing ball 64 can be formed by screen printing a lead-freealloy, such as tin-silver alloy or tin-silver-copper alloy, on thecopper layer of the patterned circuit layer 74 exposed by the opening 76a, and then heating or reflowing the lead-free alloy at a temperature ofbetween 200 and 250° C.

Referring to FIG. 6X, after the tin-containing ball 64 is formed, thesubstrate 48, the polymer material 52, the insulating layer 62 and thesolder mask 76 can be cuffed into a plurality of chip packages 78 usinga mechanical cutting process or using a laser cutting process.

Referring to FIG. 6Y, in this embodiment, the patterned circuit layer 60and the patterned circuit layer 74 may include an interconnect traceconnecting multiple metal bumps 22 of the two semiconductor chips 44 forproviding a power voltage, a ground reference voltage or fortransmitting a signal, such as clock signal, address signal, data signalor logic signal. Multiple tin-containing balls 64 are connected to themetal bumps 22 of the semiconductor chips 44 via the patterned circuitlayer 60 and the patterned circuit layer 74. After the tin-containingballs 64 are formed, the substrate 48, the polymer material 52, theinsulating layer 62 and the solder mask 76 can be cutted into aplurality of chip packages using a mechanical cutting process or using alaser cutting process. Each chip package includes multiple semiconductorchips connected to each other or one another through the above-mentionedinterconnect trace.

Embodiment 2

Referring to FIG. 7A, a glue material 80 is first formed on multipleregions of a substrate 48 by a coating process, a lamitation process, animmerseon process or a spraying process to form multiple glue portionson the substrate 48. Next, multiple semiconductor chips 44 arerespectively mounted onto the glue material 80 to be adhered to thesubstrate 48 by heating the glue material 80 at a temperature of between120 and 250° C. In another word, the semiconductor substrate 2 of thesemiconductor chip 44 can be adhered to the substrate 48 using the gluematerial 80.

The material of the glue material 80 may be polymer material, such aspolyimide or epoxy resin, and the thickness of the glue material 80 isbetween 1 and 50 μm. For example, the glue material 80 may be polyimidehaving a thickness of between 1 and 50 μm. Alternatively, the gluematerial 46 may be epoxy resin having a thickness of between 1 and 50μm. Therefore, the semiconductor chips 44 can be adhered to thesubstrate 48 using polyimide. Alternatively, the semiconductor chips 44can be adhered to the substrate 48 using epoxy resin. The structure ofthe substrate 48 shown in FIGS. 7A-7I can be referred to the substrate48 illustrated in FIGS. 6A and 6B.

Referring to FIG. 7B, multiple cavities 82 may be formed in thesubstrate 48 using a mechanical drilling process, a laser drillingprocess or an etching process. Next, a glue material 80 can be formed onthe surfaces of the cavities 82 in the substrate 48 by a coatingprocess, a lamitation process, a immerseon process or a spraying processto form multiple glue portions in the cavities 82. Next, multiplesemiconductor chips 44 are respectively mounted onto the glue portions80 in the cavities 82 to be adhered to the surfaces of the cavities 82in the substrate 48 by heating the glue material 80 at a temperature ofbetween 120 and 250° C. In another word, the semiconductor substrate 2of the semiconductor chip 44 can be adhered to the surfaces of thecavities 82 in the substrate 48 using the glue material 80. Therefore,the semiconductor chips 44 can be adhered to the surfaces of thecavities 82 in the substrate 48 using polyimide. Alternatively, thesemiconductor chips 44 can be adhered to the surfaces of the cavities 82in the substrate 48 using epoxy resin.

Referring to FIG. 7C, a polymer material 52 having a thickness t7 ofbetween 250 and 1,000 μm is formed on the glue material 80, on thesemiconductor chips 44 and enclosing the metal bumps 22 of thesemiconductor chips 44. The polymer material 52 can be formed by moldingbenzocyclobutane (BCB), polyimide (PI) or an epoxy-based material, bydispensing benzocyclobutane (BCB), polyimide (PI) or an epoxy-basedmaterial, by coating benzocyclobutane (BCB), polyimide (PI) or anepoxy-based material, by printing benzocyclobutane (BCB), polyimide (PI)or an epoxy-based material, or by laminating benzocyclobutane (BCB),polyimide (PI) or an epoxy-based material.

For example, the polymer material 52 can be formed by molding anepoxy-based material having a thickness t7 of between 250 and 1,000 μmon the glue material 80, made of polyimide, on the semiconductor chips44 and enclosing any one of the above-mentioned kinds of metal bump 22as illustrated in FIGS. 2A-2I, 2A-a through 2A-g, in FIGS. 3A-3G, inFIGS. 4A-4E and in FIG. 5. Alternatively, the polymer material 52 can beformed by molding an epoxy-based material having a thickness t7 ofbetween 250 and 1,000 μm on the glue material 80, made of epoxy resin,on the semiconductor chips 44 and enclosing any one of theabove-mentioned kinds of metal bump 22 as illustrated in FIGS. 2A-2I,2A-a through 2A-g, in FIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5.Alternatively, the polymer material 52 can be formed by moldingpolyimide or benzocyclobutane having a thickness t7 of between 250 and1,000 μm on the glue material 80, made of polyimide, on thesemiconductor chip 44 and enclosing any one of the above-mentioned kindsof metal bump 22 as illustrated in FIGS. 2A-2I, 2A-a through 2A-g, inFIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5. Alternatively, the polymermaterial 52 can be formed by molding polyimide or benzocyclobutanehaving a thickness t7 of between 250 and 1,000 μm on the glue material80, made of epoxy resin, on the semiconductor chip 44 and enclosing anyone of the above-mentioned kinds of metal bump 22 as illustrated inFIGS. 2A-2I, 2A-a through 2A-g, in FIGS. 3A-3G, in FIGS. 4A-4E and inFIG. 5.

For example, the polymer material 52 can be formed by dispensingpolyimide or benzocyclobutane having a thickness t7 of between 250 and1,000 μm on the glue material 80, made of polyimide, on thesemiconductor chip 44 and enclosing any one of the above-mentioned kindsof metal bump 22 as illustrated in FIGS. 2A-2I, 2A-a through 2A-g, inFIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5. Alternatively, the polymermaterial 52 can be formed by dispensing polyimide or benzocyclobutanehaving a thickness t7 of between 250 and 1,000 μm on the glue material80, made of epoxy resin, on the semiconductor chip 44 and enclosing anyone of the above-mentioned kinds of metal bump 22 as illustrated inFIGS. 2A-2I, 2A-a through 2A-g, in FIGS. 3A-3G, in FIGS. 4A-4E and inFIG. 5.

Referring to FIG. 7D, a top surface of the polymer material 52 ispolished to uncover a top surface of the metal bump 22 and to planarizea top surface of the polymer material 52, preferably by a mechanicalpolishing process. Alternatively, the top surface of the polymermaterial 52 is polished by a chemical mechanical polishing (CMP)process. When the polymer material 52 is being polished, the top portionof the metal bump 22 is allowed to be removed such that the metal bump22, after being polished, may have a thickness t8 between 10 and 30microns.

After the polymer material 52 is formed, the steps as referred to inFIGS. 6E-6M are performed in sequence. Next, referring to FIG. 7E, thesubstrate 48, the glue material 80, the polymer material 52 and theinsulating layer 62 can be cuffed into a plurality of chip packages 84using a mechanical cutting process or using a laser cutting process.Alternatively, referring to FIG. 7F, the glue material 80, the polymermaterial 52 and the insulating layer 62 can be cuffed using a mechanicalcutting process or using a laser cutting process in the time when thesubstrate 48 is not cuffed, and then the substrate 48 is separated fromthe semiconductor chips 44 and the polymer material 52. So far, multiplechip packages 86 are completed.

In this embodiment, multiple patterned circuit layers and multipleinsulating layers can be formed over the polymer material 52, whereinone of the insulating layers is between the neighboring two of thepatterned circuit layers. These patterned circuit layers are connectedto each other through multiple metal vias in the insulating layers. Thetin-containing ball 64 can be formed over the topmost one of thepatterned circuit layers, and the bottommost one of the patternedcircuit layers can be connected to the metal bump 22. The followingexample is described for forming two patterned circuit layers. More thantwo patterned circuit layers can be referred to the following example.

After the polymer material 52 is formed, the steps as referred to inFIGS. 6E-6W are performed in sequence. Next, referring to FIG. 7G, thesubstrate 48, the glue material 80, the polymer material 52, theinsulating layer 62 and the solder mask 76 can be cuffed into aplurality of chip packages 88 using a mechanical cutting process orusing a laser cutting process. Alternatively, referring to FIG. 7H, theglue material 80, the polymer material 52, the insulating layer 62 andthe solder mask 76 can be cutted using a mechanical cutting process orusing a laser cutting process in the time when the substrate 48 is notcutted, and then the substrate 48 is separated from the semiconductorchips 44 and the polymer material 52. So far, multiple chip packages 90are completed.

Referring to FIG. 7I, in this embodiment, the patterned circuit layer 60and the patterned circuit layer 74 may include an interconnect traceconnecting multiple metal bumps 22 of the two semiconductor chips 44 forproviding a power voltage, a ground reference voltage or fortransmitting a signal, such as clock signal, address signal, data signalor logic signal. Multiple tin-containing balls 64 are connected to themetal bumps 22 of the semiconductor chips 44 via the patterned circuitlayer 60 and the patterned circuit layer 74. After the tin-containingballs 64 are formed, the substrate 48, the glue material 80, the polymermaterial 52, the insulating layer 62 and the solder mask 76 can becutted into a plurality of chip packages using a mechanical cuttingprocess or using a laser cutting process. Alternatively, referring toFIG. 7J, the glue material 80, the polymer material 52, the insulatinglayer 62 and the solder mask 76 can be cutted using a mechanical cuttingprocess or using a laser cutting process in the time when the substrate48 is not cutted, and then the substrate 48 is separated from thesemiconductor chips 44 and the polymer material 52. So far, multiplechip packages are completed. Each chip package includes multiplesemiconductor chips connected to each other or one another through theabove-mentioned interconnect trace.

Embodiment 3

Referring to FIG. 8A, a glue material 46 is first formed on multipleregions of a substrate 48 by a dispensing process to form multiple glueportions on the substrate 48. Next, multiple semiconductor chips 44 andmultiple passive devices 92, such as resistors, capacitors, inductors orfilters, are respectively mounted onto the glue material 46 to beadhered to the substrate 48, and then the glue material 46 is baked at atemperature of between 100 and 200° C. The specification of the gluematerial 46 and the substrate 48 shown in FIGS. 8A-8M can be referred tothe glue material 46 and the substrate 48 illustrated in FIGS. 6A and6B.

Referring to FIG. 8B, a polymer material 52 having a thickness ofbetween t9 of between 250 and 1,000 μm is formed on the substrate 48, onthe passive devices 92, on the semiconductor chips 44 and enclosing themetal bumps 22. The polymer material 52 can be formed by a moldingprocess or a dispensing process. The polymer material 52 can be formedby molding benzocyclobutane (BCB), polyimide (PI) or an epoxy-basedmaterial, by dispensing benzocyclobutane (BCB), polyimide (PI) or anepoxy-based material, by coating benzocyclobutane (BCB), polyimide (PI)or an epoxy-based material, by printing benzocyclobutane (BCB),polyimide (PI) or an epoxy-based material, or by laminatingbenzocyclobutane (BCB), polyimide (PI) or an epoxy-based material.

For example, the polymer material 52 can be formed by molding anepoxy-based material having a thickness t9 of between 250 and 1,000 μmon the substrate 48, on the passive devices 92, on the semiconductorchips 44 and enclosing any one of the above-mentioned kinds of metalbump 22 as illustrated in FIGS. 2A-2I, 2A-a through 2A-g, in FIGS.3A-3G, in FIGS. 4A-4E and in FIG. 5. Alternatively, the polymer material52 can be formed by molding polyimide or benzocyclobutane having athickness t9 of between 250 and 1,000 μm on the substrate 48, on thepassive devices 92, on the semiconductor chips 44 and enclosing any oneof the above-mentioned kinds of metal bump 22 as illustrated in FIGS.2A-2I, 2A-a through 2A-g, in FIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5.

For example, the polymer material 52 can be formed by dispensingpolyimide or benzocyclobutane having a thickness t9 of between 250 and1,000 μm on the substrate 48, on the passive devices 92, on thesemiconductor chips 44 and enclosing any one of the above-mentionedkinds of metal bump 22 as illustrated in FIGS. 2A-2I, 2A-a through 2A-g,in FIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5.

Referring to FIG. 8C, a top surface of the polymer material 52 ispolished to uncover a top surface of the metal bump 22 and a contactpoint 92 a of the passive device 92 and to planarize a top surface ofthe polymer material 52, preferably by a mechanical polishing process.Alternatively, the top surface of the polymer material 52 is polished bya chemical mechanical polishing (CMP) process. When the polymer material52 is being polished, the top portion of the metal bump 22 is allowed tobe removed such that the metal bump 22, after being polished, may have athickness t6 between 10 and 30 microns.

Referring to FIG. 8D, a metal layer 54 can be sputtered on the polymermaterial 52, on the contact point 92 a and on a top surface of the metalbump 22. Alternatively, the metal layer 54 may be formed by anelectroless plating process. The metal layer 54 can be formed of anadhesion/barrier layer having a thickness of between 0.03 and 1 μm onthe polymer material 52 m, on the contact point 92 a and on the topsurface of the metal bump 22, and a seed layer having a thickness ofbetween 0.05 and 2 μm, and preferably of between 0.1 and 1 μm, on theadhesion/barrier layer. Alternatively, the metal layer 54 can be formedof a seed layer having a thickness of between 0.05 and 2 μm, andpreferably of between 0.1 and 1 μm, on the polymer material 52, on thecontact point 92 a, and on the top surface of the metal bump 22. Thematerial of the adhesion/barrier layer may include titanium, atitanium-tungsten alloy, titanium nitride, chromium, or tantalumnitride. The material of the seed layer may include gold, copper orsilver. The process for forming the metal layer 54 on the polymermaterial 52, on the contact point 92 a and on the metal bumps 22, asshown in FIG. 8D, can be referred to the process for forming the metallayer 54 on the polymer material 52 and on the metal bump 22, asillustrated in FIG. 6E.

After the metal layer 54 is formed, the steps as referred to in FIGS.6F-6M are performed in sequence. Next, referring to FIG. 8E, thesubstrate 48, the polymer material 52 and the insulating layer 62 can becutted into a plurality of chip packages 94 using a mechanical cuttingprocess or using a laser cutting process.

In these chip packages 94, the patterned circuit layer 60 may include aninterconnect trace connecting one of the metal bump 22 of thesemiconductor chip 44 and the contact point 92 a of the passive device92 for providing a power voltage, a ground reference voltage or fortransmitting a signal. A tin-containing ball 64 is connected to theother one of the metal bump 22 of the semiconductor chips 44 via thepatterned circuit layer 60, and another tin-containing ball 64 isconnected to the interconnect trace via the patterned circuit layer 60.

Alternatively, referring to FIG. 8F, these chip packages 94 may comprisea semiconductor chip 44 and two passive devices 96 and 98. The patternedcircuit layer 60 may include a first interconnect trace connecting oneof the metal bumps 22 of the semiconductor chip 44 to the contact point96 a of the passive device 96 for providing a power voltage, a groundreference voltage or for transmitting a signal, and a secondinterconnect trace connecting the other one of the metal bumps 22 of thesemiconductor chip 44 to the contact point 98 a of the passive device 98for providing a power voltage, a ground reference voltage or fortransmitting a signal. The tin-containing balls 64 are connected to thesemiconductor chip 44 and the passive devices 96 and 98 via thepatterned circuit layer 60. When the passive device 96 is a resistor,the passive device 98 can be a capacitor. When the passive device 96 isa resistor, the passive device 98 can be an inductor. When the passivedevice 96 is a capacitor, the passive device 98 can be an inductor.

Alternatively, multiple patterned circuit layers and multiple insulatinglayers can be formed over the polymer material 52, wherein one of theinsulating layers is between the neighboring two of the patternedcircuit layers. These pattered circuit layers are connected to eachother through multiple metal vias in the insulating layers. Thetin-containing ball 64 can be formed over the topmost one of thepatterned circuit layers, and the bottommost one of the patternedcircuit layers can be connected to the metal bump 22 and a contact pointof the passive device. The following example is described for formingtwo patterned circuit layers. More than two patterned circuit layers canbe referred to the following example.

After the metal layer 54 is formed, the steps as referred to in FIGS.6F-6W are performed in sequence. Next, referring to FIG. 8G, thesubstrate 48, the polymer material 52, the insulating layer 62 and thesolder mask 76 can be cutted into a plurality of chip packages 95 usinga mechanical cutting process or using a laser cutting process.

In these chip packages 95, the patterned circuit layer 60 may include aninterconnect trace connecting one of the metal bump 22 of thesemiconductor chip 44 and the contact point 92 a of the passive device92 for providing a power voltage, a ground reference voltage or fortransmitting a signal. The interconnect trace may be connected to atin-containing ball 64 via the patterned circuit layer 74. Thetin-containing balls 64 can be connected to the integrated circuit chip44 and the passive device 92 through these patterned circuit layers 60and 74.

Alternatively, in these chip packages 95, the patterned circuit layers60 and 74 may include an interconnect trace connecting one of the metalbump 22 of the semiconductor chip 44 and the contact point 92 a of thepassive device 92 for providing a power voltage, a ground referencevoltage or for transmitting a signal. The interconnect trace may beconnected to a tin-containing ball 64 via the patterned circuit layer74. The tin-containing balls 64 can be connected to the integratedcircuit chip 44 and the passive device 92 through these patternedcircuit layers 60 and 74.

Alternatively, referring to FIG. 8H, these chip packages 95 may comprisea semiconductor chip 44 and two passive devices 96 and 98. The patternedcircuit layer 60 may include a first interconnect trace connecting oneof the metal bumps 22 of the semiconductor chip 44 to the contact point96 a of the passive device 96 for providing a power voltage, a groundreference voltage or for transmitting a signal, and a secondinterconnect trace connecting the other one of the metal bumps 22 of thesemiconductor chip 44 to the contact point 98 a of the passive device 98for providing a power voltage, a ground reference voltage or fortransmitting a signal. The tin-containing balls 64 are connected to thesemiconductor chip 44 and the passive devices 96 and 98 via thepatterned circuit layer 60 and the patterned circuit layer 74.Alternatively, these chip packages 95 may comprise a semiconductor chip44 and two passive devices 96 and 98. The patterned circuit layers 60and 74 may include a first interconnect trace connecting one of themetal bumps 22 of the semiconductor chip 44 to the contact point 96 a ofthe passive device 96 for providing a power voltage, a ground referencevoltage or for transmitting a signal, and a second interconnect traceconnecting the other one of the metal bumps 22 of the semiconductor chip44 to the contact point 98 a of the passive device 98 for providing apower voltage, a ground reference voltage or for transmitting a signal.The tin-containing balls 64 are connected to the semiconductor chip 44and the passive devices 96 and 98 via the patterned circuit layer 60 andthe patterned circuit layer 74. When the passive device 96 is aresistor, the passive device 98 can be a capacitor. When the passivedevice 96 is a resistor, the passive device 98 can be an inductor. Whenthe passive device 96 is a capacitor, the passive device 98 can be aninductor.

Referring to FIG. 8I, multiple cavities 50 may be formed in thesubstrate 48 using a mechanical drilling process, a laser drillingprocess or an etching process. Next, a glue material 46 can be formed onbottom surfaces of the cavities 50 in the substrate 48 for adhering topassive devices 92 and on a top surface of the substrate 48, not overthe cavities 50, for adhering to the semiconductor chips 44 by adispensing process to form multiple glue portions. Next, multiplesemiconductor chips 44 are mounted onto the glue material 46 on the topsurface of the substrate 48, not over the cavities 50, and multiplepassive devices 92 are mounted onto the glue material 46 in the cavities50. Next, the glue material 46 is baked at a temperature of between 100and 200° C.

Referring to FIG. 8J, after these semiconductor chips 44 and thesepassive devices 92 are adhered to the substrate 48, the steps asreferred to in FIGS. 8B-8E are performed in sequence. So far, multiplechip packages 100 are completed.

In these chip packages 100, the patterned circuit layer 60 may includean interconnect trace connecting one of the metal bump 22 of thesemiconductor chip 44 and the contact point 92 a of the passive device92 for providing a power voltage, a ground reference voltage or fortransmitting a signal. A tin-containing ball 64 is connected to theother one of the metal bump 22 of the semiconductor chips 44 via thepatterned circuit layer 60, and another tin-containing ball 64 isconnected to the interconnect trace via the patterned circuit layer 60.

Alternatively, referring to FIG. 8K, these chip packages 100 maycomprise a semiconductor chip 44 and two passive devices 96 and 98. Thepatterned circuit layer 60 may include a first interconnect traceconnecting one of the metal bumps 22 of the semiconductor chip 44 to thecontact point 96 a of the passive device 96 for providing a powervoltage, a ground reference voltage or for transmitting a signal, and asecond interconnect trace connecting the other one of the metal bumps 22of the semiconductor chip 44 to the contact point 98 a of the passivedevice 98 for providing a power voltage, a ground reference voltage orfor transmitting a signal. The tin-containing balls 64 are connected tothe semiconductor chip 44 and the passive devices 96 and 98 via thepatterned circuit layer 60. When the passive device 96 is a resistor,the passive device 98 can be a capacitor. When the passive device 96 isa resistor, the passive device 98 can be an inductor. When the passivedevice 96 is a capacitor, the passive device 98 can be an inductor.

Alternatively, multiple patterned circuit layers and multiple insulatinglayers can be formed over the polymer material 52, wherein one of theinsulating layers is between the neighboring two of the patternedcircuit layers. These patterned circuit layers are connected to eachother through multiple metal vias in the insulating layers. Thetin-containing ball 64 can be formed over the topmost one of thepatterned circuit layers, and the bottommost one of the patternedcircuit layers can be connected to the metal bump 22 and a contact pointof the passive device. The following example is described for formingtwo patterned circuit layers. More than two patterned circuit layers canbe referred to the following example.

After the metal layer 54 is formed, the steps as referred to in FIGS.6F-6W are performed in sequence. Next, referring to FIG. 8L, thesubstrate 48, the polymer material 52, the insulating layer 62 and thesolder mask 76 can be cuffed into a plurality of chip packages 101 usinga mechanical cutting process or using a laser cutting process.

In these chip packages 101, the patterned circuit layer 60 may includean interconnect trace connecting one of the metal bump 22 of thesemiconductor chip 44 and the contact point 92 a of the passive device92 for providing a power voltage, a ground reference voltage or fortransmitting a signal. The interconnect trace may be connected to atin-containing ball 64 via the patterned circuit layer 74. Thetin-containing balls 64 can be connected to the integrated circuit chip44 and the passive device 92 through these patterned circuit layers 60and 74.

Alternatively, in these chip packages 101, the patterned circuit layers60 and 74 may include an interconnect trace connecting one of the metalbump 22 of the semiconductor chip 44 and the contact point 92 a of thepassive device 92 for providing a power voltage, a ground referencevoltage or for transmitting a signal. The interconnect trace may beconnected to a tin-containing ball 64 via the patterned circuit layer74. The tin-containing balls 64 can be connected to the integratedcircuit chip 44 and the passive device 92 through these patternedcircuit layers 60 and 74.

Alternatively, referring to FIG. 8M, these chip packages 101 maycomprise a semiconductor chip 44 and two passive devices 96 and 98. Thepatterned circuit layer 60 may include a first interconnect traceconnecting one of the metal bumps 22 of the semiconductor chip 44 to thecontact point 96 a of the passive device 96 for providing a powervoltage, a ground reference voltage or for transmitting a signal, and asecond interconnect trace connecting the other one of the metal bumps 22of the semiconductor chip 44 to the contact point 98 a of the passivedevice 98 for providing a power voltage, a ground reference voltage orfor transmitting a signal. The tin-containing balls 64 are connected tothe semiconductor chip 44 and the passive devices 96 and 98 via thepatterned circuit layer 60 and the patterned circuit layer 74.Alternatively, these chip packages 101 may comprise a semiconductor chip44 and two passive devices 96 and 98. The patterned circuit layers 60and 74 may include a first interconnect trace connecting one of themetal bumps 22 of the semiconductor chip 44 to the contact point 96 a ofthe passive device 96 for providing a power voltage, a ground referencevoltage or for transmitting a signal, and a second interconnect traceconnecting the other one of the metal bumps 22 of the semiconductor chip44 to the contact point 98 a of the passive device 98 for providing apower voltage, a ground reference voltage or for transmitting a signal.The tin-containing balls 64 are connected to the semiconductor chip 44and the passive devices 96 and 98 via the patterned circuit layer 60 andthe patterned circuit layer 74. When the passive device 96 is aresistor, the passive device 98 can be a capacitor. When the passivedevice 96 is a resistor, the passive device 98 can be an inductor. Whenthe passive device 96 is a capacitor, the passive device 98 can be aninductor.

Embodiment 4

Referring to FIG. 9A, a glue material 80 is first formed on multipleregions of a substrate 48 by a coating process, a lamitation process, animmerseon process or a spraying process to form multiple glue portionson the substrate 48. Next, multiple semiconductor chips 44 and multiplepassive devices 92, such as resistors, capacitors, inductors or filters,are respectively mounted onto the glue material 80 to be adhered to thesubstrate 48 by heating the glue material 80 at a temperature of between120 and 250 μm. The structure of the substrate 48 shown in FIGS. 9A-9Lcan be referred to the substrate 48 illustrated in FIGS. 6A and 6B. Thespecification of the glue material 80 shown in FIGS. 9A-9L can bereferred to the glue material 80 illustrated in FIG. 7A.

Referring to FIG. 9B, a polymer material 52 having a thickness ofbetween t10 of between 250 and 1,000 μm is formed on the glue material80, on the passive devices 92, on the semiconductor chips 44 andenclosing the metal bumps 22. The polymer material 52 can be formed by amolding process or a dispensing process. The polymer material 52 can beformed by molding benzocyclobutane (BCB), polyimide (PI) or anepoxy-based material, by dispensing benzocyclobutane (BCB), polyimide(PI) or an epoxy-based material, by coating benzocyclobutane (BCB),polyimide (PI) or an epoxy-based material, by printing benzocyclobutane(BCB), polyimide (PI) or an epoxy-based material, or by laminatingbenzocyclobutane (BCB), polyimide (PI) or an epoxy-based material.

For example, the polymer material 52 can be formed by molding anepoxy-based material having a thickness t10 of between 250 and 1,000 μmon the glue material 80, made of polyimide, on the passive device 92, onthe semiconductor chip 44 and enclosing any one of the above-mentionedkinds of metal bump 22 as illustrated in FIGS. 2A-2I, 2A-a through 2A-g,in FIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5. Alternatively, the polymermaterial 52 can be formed by molding an epoxy-based material having athickness t10 of between 250 and 1,000 μm on the glue material 80, madeof epoxy resin, on the passive device 92, on the semiconductor chip 44and enclosing any one of the above-mentioned kinds of metal bump 22 asillustrated in FIGS. 2A-2I, 2A-a through 2A-g, in FIGS. 3A-3G, in FIGS.4A-4E and in FIG. 5. Alternatively, the polymer material 52 can beformed by molding polyimide or benzocyclobutane having a thickness t10of between 250 and 1,000 μm on the glue material 80, made of polyimide,on the passive device 92, on the semiconductor chip 44 and enclosing anyone of the above-mentioned kinds of metal bump 22 as illustrated inFIGS. 2A-2I, 2A-a through 2A-g, in FIGS. 3A-3G, in FIGS. 4A-4E and inFIG. 5. Alternatively, the polymer material 52 can be formed by moldingpolyimide or benzocyclobutane having a thickness t10 of between 250 and1,000 μm on the glue material 80, made of epoxy resin, on the passivedevice 92, on the semiconductor chip 44 and enclosing any one of theabove-mentioned kinds of metal bump 22 as illustrated in FIGS. 2A-2I,2A-a through 2A-g, in FIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5.

For example, the polymer material 52 can be formed by dispensingpolyimide or benzocyclobutane having a thickness t10 of between 250 and1,000 μm on the glue material 80, made of polyimide, on the passivedevice 92, on the semiconductor chip 44 and enclosing any one of theabove-mentioned kinds of metal bump 22 as illustrated in FIGS. 2A-2I,2A-a through 2A-g, in FIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5.Alternatively, the polymer material 52 can be formed by dispensingpolyimide or benzocyclobutane having a thickness t10 of between 250 and1,000 μm on the glue material 80, made of epoxy resin, on the passivedevice 92, on the semiconductor chip 44 and enclosing any one of theabove-mentioned kinds of metal bump 22 as illustrated in FIGS. 2A-2I,2A-a through 2A-g, in FIGS. 3A-3G, in FIGS. 4A-4E and in FIG. 5.

Referring to FIG. 9C, a top surface of the polymer material 52 ispolished to uncover a top surface of the metal bump 22 and a contactpoint 92 a of the passive device 92 and to planarize a top surface ofthe polymer material 52, preferably by a mechanical polishing process.Alternatively, the top surface of the polymer material 52 is polished bya chemical mechanical polishing (CMP) process. When the polymer material52 is being polished, the top portion of the metal bump 22 is allowed tobe removed such that the metal bump 22, after being polished, may have athickness t6 between 10 and 30 microns.

Referring to FIG. 9D, after the step of show in FIG. 9C, the steps asreferred to in FIGS. 6E-6M are performed in sequence. Next, thesubstrate 48, the glue material 80, the polymer material 52 and theinsulating layer 62 can be cutted into a plurality of chip packages 110using a mechanical cutting process or using a laser cutting process.Alternatively, the glue material 80, the polymer material 52 and theinsulating layer 62 can be cutted using a mechanical cutting process orusing a laser cutting process in the time when the substrate 48 is notcutted, and then the substrate 48 is separated from the semiconductorchips 44, the passive devices 92 and the polymer material 52. So far,multiple chip packages 110 are completed.

In these chip packages 110, the patterned circuit layer 60 may includean interconnect trace connecting one of the metal bump 22 of thesemiconductor chip 44 and the contact point 92 a of the passive device92 for providing a power voltage, a ground reference voltage or fortransmitting a signal. A tin-containing ball 64 is connected to theother one of the metal bump 22 of the semiconductor chips 44 via thepatterned circuit layer 60, and another tin-containing ball 64 isconnected to the interconnect trace via the patterned circuit layer 60.

Alternatively, referring to FIG. 9E, these chip packages 110 maycomprise a semiconductor chip 44 and two passive devices 96 and 98. Thepatterned circuit layer 60 may include a first interconnect traceconnecting one of the metal bumps 22 of the semiconductor chip 44 to thecontact point 96 a of the passive device 96 for providing a powervoltage, a ground reference voltage or for transmitting a signal, and asecond interconnect trace connecting the other one of the metal bumps 22of the semiconductor chip 44 to the contact point 98 a of the passivedevice 98 for providing a power voltage, a ground reference voltage orfor transmitting a signal. The tin-containing balls 64 are connected tothe semiconductor chip 44 and the passive devices 96 and 98 via thepatterned circuit layer 60. When the passive device 96 is a resistor,the passive device 98 can be a capacitor. When the passive device 96 isa resistor, the passive device 98 can be an inductor. When the passivedevice 96 is a capacitor, the passive device 98 can be an inductor.

Alternatively, multiple patterned circuit layers and multiple insulatinglayers can be formed over the polymer material 52, wherein one of theinsulating layers is between the neighboring two of the patternedcircuit layers. These patterned circuit layers are connected to eachother through multiple metal vias in the insulating layers. Thetin-containing ball 64 can be formed over the topmost one of thepatterned circuit layers, and the bottommost one of the patternedcircuit layers can be connected to the metal bump 22 and a contact pointof the passive device. The following example is described for formingtwo patterned circuit layers. More than two patterned circuit layers canbe referred to the following example.

After the step of show in FIG. 9C, the steps as referred to in FIGS.6E-6W are performed in sequence. Next, referring to FIG. 9F, thesubstrate 48, the glue material 80, the polymer material 52, theinsulating layer 62 and the solder mask 76 can be cutted into aplurality of chip packages 111 using a mechanical cutting process orusing a laser cutting process. Alternatively, the glue material 80, thepolymer material 52, the insulating layer 62 and the solder mask 76 canbe cutted using a mechanical cutting process or using a laser cuttingprocess in the time when the substrate 48 is not cutted, and then thesubstrate 48 is separated from the semiconductor chips 44, the passivedevices 92 and the polymer material 52. So far, multiple chip packages111 are completed.

In these chip packages 111, the patterned circuit layer 60 may includean interconnect trace connecting one of the metal bump 22 of thesemiconductor chip 44 and the contact point 92 a of the passive device92 for providing a power voltage, a ground reference voltage or fortransmitting a signal. The interconnect trace may be connected to atin-containing ball 64 via the patterned circuit layer 74. Thetin-containing balls 64 can be connected to the integrated circuit chip44 and the passive device 92 through these patterned circuit layers 60and 74.

Alternatively, in these chip packages 111, the patterned circuit layers60 and 74 may include an interconnect trace connecting one of the metalbump 22 of the semiconductor chip 44 and the contact point 92 a of thepassive device 92 for providing a power voltage, a ground referencevoltage or for transmitting a signal. The interconnect trace may beconnected to a tin-containing ball 64 via the patterned circuit layer74. The tin-containing balls 64 can be connected to the integratedcircuit chip 44 and the passive device 92 through these patternedcircuit layers 60 and 74.

Alternatively, referring to FIG. 9G, these chip packages 111 maycomprise a semiconductor chip 44 and two passive devices 96 and 98. Thepatterned circuit layer 60 may include a first interconnect traceconnecting one of the metal bumps 22 of the semiconductor chip 44 to thecontact point 96 a of the passive device 96 for providing a powervoltage, a ground reference voltage or for transmitting a signal, and asecond interconnect trace connecting the other one of the metal bumps 22of the semiconductor chip 44 to the contact point 98 a of the passivedevice 98 for providing a power voltage, a ground reference voltage orfor transmitting a signal. The tin-containing balls 64 are connected tothe semiconductor chip 44 and the passive devices 96 and 98 via thepatterned circuit layer 60 and the patterned circuit layer 74.Alternatively, these chip packages 111 may comprise a semiconductor chip44 and two passive devices 96 and 98. The patterned circuit layers 60and 74 may include a first interconnect trace connecting one of themetal bumps 22 of the semiconductor chip 44 to the contact point 96 a ofthe passive device 96 for providing a power voltage, a ground referencevoltage or for transmitting a signal, and a second interconnect traceconnecting the other one of the metal bumps 22 of the semiconductor chip44 to the contact point 98 a of the passive device 98 for providing apower voltage, a ground reference voltage or for transmitting a signal.The tin-containing balls 64 are connected to the semiconductor chip 44and the passive devices 96 and 98 via the patterned circuit layer 60 andthe patterned circuit layer 74. When the passive device 96 is aresistor, the passive device 98 can be a capacitor. When the passivedevice 96 is a resistor, the passive device 98 can be an inductor. Whenthe passive device 96 is a capacitor, the passive device 98 can be aninductor.

Referring to FIG. 9H, multiple cavities 82 may be formed in thesubstrate 48 using a mechanical drilling process, a laser drillingprocess or an etching process. Next, a glue material 80 can be formed onbottom surfaces of the cavities 82 in the substrate 48 for adhering topassive devices 92 and on a top surface of the substrate 48, not overthe cavities 82, for adhering to the semiconductor chips 44 by a coatingprocess, a lamitation process, an immerseon process or a sprayingprocess to form multiple glue portions. Next, multiple semiconductorchips 44 are mounted onto the glue material 80 on the top surface of thesubstrate 48, not over the cavities 82, and multiple passive devices 92are mounted onto the glue material 80 in the cavities 82 by heating theglue material 80 at a temperature of between 120 and 250° C.

Referring to FIG. 9I, after these semiconductor chips 44 and thesepassive devices 92 are adhered to the substrate 48, the steps asreferred to in FIGS. 9B-9D are performed in sequence. So far, multiplechip packages 112 are completed.

In these chip packages 112, the patterned circuit layer 60 may includean interconnect trace connecting one of the metal bump 22 of thesemiconductor chip 44 and the contact point 92 a of the passive device92 for providing a power voltage, a ground reference voltage or fortransmitting a signal. A tin-containing ball 64 is connected to theother one of the metal bump 22 of the semiconductor chips 44 via thepatterned circuit layer 60, and another tin-containing ball 64 isconnected to the interconnect trace via the patterned circuit layer 60.

Alternatively, referring to FIG. 9J, these chip packages 112 maycomprise a semiconductor chip 44 and two passive devices 96 and 98. Thepatterned circuit layer 60 may include a first interconnect traceconnecting one of the metal bumps 22 of the semiconductor chip 44 to thecontact point 96 a of the passive device 96 for providing a powervoltage, a ground reference voltage or for transmitting a signal, and asecond interconnect trace connecting the other one of the metal bumps 22of the semiconductor chip 44 to the contact point 98 a of the passivedevice 98 for providing a power voltage, a ground reference voltage orfor transmitting a signal. The tin-containing balls 64 are connected tothe semiconductor chip 44 and the passive devices 96 and 98 via thepatterned circuit layer 60. When the passive device 96 is a resistor,the passive device 98 can be a capacitor. When the passive device 96 isa resistor, the passive device 98 can be an inductor. When the passivedevice 96 is a capacitor, the passive device 98 can be an inductor.

Alternatively, multiple patterned circuit layers and multiple insulatinglayers can be formed over the polymer material 52, wherein one of theinsulating layers is between the neighboring two of the patternedcircuit layers. These patterned circuit layers are connected to eachother through multiple metal vias in the insulating layers. Thetin-containing ball 64 can be formed over the topmost one of thepatterned circuit layers, and the bottommost one of the patternedcircuit layers can be connected to the metal bump 22 and a contact pointof the passive device. The following example is described for formingtwo patterned circuit layers. More than two patterned circuit layers canbe referred to the following example.

After these semiconductor chips 44 and these passive devices 92 areadhered to the substrate 48, the steps as referred to in FIGS. 6C-6W areperformed in sequence. Next, referring to FIG. 9K, the substrate 48, theglue material 80, the polymer material 52, the insulating layer 62 andthe solder mask 76 can be cutted into a plurality of chip packages 113using a mechanical cutting process or using a laser cutting process.Alternatively, the glue material 80, the polymer material 52, theinsulating layer 62 and the solder mask 76 can be cuffed using amechanical cutting process or using a laser cutting process in the timewhen the substrate 48 is not cutted, and then the substrate 48 isseparated from the semiconductor chips 44, the passive devices 92 andthe polymer material 52. So far, multiple chip packages 113 arecompleted.

In these chip packages 113, the patterned circuit layer 60 may includean interconnect trace connecting one of the metal bump 22 of thesemiconductor chip 44 and the contact point 92 a of the passive device92 for providing a power voltage, a ground reference voltage or fortransmitting a signal. The interconnect trace may be connected to atin-containing ball 64 via the patterned circuit layer 74. Thetin-containing balls 64 can be connected to the integrated circuit chip44 and the passive device 92 through these patterned circuit layers 60and 74.

Alternatively, in these chip packages 113, the patterned circuit layers60 and 74 may include an interconnect trace connecting one of the metalbump 22 of the semiconductor chip 44 and the contact point 92 a of thepassive device 92 for providing a power voltage, a ground referencevoltage or for transmitting a signal. The interconnect trace may beconnected to a tin-containing ball 64 via the patterned circuit layer74. The tin-containing balls 64 can be connected to the integratedcircuit chip 44 and the passive device 92 through these patternedcircuit layers 60 and 74.

Alternatively, referring to FIG. 9L, these chip packages 113 maycomprise a semiconductor chip 44 and two passive devices 96 and 98. Thepatterned circuit layer 60 may include a first interconnect traceconnecting one of the metal bumps 22 of the semiconductor chip 44 to thecontact point 96 a of the passive device 96 for providing a powervoltage, a ground reference voltage or for transmitting a signal, and asecond interconnect trace connecting the other one of the metal bumps 22of the semiconductor chip 44 to the contact point 98 a of the passivedevice 98 for providing a power voltage, a ground reference voltage orfor transmitting a signal. The tin-containing balls 64 are connected tothe semiconductor chip 44 and the passive devices 96 and 98 via thepatterned circuit layer 60 and the patterned circuit layer 74.Alternatively, these chip packages 113 may comprise a semiconductor chip44 and two passive devices 96 and 98. The patterned circuit layers 60and 74 may include a first interconnect trace connecting one of themetal bumps 22 of the semiconductor chip 44 to the contact point 96 a ofthe passive device 96 for providing a power voltage, a ground referencevoltage or for transmitting a signal, and a second interconnect traceconnecting the other one of the metal bumps 22 of the semiconductor chip44 to the contact point 98 a of the passive device 98 for providing apower voltage, a ground reference voltage or for transmitting a signal.The tin-containing balls 64 are connected to the semiconductor chip 44and the passive devices 96 and 98 via the patterned circuit layer 60 andthe patterned circuit layer 74. When the passive device 96 is aresistor, the passive device 98 can be a capacitor. When the passivedevice 96 is a resistor, the passive device 98 can be an inductor. Whenthe passive device 96 is a capacitor, the passive device 98 can be aninductor.

Those described above are the embodiments to exemplify the presentinvention to enable the person skilled in the art to understand, makeand use the present invention. However, it is not intended to limit thescope of the present invention. Any equivalent modification andvariation according to the spirit of the present invention is to be alsoincluded within the scope of the claims stated below.

What is claimed is:
 1. A chip package comprising: a first polymer layer; a first semiconductor chip, the first polymer layer on the first semiconductor chip, in which the first semiconductor chip comprises: a first semiconductor device, a first semiconductor substrate to support the first semiconductor device, and a first contact pad coupled to the first semiconductor device; a first conductive interconnect coupled to the first contact pad, a top surface of the first conductive interconnect substantially coplanar with a top surface of the first polymer layer to enclose the first conductive interconnect in the first polymer layer below the top surface of the first conductive interconnect; a passivation layer on a surface of the first semiconductor chip and sidewalls of the first contact pad, in which at least one intervening layer is coupled between the passivation layer and the first conductive interconnect; a second polymer layer over the first polymer layer and extending across an edge of the first semiconductor chip; and a first redistribution layer comprising a first conductive layer on the top surface of the first conductive interconnect and a second conductive layer in contact with the first conductive layer, the first redistribution layer extending across the edge of the first semiconductor chip, at least a portion of the first conductive layer in contact with the second polymer layer, and a width of the first conductive layer equal to a width of the second conductive layer.
 2. The chip package of claim 1, in which the semiconductor substrate comprises silicon.
 3. The chip package of claim 1, in which the first polymer layer comprises an epoxy molding compound.
 4. The chip package of claim 1, in which the first polymer layer has a thickness between 250 and 1000 micrometers.
 5. The chip package of claim 1, in which the first redistribution layer has a thickness between 1 and 20 micrometers.
 6. The chip package of claim 1, in which the first conductive interconnect comprises a conductive bump having a thickness between 5 and 150 micrometers.
 7. The chip package of claim 6, in which the bump comprises a copper bump.
 8. The chip package of claim 1, further comprising: a second semiconductor chip coupled to the first semiconductor chip via the first redistribution layer.
 9. The chip package of claim 8, in which the second semiconductor chip comprises a memory chip.
 10. The chip package of claim 1, further comprising a passive device electrically coupled to the first semiconductor chip.
 11. The chip package of claim 10, in which the passive device comprises a resistor, a capacitor, an inductor or a filter.
 12. The chip package of claim 1, further comprising: a package substrate; and an adhesive layer on a surface of the first semiconductor substrate and the package substrate to adhere the first semiconductor chip to the package substrate, the adhesive layer partially surrounded by the first polymer layer.
 13. The chip package of claim 1, in which the first redistribution layer comprises a plurality of redistribution layers (RDLs).
 14. The chip package of claim 13, in which the first redistribution layer has a thickness between 10 micrometers and 202 micrometers.
 15. The chip package of claim 1, in which the first redistribution layer comprises three redistribution layers (RDLs).
 16. The chip package of claim 1, in which the first semiconductor device comprises a logic device, a passive device, or an active device.
 17. The chip package of claim 1, in which the first contact pad comprises a titanium-containing layer on a copper layer having a thickness between 1 and 20 micrometers.
 18. The chip package of claim 1, in which the first conductive layer comprises a titanium-containing layer coupled to a copper layer on a surface of the first conductive interconnect and coupled to a surface of the first polymer layer.
 19. The chip package of claim 1, in which the first semiconductor substrate comprises silicon germanium (SiGe) or gallium arsenide (GaAs).
 20. The chip package of claim 1, in which the first contact pad comprises aluminum.
 21. The chip package of claim 1, in which the first conductive interconnect does not extend across the edge of the first semiconductor chip.
 22. The chip package of claim 1, in which the first polymer layer has a thickness less than 1000 micrometers.
 23. The chip package of claim 1, in which the at least one intervening layer comprises: an adhesion/barrier layer on the first conductive pad and the passivation layer; and a seed layer on the adhesion/barrier layer between the first conductive interconnect and the first contact pad. 